Quantitative depth‐dependent analysis using the inelastic scattering backgrounds from X‐ray photoelectron spectroscopy and hard X‐ray photoelectron spectroscopy
The inelastic scattering contribution to an X‐ray photoelectron spectrum (XPS) reflects the distribution of elements within the sample depth. Varying the energy of the incident photons changes the inelastic scattering contribution. We present a standardless, automated method that exploits this chang...
Gespeichert in:
| Veröffentlicht in: | Surface and interface analysis 2023-05, Vol.55 (5), p.373-382 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 382 |
|---|---|
| container_issue | 5 |
| container_start_page | 373 |
| container_title | Surface and interface analysis |
| container_volume | 55 |
| creator | Murdoch, Billy J. Le, Phuong Y. Partridge, James G. McCulloch, Dougal G. |
| description | The inelastic scattering contribution to an X‐ray photoelectron spectrum (XPS) reflects the distribution of elements within the sample depth. Varying the energy of the incident photons changes the inelastic scattering contribution. We present a standardless, automated method that exploits this change to enable compositional analysis within the XPS information depth (also known as amount of substance, AOS3λ). In this method, the photoelectron intensities observed using two or more X‐ray photon energies are normalised using correction factors. These correction factors are derived to determine the AOS3λ from the inelastic scattering signals collected from different samples. The AOS3λ are then compared with the ratio of the elastic XPS peak intensities calculated for different sample depths to find the layer thickness. The method has been applied to analyse spectra collected from thin amorphous carbon films to yield quantitative, standardless and automated XPS analysis. |
| doi_str_mv | 10.1002/sia.7206 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2794354422</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2794354422</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3276-76c64f1aa8ed66b3864b346ccb6ca567dc9da4e71966d1f5d56da4a12473018b3</originalsourceid><addsrcrecordid>eNqNkc9KxDAQxoMouK6CjxDw4qVrkqZpe1zEPwsLIip4K9Mk3c3abWuSKr35CD6FD-aTmN31Knj6ZpgfHzPzIXRKyYQSwi6cgUnKiNhDI0pyEeU5zfbRiFDOIsYZPURHzq0IIVmciRH6uu-h8caDN28aK9355ffHZ1DdKN14DA3UgzMO9840C-yXGptG1-C8kdhJ8F7bzaAE-bKwbd8ohyvbrvFzsLEw4G7Z-lbXWnrbNth128LJthuCt8JLsOof7DE6qKB2-uRXx-jp-urx8jaa393MLqfzSMYsFVEqpOAVBci0EqIMF_Iy5kLKUkhIRKpkroDrlOZCKFolKhGhB8p4GhOalfEYne18O9u-9tr5YtX2NvzAFSzNeZxwzligzneUDOs5q6uis2YNdigoKTYpFCGFYpNCQKMd-m5qPfzJFQ-z6Zb_Ae0wkSk</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2794354422</pqid></control><display><type>article</type><title>Quantitative depth‐dependent analysis using the inelastic scattering backgrounds from X‐ray photoelectron spectroscopy and hard X‐ray photoelectron spectroscopy</title><source>Access via Wiley Online Library</source><creator>Murdoch, Billy J. ; Le, Phuong Y. ; Partridge, James G. ; McCulloch, Dougal G.</creator><creatorcontrib>Murdoch, Billy J. ; Le, Phuong Y. ; Partridge, James G. ; McCulloch, Dougal G.</creatorcontrib><description>The inelastic scattering contribution to an X‐ray photoelectron spectrum (XPS) reflects the distribution of elements within the sample depth. Varying the energy of the incident photons changes the inelastic scattering contribution. We present a standardless, automated method that exploits this change to enable compositional analysis within the XPS information depth (also known as amount of substance, AOS3λ). In this method, the photoelectron intensities observed using two or more X‐ray photon energies are normalised using correction factors. These correction factors are derived to determine the AOS3λ from the inelastic scattering signals collected from different samples. The AOS3λ are then compared with the ratio of the elastic XPS peak intensities calculated for different sample depths to find the layer thickness. The method has been applied to analyse spectra collected from thin amorphous carbon films to yield quantitative, standardless and automated XPS analysis.