Effect of Precursor Gas on Growth Temperature and Electrical Conduction of Carbon Nanowalls in Microwave Plasma-Enhanced Chemical Vapor Deposition
Moderate-pressure microwave plasmas are used to prepare nitrogen-incorporated carbon nanowalls (CNWs) by chemical vapor deposition using acetylene and methane as precursor gases. The growth temperature range for acetylene is shown to be totally lower than that (>1000 °C) for methane, which is att...
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| Veröffentlicht in: | IEEE transactions on plasma science 2023-02, Vol.51 (2), p.298-302 |
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| creator | Huang, Lei Ikematsu, Hiroto Kato, Yoshimine Teii, Kungen |
| description | Moderate-pressure microwave plasmas are used to prepare nitrogen-incorporated carbon nanowalls (CNWs) by chemical vapor deposition using acetylene and methane as precursor gases. The growth temperature range for acetylene is shown to be totally lower than that (>1000 °C) for methane, which is attributed to the difference in degree of hydrogenation of radical species in the two plasmas. The structural order and cluster size of sp2 carbon phase in CNWs characterized by the Raman spectroscopy increase initially and, then, decrease with temperature in each temperature range, showing the same trend as the inverse of the sheet resistance of CNWs. The results indicate that the carrier transport in CNWs depends exclusively on the microstructure of sp2 carbon phase, despite a large difference in the growth temperature range depending on the precursor gas. |
| doi_str_mv | 10.1109/TPS.2022.3204458 |
| format | Article |
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The growth temperature range for acetylene is shown to be totally lower than that (>1000 °C) for methane, which is attributed to the difference in degree of hydrogenation of radical species in the two plasmas. The structural order and cluster size of sp2 carbon phase in CNWs characterized by the Raman spectroscopy increase initially and, then, decrease with temperature in each temperature range, showing the same trend as the inverse of the sheet resistance of CNWs. The results indicate that the carrier transport in CNWs depends exclusively on the microstructure of sp2 carbon phase, despite a large difference in the growth temperature range depending on the precursor gas.</description><identifier>ISSN: 0093-3813</identifier><identifier>EISSN: 1939-9375</identifier><identifier>DOI: 10.1109/TPS.2022.3204458</identifier><identifier>CODEN: ITPSBD</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Amorphous carbon ; Carbon ; Carrier transport ; chemical vapor deposition (CVD) ; Conduction cooling ; Electrical conduction ; electronic transport ; Methane ; microwave ; Microwave plasmas ; Plasma enhanced chemical vapor deposition ; Plasma temperature ; Plasmas ; Precursors ; Raman spectroscopy ; Substrates ; Temperature distribution ; Temperature measurement ; vertical graphene</subject><ispartof>IEEE transactions on plasma science, 2023-02, Vol.51 (2), p.298-302</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c174t-abd89d899d20c61e595c4794efdadabb6e53304b52e7f94b82e3c60f59bf7a963</cites><orcidid>0000-0001-6804-0285 ; 0000-0003-4090-5376</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9996368$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9996368$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Huang, Lei</creatorcontrib><creatorcontrib>Ikematsu, Hiroto</creatorcontrib><creatorcontrib>Kato, Yoshimine</creatorcontrib><creatorcontrib>Teii, Kungen</creatorcontrib><title>Effect of Precursor Gas on Growth Temperature and Electrical Conduction of Carbon Nanowalls in Microwave Plasma-Enhanced Chemical Vapor Deposition</title><title>IEEE transactions on plasma science</title><addtitle>TPS</addtitle><description>Moderate-pressure microwave plasmas are used to prepare nitrogen-incorporated carbon nanowalls (CNWs) by chemical vapor deposition using acetylene and methane as precursor gases. The growth temperature range for acetylene is shown to be totally lower than that (>1000 °C) for methane, which is attributed to the difference in degree of hydrogenation of radical species in the two plasmas. The structural order and cluster size of sp2 carbon phase in CNWs characterized by the Raman spectroscopy increase initially and, then, decrease with temperature in each temperature range, showing the same trend as the inverse of the sheet resistance of CNWs. The results indicate that the carrier transport in CNWs depends exclusively on the microstructure of sp2 carbon phase, despite a large difference in the growth temperature range depending on the precursor gas.