The electrical response of the Au/Mn2Mo6S8/p-Si diode under different physical stimuli

[Display omitted] •Mn2Mo6S8 material was synthesized using solid state synthesis method.•Mn2Mo6S8 material was used as interface between p-Si and Au metal contact.•The electrical characterization of the Au/Mn2Mo6S8/p-Si photodiodes have been examined in the temperature range 100–340 K based on I–V data. Mn2Mo6S8 material was synthesized by solid state synthesis method and coated on p-Si by thermal evaporation method to produce Au/Mn2Mo6S8/p-Si photodiode. Morphological characterization was performed by taking XRD and EDX analyzes and SEM images, and the crystal structure of the material was seen. Electrical characterization was performed by various methods (TE, Cheung and Norde functions) by taking temperature-dependent I-V measurements between 100 and 340 K under dark condition. The I-V measurements were made in various illuminations at room temperature and the photo response of the device was examined. The devices capacitor properties were calculated by making C-V measurements at various frequencies. The results showed that the I-V characteristic of the Au/Mn2Mo6S8/p-Si device were strongly dependent on temperature and the C-V characteristic was strongly frequency dependent. The results revealed that it is a suitable candidate material for optoelectronic devices.