</description><identifier>ISSN: 0142-2421</identifier><identifier>EISSN: 1096-9918</identifier><identifier>DOI: 10.1002/sia.7206</identifier><language>eng</language><publisher>Bognor Regis: Wiley Subscription Services, Inc</publisher><subject>HAXPES ; Inelastic scattering ; Photoelectrons ; Photons ; Thickness ; Thin films ; X ray photoelectron spectroscopy ; XPS</subject><ispartof>Surface and interface analysis, 2023-05, Vol.55 (5), p.373-382</ispartof><rights>2023 The Authors. published by John Wiley & Sons Ltd.</rights><rights>2023. This article is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3276-76c64f1aa8ed66b3864b346ccb6ca567dc9da4e71966d1f5d56da4a12473018b3</citedby><cites>FETCH-LOGICAL-c3276-76c64f1aa8ed66b3864b346ccb6ca567dc9da4e71966d1f5d56da4a12473018b3</cites><orcidid>0000-0002-2995-0670 ; 0000-0001-8326-6725</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fsia.7206$$EPDF$$P50$$Gwiley$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fsia.7206$$EHTML$$P50$$Gwiley$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids></links><search><creatorcontrib>Murdoch, Billy J.</creatorcontrib><creatorcontrib>Le, Phuong Y.</creatorcontrib><creatorcontrib>Partridge, James G.</creatorcontrib><creatorcontrib>McCulloch, Dougal G.</creatorcontrib><title>Quantitative depth‐dependent analysis using the inelastic scattering backgrounds from X‐ray photoelectron spectroscopy and hard X‐ray photoelectron spectroscopy</title><title>Surface and interface analysis</title><description>The inelastic scattering contribution to an X‐ray photoelectron spectrum (XPS) reflects the distribution of elements within the sample depth. Varying the energy of the incident photons changes the inelastic scattering contribution. We present a standardless, automated method that exploits this change to enable compositional analysis within the XPS information depth (also known as amount of substance, AOS3λ). In this method, the photoelectron intensities observed using two or more X‐ray photon energies are normalised using correction factors. These correction factors are derived to determine the AOS3λ from the inelastic scattering signals collected from different samples. The AOS3λ are then compared with the ratio of the elastic XPS peak intensities calculated for different sample depths to find the layer thickness. The method has been applied to analyse spectra collected from thin amorphous carbon films to yield quantitative, standardless and automated XPS analysis.</description><subject>HAXPES</subject><subject>Inelastic scattering</subject><subject>Photoelectrons</subject><subject>Photons</subject><subject>Thickness</subject><subject>Thin films</subject><subject>X ray photoelectron spectroscopy</subject><subject>XPS</subject><issn>0142-2421</issn><issn>1096-9918</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>24P</sourceid><sourceid>WIN</sourceid><recordid>eNqNkc9KxDAQxoMouK6CjxDw4qVrkqZpe1zEPwsLIip4K9Mk3c3abWuSKr35CD6FD-aTmN31Knj6ZpgfHzPzIXRKyYQSwi6cgUnKiNhDI0pyEeU5zfbRiFDOIsYZPURHzq0IIVmciRH6uu-h8caDN28aK9355ffHZ1DdKN14DA3UgzMO9840C-yXGptG1-C8kdhJ8F7bzaAE-bKwbd8ohyvbrvFzsLEw4G7Z-lbXWnrbNth128LJthuCt8JLsOof7DE6qKB2-uRXx-jp-urx8jaa393MLqfzSMYsFVEqpOAVBci0EqIMF_Iy5kLKUkhIRKpkroDrlOZCKFolKhGhB8p4GhOalfEYne18O9u-9tr5YtX2NvzAFSzNeZxwzligzneUDOs5q6uis2YNdigoKTYpFCGFYpNCQKMd-m5qPfzJFQ-z6Zb_Ae0wkSk</recordid><startdate>202305</startdate><enddate>202305</enddate><creator>Murdoch, Billy J.</creator><creator>Le, Phuong Y.</creator><creator>Partridge, James G.</creator><creator>McCulloch, Dougal G.