A Low Power 100-Gb/s PAM-4 Driver with Linear Distortion Compensation in 65-nm CMOS
This paper proposes a low-power 100Gb/s four-level pulse amplitude modulation driver (PAM-4 Driver) based on linear distortion compensation structure for thin-film Lithium Niobate (LiNbO3) modulators, which manages to achieve high linearity in the output. The inductive peaking technology and open dr...
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| Veröffentlicht in: | IEICE Transactions on Electronics 2023/01/01, Vol.E106.C(1), pp.7-13 |
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| container_title | IEICE Transactions on Electronics |
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| creator | MENG, Xiangyu WEI, Kangfeng YU, Zhiyi CAI, Xinlun |
| description | This paper proposes a low-power 100Gb/s four-level pulse amplitude modulation driver (PAM-4 Driver) based on linear distortion compensation structure for thin-film Lithium Niobate (LiNbO3) modulators, which manages to achieve high linearity in the output. The inductive peaking technology and open drain structure enable the overall circuit to achieve a 31-GHz bandwidth. With an area of 0.292 mm2, the proposed PAM-4 driver chip is designed in a 65-nm process to achieve power consumption of 37.7 mW. Post-layout simulation results show that the power efficiency is 0.37 mW/Gb/s, RLM is more than 96%, and the FOM value is 8.84. |
| doi_str_mv | 10.1587/transele.2022ECP5010 |
| format | Article |
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The inductive peaking technology and open drain structure enable the overall circuit to achieve a 31-GHz bandwidth. With an area of 0.292 mm2, the proposed PAM-4 driver chip is designed in a 65-nm process to achieve power consumption of 37.7 mW. Post-layout simulation results show that the power efficiency is 0.37 mW/Gb/s, RLM is more than 96%, and the FOM value is 8.84.</description><identifier>ISSN: 0916-8524</identifier><identifier>EISSN: 1745-1353</identifier><identifier>DOI: 10.1587/transele.2022ECP5010</identifier><language>eng</language><publisher>Tokyo: The Institute of Electronics, Information and Communication Engineers</publisher><subject>Circuits ; CMOS ; Compensation ; Distortion ; driver ; linear distortion compensation ; Linearity ; Lithium niobates ; low power ; Modulators ; PAM-4 ; Power consumption ; Power efficiency ; Pulse amplitude modulation ; Thin films ; wideband</subject><ispartof>IEICE Transactions on Electronics, 2023/01/01, Vol.E106.C(1), pp.7-13</ispartof><rights>2023 The Institute of Electronics, Information and Communication Engineers</rights><rights>Copyright Japan Science and Technology Agency 2023</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c369t-920bfce569ebcb6dda10d7d65fea33dad03ef9f26bf8100edff87f1dbdb26a2a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,1877,27901,27902</link.rule.ids></links><search><creatorcontrib>MENG, Xiangyu</creatorcontrib><creatorcontrib>WEI, Kangfeng</creatorcontrib><creatorcontrib>YU, Zhiyi</creatorcontrib><creatorcontrib>CAI, Xinlun</creatorcontrib><title>A Low Power 100-Gb/s PAM-4 Driver with Linear Distortion Compensation in 65-nm CMOS</title><title>IEICE Transactions on Electronics</title><addtitle>IEICE Trans. Electron.</addtitle><description>This paper proposes a low-power 100Gb/s four-level pulse amplitude modulation driver (PAM-4 Driver) based on linear distortion compensation structure for thin-film Lithium Niobate (LiNbO3) modulators, which manages to achieve high linearity in the output. The inductive peaking technology and open drain structure enable the overall circuit to achieve a 31-GHz bandwidth. With an area of 0.292 mm2, the proposed PAM-4 driver chip is designed in a 65-nm process to achieve power consumption of 37.7 mW. Post-layout simulation results show that the power efficiency is 0.37 mW/Gb/s, RLM is more than 96%, and the FOM value is 8.84.