Simulation of a ring oscillator operation during γ-ray irradiation using the TID response model of MOSFETs and its experimental verification

The response of N-type MOSFET characteristics to TID (Total Ionizing Dose) effects caused by γ -ray irradiation was modeled as a sum of two exponential functions which expresses the charge accumulation of the oxide traps and the interface traps respectively. This model was applied to the circuit sim...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2023-04, Vol.62 (SC), p.SC1060
Hauptverfasser:	Kimura, Arisa, Kuroki, Kaito, Yoshida, Ryoichiro, Hirakawa, Kenji, Iwase, Masayuki, Ogasawara, Munehiro, Yoda, Takashi, Ishihara, Noboru, Ito, Hiroyuki
Format:	Artikel
Sprache:	eng
Schlagworte:	circuit design Circuits Exponential functions Frequency variation Irradiation MOSFETs Oscillators radiation hardness integrated circuit ring oscillator Simulation total ionizing dose (TID) effect trapped charge
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