New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs

Low frequency (LF) noise is a powerful and non-destructive technique for evaluating the oxide-semiconductor interface and an effective evaluating tool in characterizing electronic device's structure and reliability. In this study, we present a systematic analysis of the striking abnormal 1/f no...

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Veröffentlicht in:	IEEE journal of the Electron Devices Society 2023, Vol.11, p.30-35
Hauptverfasser:	Zhu, Kunfeng, Zhang, Peijian, Xu, Zicheng, Wang, Tao, Yi, Xiaohui, Hong, Min, Yang, Yonghui, Zhang, Guangsheng, Liu, Jian, Wei, Jianan, Pu, Yang, Huang, Dong, Luo, Ting, Chen, Xian, Tang, Xinyue, Tan, Kaizhou, Chen, Wensuo
Format:	Artikel
Sprache:	eng
Schlagworte:	1/f noise Bipolar transistors current gain Defects Degradation Emitters Hot carrier Hot carriers Integrated circuit reliability interface defect Junction transistors LF noise Low-frequency noise Noise spectra Nondestructive testing Polysilicon Reliability analysis Reliability engineering Semiconductor devices Silicon Silicon dioxide Silicon germanides Silicon germanium Stress Structural reliability
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