Ion Doping of Silicon Carbide in the Technology of High-Power Electronic Devices (Review)

Ion implantation is a key technology without alternative for doping silicon carbide SiC in the manufacturing processes of SiC devices. SiC technology has a number of distinctive features in comparison with Si-ion doping technology. This paper provides a systematic analysis of modern technical soluti...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2022-12, Vol.56 (13), p.472-486
Hauptverfasser:	Afanasev, A. V., Ilyin, V. A., Luchinin, V. V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Doping Electronic devices Ion implantation Magnetic Materials Magnetism MIS (semiconductors) Physics Physics and Astronomy Silicon Silicon carbide Technological Processes and Routes Transistors
Online-Zugang:	Volltext
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