</description><subject>Circuits</subject><subject>CMOS</subject><subject>Compensation</subject><subject>Distortion</subject><subject>driver</subject><subject>linear distortion compensation</subject><subject>Linearity</subject><subject>Lithium niobates</subject><subject>low power</subject><subject>Modulators</subject><subject>PAM-4</subject><subject>Power consumption</subject><subject>Power efficiency</subject><subject>Pulse amplitude modulation</subject><subject>Thin films</subject><subject>wideband</subject><issn>0916-8524</issn><issn>1745-1353</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNpNkFtPwjAYhhujiYj-Ay-aeF3pYe22SzIQTUYgotdNt7YyAi22Q-K_d4oQrr5Dnvc7vADcE_xIeJYO2qBcNGvzSDGl42LOMcEXoEfShCPCOLsEPZwTgTJOk2twE-MKY5JRwnpgMYSl38O535sACcZoUg0inA-nKIGj0Hx13X3TLmHZOKMCHDWx9aFtvIOF32yNi-qvaBwUHLkNLKazxS24smodzd1_7IP3p_Fb8YzK2eSlGJaoZiJvUU5xZWvDRW6quhJaK4J1qgW3RjGmlcbM2NxSUdmsu8xoa7PUEl3pigpFFeuDh8PcbfCfOxNbufK74LqVkqapYAknGeuo5EDVwccYjJXb0GxU-JYEy1_75NE-eWZfJ3s9yFaxVR_mJFLd93XHnkRjgoUsJDkmZ0NOcL1UQRrHfgCS54ES</recordid><startdate>20230101</startdate><enddate>20230101</enddate><creator>MENG, Xiangyu</creator><creator>WEI, Kangfeng</creator><creator>YU, Zhiyi</creator><creator>CAI, Xinlun</creator><general>The Institute of Electronics, Information and Communication Engineers</general><general>Japan Science and Technology Agency</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20230101</creationdate><title>A Low Power 100-Gb/s PAM-4 Driver with Linear Distortion Compensation in 65-nm CMOS</title><author>MENG, Xiangyu ; WEI, Kangfeng ; YU, Zhiyi ; CAI, Xinlun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c369t-920bfce569ebcb6dda10d7d65fea33dad03ef9f26bf8100edff87f1dbdb26a2a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Circuits</topic><topic>CMOS</topic><topic>Compensation</topic><topic>Distortion</topic><topic>driver</topic><topic>linear distortion compensation</topic><topic>Linearity</topic><topic>Lithium niobates</topic><topic>low power</topic><topic>Modulators</topic><topic>PAM-4</topic><topic>Power consumption</topic><topic>Power efficiency</topic><topic>Pulse amplitude modulation</topic><topic>Thin films</topic><topic>wideband</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>MENG, Xiangyu</creatorcontrib><creatorcontrib>WEI, Kangfeng</creatorcontrib><creatorcontrib>YU, Zhiyi</creatorcontrib><creatorcontrib>CAI, Xinlun</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEICE Transactions on Electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>MENG, Xiangyu</au><au>WEI, Kangfeng</au><au>YU, Zhiyi</au><au>CAI, Xinlun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Low Power 100-Gb/s PAM-4 Driver with Linear Distortion Compensation in 65-nm CMOS</atitle><jtitle>IEICE Transactions on Electronics</jtitle><addtitle>IEICE Trans. Electron.</addtitle><date>2023-01-01</date><risdate>2023</risdate><volume>E106.C</volume><issue>1</issue><spage>7</spage><epage>13</epage><pages>7-13</pages><artnum>2022ECP5010</artnum><issn>0916-8524</issn><eissn>1745-1353</eissn><abstract>This paper proposes a low-power 100Gb/s four-level pulse amplitude modulation driver (PAM-4 Driver) based on linear distortion compensation structure for thin-film Lithium Niobate (LiNbO3) modulators, which manages to achieve high linearity in the output. The inductive peaking technology and open drain structure enable the overall circuit to achieve a 31-GHz bandwidth. With an area of 0.292 mm2, the proposed PAM-4 driver chip is designed in a 65-nm process to achieve power consumption of 37.7 mW. 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| language | eng |
| recordid | cdi_proquest_journals_2776345183 |
| source | J-STAGE (Japan Science & Technology Information Aggregator, Electronic) Freely Available Titles - Japanese |
| subjects | Circuits CMOS Compensation Distortion driver linear distortion compensation Linearity Lithium niobates low power Modulators PAM-4 Power consumption Power efficiency Pulse amplitude modulation Thin films wideband |
| title | A Low Power 100-Gb/s PAM-4 Driver with Linear Distortion Compensation in 65-nm CMOS |
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