</creator><general>Wiley Subscription Services, Inc</general><scope>24P</scope><scope>WIN</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-2995-0670</orcidid><orcidid>https://orcid.org/0000-0001-8326-6725</orcidid></search><sort><creationdate>202305</creationdate><title>Quantitative depth‐dependent analysis using the inelastic scattering backgrounds from X‐ray photoelectron spectroscopy and hard X‐ray photoelectron spectroscopy</title><author>Murdoch, Billy J. ; Le, Phuong Y. ; Partridge, James G. ; McCulloch, Dougal G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3276-76c64f1aa8ed66b3864b346ccb6ca567dc9da4e71966d1f5d56da4a12473018b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>HAXPES</topic><topic>Inelastic scattering</topic><topic>Photoelectrons</topic><topic>Photons</topic><topic>Thickness</topic><topic>Thin films</topic><topic>X ray photoelectron spectroscopy</topic><topic>XPS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Murdoch, Billy J.</creatorcontrib><creatorcontrib>Le, Phuong Y.</creatorcontrib><creatorcontrib>Partridge, James G.</creatorcontrib><creatorcontrib>McCulloch, Dougal G.</creatorcontrib><collection>Wiley Online Library (Open Access Collection)</collection><collection>Wiley Free Content</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Surface and interface analysis</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Murdoch, Billy J.</au><au>Le, Phuong Y.</au><au>Partridge, James G.</au><au>McCulloch, Dougal G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Quantitative depth‐dependent analysis using the inelastic scattering backgrounds from X‐ray photoelectron spectroscopy and hard X‐ray photoelectron spectroscopy</atitle><jtitle>Surface and interface analysis</jtitle><date>2023-05</date><risdate>2023</risdate><volume>55</volume><issue>5</issue><spage>373</spage><epage>382</epage><pages>373-382</pages><issn>0142-2421</issn><eissn>1096-9918</eissn><abstract>The inelastic scattering contribution to an X‐ray photoelectron spectrum (XPS) reflects the distribution of elements within the sample depth. Varying the energy of the incident photons changes the inelastic scattering contribution. We present a standardless, automated method that exploits this change to enable compositional analysis within the XPS information depth (also known as amount of substance, AOS3λ). In this method, the photoelectron intensities observed using two or more X‐ray photon energies are normalised using correction factors. These correction factors are derived to determine the AOS3λ from the inelastic scattering signals collected from different samples. The AOS3λ are then compared with the ratio of the elastic XPS peak intensities calculated for different sample depths to find the layer thickness. The method has been applied to analyse spectra collected from thin amorphous carbon films to yield quantitative, standardless and automated XPS analysis.</abstract><cop>Bognor Regis</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/sia.7206</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0002-2995-0670</orcidid><orcidid>https://orcid.org/0000-0001-8326-6725</orcidid><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0142-2421 |
| ispartof | Surface and interface analysis, 2023-05, Vol.55 (5), p.373-382 |
| issn | 0142-2421 1096-9918 |
| language | eng |
| recordid | cdi_proquest_journals_2794354422 |
| source | Access via Wiley Online Library |
| subjects | HAXPES Inelastic scattering Photoelectrons Photons Thickness Thin films X ray photoelectron spectroscopy XPS |
| title | Quantitative depth‐dependent analysis using the inelastic scattering backgrounds from X‐ray photoelectron spectroscopy and hard X‐ray photoelectron spectroscopy |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-18T22%3A55%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Quantitative%20depth%E2%80%90dependent%20analysis%20using%20the%20inelastic%20scattering%20backgrounds%20from%20X%E2%80%90ray%20photoelectron%20spectroscopy%20and%20hard%20X%E2%80%90ray%20photoelectron%20spectroscopy&rft.jtitle=Surface%20and%20interface%20analysis&rft.au=Murdoch,%20Billy%20J.&rft.date=2023-05&rft.volume=55&rft.issue=5&rft.spage=373&rft.epage=382&rft.pages=373-382&rft.issn=0142-2421&rft.eissn=1096-9918&rft_id=info:doi/10.1002/sia.7206&rft_dat=%3Cproquest_cross%3E2794354422%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2794354422&rft_id=info:pmid/&rfr_iscdi=true |