New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs
Low frequency (LF) noise is a powerful and non-destructive technique for evaluating the oxide-semiconductor interface and an effective evaluating tool in characterizing electronic device's structure and reliability. In this study, we present a systematic analysis of the striking abnormal 1/f no...
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| Veröffentlicht in: | IEEE journal of the Electron Devices Society 2023, Vol.11, p.30-35 |
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| container_title | IEEE journal of the Electron Devices Society |
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| creator | Zhu, Kunfeng Zhang, Peijian Xu, Zicheng Wang, Tao Yi, Xiaohui Hong, Min Yang, Yonghui Zhang, Guangsheng Liu, Jian Wei, Jianan Pu, Yang Huang, Dong Luo, Ting Chen, Xian Tang, Xinyue Tan, Kaizhou Chen, Wensuo |
| description | Low frequency (LF) noise is a powerful and non-destructive technique for evaluating the oxide-semiconductor interface and an effective evaluating tool in characterizing electronic device's structure and reliability. In this study, we present a systematic analysis of the striking abnormal 1/f noise behavior of the hot carrier induced defects in highspeed polysilicon emitter bipolar transistors (PE-BJTs) and SiGe HBTs. Here, the comparative results before and after hot carrier degradation reveal that low frequency noise spectra are not correlated with the density and distribution of the interfacial defects, which related to Si dangling bonds reside at the SiO2/Si interface in PE-BJTs and SiGe HBTs. |
| doi_str_mv | 10.1109/JEDS.2023.3239341 |
| format | Article |
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In this study, we present a systematic analysis of the striking abnormal 1/f noise behavior of the hot carrier induced defects in highspeed polysilicon emitter bipolar transistors (PE-BJTs) and SiGe HBTs. Here, the comparative results before and after hot carrier degradation reveal that low frequency noise spectra are not correlated with the density and distribution of the interfacial defects, which related to Si dangling bonds reside at the SiO2/Si interface in PE-BJTs and SiGe HBTs.</description><identifier>ISSN: 2168-6734</identifier><identifier>EISSN: 2168-6734</identifier><identifier>DOI: 10.1109/JEDS.2023.3239341</identifier><identifier>CODEN: IJEDAC</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>1/f noise ; Bipolar transistors ; current gain ; Defects ; Degradation ; Emitters ; Hot carrier ; Hot carriers ; Integrated circuit reliability ; interface defect ; Junction transistors ; LF noise ; Low-frequency noise ; Noise spectra ; Nondestructive testing ; Polysilicon ; Reliability analysis ; Reliability engineering ; Semiconductor devices ; Silicon ; Silicon dioxide ; Silicon germanides ; Silicon germanium ; Stress ; Structural reliability</subject><ispartof>IEEE journal of the Electron Devices Society, 2023, Vol.11, p.30-35</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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| subjects | 1/f noise Bipolar transistors current gain Defects Degradation Emitters Hot carrier Hot carriers Integrated circuit reliability interface defect Junction transistors LF noise Low-frequency noise Noise spectra Nondestructive testing Polysilicon Reliability analysis Reliability engineering Semiconductor devices Silicon Silicon dioxide Silicon germanides Silicon germanium Stress Structural reliability |
| title | New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs |
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