</description><subject>Amorphous carbon</subject><subject>Carbon</subject><subject>Carrier transport</subject><subject>chemical vapor deposition (CVD)</subject><subject>Conduction cooling</subject><subject>Electrical conduction</subject><subject>electronic transport</subject><subject>Methane</subject><subject>microwave</subject><subject>Microwave plasmas</subject><subject>Plasma enhanced chemical vapor deposition</subject><subject>Plasma temperature</subject><subject>Plasmas</subject><subject>Precursors</subject><subject>Raman spectroscopy</subject><subject>Substrates</subject><subject>Temperature distribution</subject><subject>Temperature measurement</subject><subject>vertical graphene</subject><issn>0093-3813</issn><issn>1939-9375</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE9r20AQxZfSQty090AvCznL3X_Sao9BcdyCmxji9CpGq1ksI2uVXamhXyOfOOs6FAZmDu_9HvMIueJsyTkz33fbx6VgQiylYErl5Qey4EaazEidfyQLxozMZMnlBfkc44ExrnImFuR15RzaiXpHtwHtHKIPdA2R-oGug3-Z9nSHxxEDTHNACkNLV30yhM5CTys_tLOduiROgApCk657GPwL9H2k3UB_dTZR4A_SbQ_xCNlq2MNgsaXVHo__IL9hTJm3OPrYnVBfyCcHfcSv7_uSPN2tdtWPbPOw_lndbDLLtZoyaNrSpDGtYLbgmJvcKm0UuhZaaJoCcymZanKB2hnVlAKlLZjLTeM0mEJekuszdwz-ecY41Qc_hyFF1kJrU2gl9UnFzqr0R4wBXT2G7gjhb81ZfWq-Ts3Xp-br9-aT5dvZ0iHif7kxKbMo5RuV0IHF</recordid><startdate>20230201</startdate><enddate>20230201</enddate><creator>Huang, Lei</creator><creator>Ikematsu, Hiroto</creator><creator>Kato, Yoshimine</creator><creator>Teii, Kungen</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-6804-0285</orcidid><orcidid>https://orcid.org/0000-0003-4090-5376</orcidid></search><sort><creationdate>20230201</creationdate><title>Effect of Precursor Gas on Growth Temperature and Electrical Conduction of Carbon Nanowalls in Microwave Plasma-Enhanced Chemical Vapor Deposition</title><author>Huang, Lei ; Ikematsu, Hiroto ; Kato, Yoshimine ; Teii, Kungen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c174t-abd89d899d20c61e595c4794efdadabb6e53304b52e7f94b82e3c60f59bf7a963</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Amorphous carbon</topic><topic>Carbon</topic><topic>Carrier transport</topic><topic>chemical vapor deposition (CVD)</topic><topic>Conduction cooling</topic><topic>Electrical conduction</topic><topic>electronic transport</topic><topic>Methane</topic><topic>microwave</topic><topic>Microwave plasmas</topic><topic>Plasma enhanced chemical vapor deposition</topic><topic>Plasma temperature</topic><topic>Plasmas</topic><topic>Precursors</topic><topic>Raman spectroscopy</topic><topic>Substrates</topic><topic>Temperature distribution</topic><topic>Temperature measurement</topic><topic>vertical graphene</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Huang, Lei</creatorcontrib><creatorcontrib>Ikematsu, Hiroto</creatorcontrib><creatorcontrib>Kato, Yoshimine</creatorcontrib><creatorcontrib>Teii, Kungen</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on plasma science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Huang, Lei</au><au>Ikematsu, Hiroto</au><au>Kato, Yoshimine</au><au>Teii, Kungen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Precursor Gas on Growth Temperature and Electrical Conduction of Carbon Nanowalls in Microwave Plasma-Enhanced Chemical Vapor Deposition</atitle><jtitle>IEEE transactions on plasma science</jtitle><stitle>TPS</stitle><date>2023-02-01</date><risdate>2023</risdate><volume>51</volume><issue>2</issue><spage>298</spage><epage>302</epage><pages>298-302</pages><issn>0093-3813</issn><eissn>1939-9375</eissn><coden>ITPSBD</coden><abstract>Moderate-pressure microwave plasmas are used to prepare nitrogen-incorporated carbon nanowalls (CNWs) by chemical vapor deposition using acetylene and methane as precursor gases. The growth temperature range for acetylene is shown to be totally lower than that (>1000 °C) for methane, which is attributed to the difference in degree of hydrogenation of radical species in the two plasmas. The structural order and cluster size of sp2 carbon phase in CNWs characterized by the Raman spectroscopy increase initially and, then, decrease with temperature in each temperature range, showing the same trend as the inverse of the sheet resistance of CNWs. The results indicate that the carrier transport in CNWs depends exclusively on the microstructure of sp2 carbon phase, despite a large difference in the growth temperature range depending on the precursor gas.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TPS.2022.3204458</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-6804-0285</orcidid><orcidid>https://orcid.org/0000-0003-4090-5376</orcidid></addata></record> |
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| subjects | Amorphous carbon Carbon Carrier transport chemical vapor deposition (CVD) Conduction cooling Electrical conduction electronic transport Methane microwave Microwave plasmas Plasma enhanced chemical vapor deposition Plasma temperature Plasmas Precursors Raman spectroscopy Substrates Temperature distribution Temperature measurement vertical graphene |
| title | Effect of Precursor Gas on Growth Temperature and Electrical Conduction of Carbon Nanowalls in Microwave Plasma-Enhanced Chemical Vapor Deposition |
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