A Compact 1.0-12.5-GHz LNA MMIC With 1.5-dB NF Based on Multiple Resistive Feedback in 0.15- \mu m GaAs pHEMT Technology
In this paper, a 2-stage compact wideband low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) with multiple resistive feedback (MRFB) is presented. From the DC point of view, the proposed MRFB functions as a self-biasing structure to bias transistors in the optimal condition, im...
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| Veröffentlicht in: | IEEE transactions on circuits and systems. I, Regular papers Regular papers, 2023-04, Vol.70 (4), p.1-13 |
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| creator | Yan, Xu Zhang, Jingyuan Luo, Haorui Gao, Si-Ping Guo, Yongxin |
| description | In this paper, a 2-stage compact wideband low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) with multiple resistive feedback (MRFB) is presented. From the DC point of view, the proposed MRFB functions as a self-biasing structure to bias transistors in the optimal condition, improving the noise figure (NF) and linearity. Meanwhile, by employing MRFB with source degeneration and input inductor, the proposed LNA achieves wideband flat gain at the AC side. In comparison with traditional topologies, a wide bandwidth of more than 11.5 GHz with low noise figure of less than 2.5 dB can be achieved. To verify the proposed LNA structure, a chip prototype is fabricated in a 0.15- \mu m GaAs E-mode pHEMT process with a compact die size of only 0.75 mm ^2 including all the testing pads. From the measurement results, the proposed LNA circuit features a 1.0 to 12.5 GHz 3-dB working bandwidth (172% fractional bandwidth), 23.6 peak gain, 1.51 dB minimum NF, 66.7 \pm 15 ps group delay, and 24.3/12.6 dBm best OIP3/OP1dB, respectively. The total DC power is around 87.5 mW from a single 2.5-V power supply. |
| doi_str_mv | 10.1109/TCSI.2023.3238361 |
| format | Article |
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From the DC point of view, the proposed MRFB functions as a self-biasing structure to bias transistors in the optimal condition, improving the noise figure (NF) and linearity. Meanwhile, by employing MRFB with source degeneration and input inductor, the proposed LNA achieves wideband flat gain at the AC side. In comparison with traditional topologies, a wide bandwidth of more than 11.5 GHz with low noise figure of less than 2.5 dB can be achieved. To verify the proposed LNA structure, a chip prototype is fabricated in a 0.15-<inline-formula> <tex-math notation="LaTeX">\mu</tex-math> </inline-formula>m GaAs E-mode pHEMT process with a compact die size of only 0.75 mm<inline-formula> <tex-math notation="LaTeX">^2</tex-math> </inline-formula> including all the testing pads. From the measurement results, the proposed LNA circuit features a 1.0 to 12.5 GHz 3-dB working bandwidth (172% fractional bandwidth), 23.6 peak gain, 1.51 dB minimum NF, 66.7<inline-formula> <tex-math notation="LaTeX">\pm</tex-math> </inline-formula>15 ps group delay, and 24.3/12.6 dBm best OIP3/OP1dB, respectively. The total DC power is around 87.5 mW from a single 2.5-V power supply.]]></description><identifier>ISSN: 1549-8328</identifier><identifier>EISSN: 1558-0806</identifier><identifier>DOI: 10.1109/TCSI.2023.3238361</identifier><identifier>CODEN: ITCSCH</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bandwidths ; Broadband ; broadband amplifier ; Degeneration ; Electric power supplies ; Feedback ; GaAs pHEMT ; Gallium arsenide ; Group delay ; Integrated circuits ; Low noise ; Low-noise amplifier (LNA) ; MMIC (circuits) ; monolithic microwave integrated circuit (MMIC) ; multiple resistive feedback (MRFB) ; self-biasing ; Topology ; Transistors</subject><ispartof>IEEE transactions on circuits and systems. I, Regular papers, 2023-04, Vol.70 (4), p.1-13</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c294t-c3eb067bd9da3ad775931aae463dc1350ea468ebb0c62004ffab0798157bbe6d3</citedby><cites>FETCH-LOGICAL-c294t-c3eb067bd9da3ad775931aae463dc1350ea468ebb0c62004ffab0798157bbe6d3</cites><orcidid>0000-0002-7905-185X ; 0000-0001-8842-5609 ; 0000-0003-1999-2735 ; 0000-0002-9355-8518 ; 0000-0001-5007-3142</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10026243$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10026243$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yan, Xu</creatorcontrib><creatorcontrib>Zhang, Jingyuan</creatorcontrib><creatorcontrib>Luo, Haorui</creatorcontrib><creatorcontrib>Gao, Si-Ping</creatorcontrib><creatorcontrib>Guo, Yongxin</creatorcontrib><title>A Compact 1.0-12.5-GHz LNA MMIC With 1.5-dB NF Based on Multiple Resistive Feedback in 0.15- \mu m GaAs pHEMT Technology</title><title>IEEE transactions on circuits and systems. I, Regular papers</title><addtitle>TCSI</addtitle><description><![CDATA[In this paper, a 2-stage compact wideband low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) with multiple resistive feedback (MRFB) is presented. From the DC point of view, the proposed MRFB functions as a self-biasing structure to bias transistors in the optimal condition, improving the noise figure (NF) and linearity. Meanwhile, by employing MRFB with source degeneration and input inductor, the proposed LNA achieves wideband flat gain at the AC side. In comparison with traditional topologies, a wide bandwidth of more than 11.5 GHz with low noise figure of less than 2.5 dB can be achieved. To verify the proposed LNA structure, a chip prototype is fabricated in a 0.15-<inline-formula> <tex-math notation="LaTeX">\mu</tex-math> </inline-formula>m GaAs E-mode pHEMT process with a compact die size of only 0.75 mm<inline-formula> <tex-math notation="LaTeX">^2</tex-math> </inline-formula> including all the testing pads. From the measurement results, the proposed LNA circuit features a 1.0 to 12.5 GHz 3-dB working bandwidth (172% fractional bandwidth), 23.6 peak gain, 1.51 dB minimum NF, 66.7<inline-formula> <tex-math notation="LaTeX">\pm</tex-math> </inline-formula>15 ps group delay, and 24.3/12.6 dBm best OIP3/OP1dB, respectively. The total DC power is around 87.5 mW from a single 2.5-V power supply.]]></description><subject>Bandwidths</subject><subject>Broadband</subject><subject>broadband amplifier</subject><subject>Degeneration</subject><subject>Electric power supplies</subject><subject>Feedback</subject><subject>GaAs pHEMT</subject><subject>Gallium arsenide</subject><subject>Group delay</subject><subject>Integrated circuits</subject><subject>Low noise</subject><subject>Low-noise amplifier (LNA)</subject><subject>MMIC (circuits)</subject><subject>monolithic microwave integrated circuit (MMIC)</subject><subject>multiple resistive feedback (MRFB)</subject><subject>self-biasing</subject><subject>Topology</subject><subject>Transistors</subject><issn>1549-8328</issn><issn>1558-0806</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkE1Lw0AQhoMoWKs_QPAw4Hnj7G42H8c29AvaClrxIoRNMrGpSROzqVh_vQn14GkG5nlnhseybjnanGPwsAmfF7ZAIW0ppC9dfmYNuFI-Qx_d8753AuZL4V9aV8bsEEWAkg-s7xGEVVnrpAVuI-PCVmw2_4HlegSr1SKE17zddiPF0jGspzDWhlKo9rA6FG1eFwRPZHLT5l8EU6I01skH5Hvo3lIM3soDlDDTIwP1fLLawIaS7b4qqvfjtXWR6cLQzV8dWi_TySacs-XjbBGOliwRgdOyRFKMrhenQaqlTj1PBZJrTY4r04RLhaQd16c4xsQViE6W6Ri9wOfKi2NyUzm07k9766b6PJBpo111aPbdyUh4gRToK-F1FD9RSVMZ01AW1U1e6uYYcYx6wVEvOOoFR3-Cu8zdKZMT0T8ehSscKX8BDL5xlw</recordid><startdate>20230401</startdate><enddate>20230401</enddate><creator>Yan, Xu</creator><creator>Zhang, Jingyuan</creator><creator>Luo, Haorui</creator><creator>Gao, Si-Ping</creator><creator>Guo, Yongxin</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-7905-185X</orcidid><orcidid>https://orcid.org/0000-0001-8842-5609</orcidid><orcidid>https://orcid.org/0000-0003-1999-2735</orcidid><orcidid>https://orcid.org/0000-0002-9355-8518</orcidid><orcidid>https://orcid.org/0000-0001-5007-3142</orcidid></search><sort><creationdate>20230401</creationdate><title>A Compact 1.0-12.5-GHz LNA MMIC With 1.5-dB NF Based on Multiple Resistive Feedback in 0.15- \mu m GaAs pHEMT Technology</title><author>Yan, Xu ; Zhang, Jingyuan ; Luo, Haorui ; Gao, Si-Ping ; Guo, Yongxin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c294t-c3eb067bd9da3ad775931aae463dc1350ea468ebb0c62004ffab0798157bbe6d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Bandwidths</topic><topic>Broadband</topic><topic>broadband amplifier</topic><topic>Degeneration</topic><topic>Electric power supplies</topic><topic>Feedback</topic><topic>GaAs pHEMT</topic><topic>Gallium arsenide</topic><topic>Group delay</topic><topic>Integrated circuits</topic><topic>Low noise</topic><topic>Low-noise amplifier (LNA)</topic><topic>MMIC (circuits)</topic><topic>monolithic microwave integrated circuit (MMIC)</topic><topic>multiple resistive feedback (MRFB)</topic><topic>self-biasing</topic><topic>Topology</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yan, Xu</creatorcontrib><creatorcontrib>Zhang, Jingyuan</creatorcontrib><creatorcontrib>Luo, Haorui</creatorcontrib><creatorcontrib>Gao, Si-Ping</creatorcontrib><creatorcontrib>Guo, Yongxin</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on circuits and systems. I, Regular papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yan, Xu</au><au>Zhang, Jingyuan</au><au>Luo, Haorui</au><au>Gao, Si-Ping</au><au>Guo, Yongxin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Compact 1.0-12.5-GHz LNA MMIC With 1.5-dB NF Based on Multiple Resistive Feedback in 0.15- \mu m GaAs pHEMT Technology</atitle><jtitle>IEEE transactions on circuits and systems. I, Regular papers</jtitle><stitle>TCSI</stitle><date>2023-04-01</date><risdate>2023</risdate><volume>70</volume><issue>4</issue><spage>1</spage><epage>13</epage><pages>1-13</pages><issn>1549-8328</issn><eissn>1558-0806</eissn><coden>ITCSCH</coden><abstract><![CDATA[In this paper, a 2-stage compact wideband low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) with multiple resistive feedback (MRFB) is presented. From the DC point of view, the proposed MRFB functions as a self-biasing structure to bias transistors in the optimal condition, improving the noise figure (NF) and linearity. Meanwhile, by employing MRFB with source degeneration and input inductor, the proposed LNA achieves wideband flat gain at the AC side. In comparison with traditional topologies, a wide bandwidth of more than 11.5 GHz with low noise figure of less than 2.5 dB can be achieved. To verify the proposed LNA structure, a chip prototype is fabricated in a 0.15-<inline-formula> <tex-math notation="LaTeX">\mu</tex-math> </inline-formula>m GaAs E-mode pHEMT process with a compact die size of only 0.75 mm<inline-formula> <tex-math notation="LaTeX">^2</tex-math> </inline-formula> including all the testing pads. From the measurement results, the proposed LNA circuit features a 1.0 to 12.5 GHz 3-dB working bandwidth (172% fractional bandwidth), 23.6 peak gain, 1.51 dB minimum NF, 66.7<inline-formula> <tex-math notation="LaTeX">\pm</tex-math> </inline-formula>15 ps group delay, and 24.3/12.6 dBm best OIP3/OP1dB, respectively. The total DC power is around 87.5 mW from a single 2.5-V power supply.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TCSI.2023.3238361</doi><tpages>13</tpages><orcidid>https://orcid.org/0000-0002-7905-185X</orcidid><orcidid>https://orcid.org/0000-0001-8842-5609</orcidid><orcidid>https://orcid.org/0000-0003-1999-2735</orcidid><orcidid>https://orcid.org/0000-0002-9355-8518</orcidid><orcidid>https://orcid.org/0000-0001-5007-3142</orcidid></addata></record> |
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| ispartof | IEEE transactions on circuits and systems. I, Regular papers, 2023-04, Vol.70 (4), p.1-13 |
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| subjects | Bandwidths Broadband broadband amplifier Degeneration Electric power supplies Feedback GaAs pHEMT Gallium arsenide Group delay Integrated circuits Low noise Low-noise amplifier (LNA) MMIC (circuits) monolithic microwave integrated circuit (MMIC) multiple resistive feedback (MRFB) self-biasing Topology Transistors |
| title | A Compact 1.0-12.5-GHz LNA MMIC With 1.5-dB NF Based on Multiple Resistive Feedback in 0.15- \mu m GaAs pHEMT Technology |
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