Effect of a Travelling Magnetic Field on the Parameters of Tellurium-Doped Gallium Arsenide Single Crystals Grown by the Czochralski Method

The effect of a traveling magnetic field on the parameters of Te-doped GaAs single crystals in the carrier density range of 5 × 10 17 –2 × 10 18  cm ‒3 has been studied. A traveling magnetic field was induced in a melt by a graphite inductor located in the setup chamber around the main heater. It is...

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Veröffentlicht in:	Crystallography reports 2022-12, Vol.67 (7), p.1099-1104
Hauptverfasser:	Yugova, T. G., Chuprakov, V. A., Sanzharovsky, N. A., Yugov, A. A., Martynov, I. D., Knyazev, S. N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier density Crystal dislocations Crystal growth Crystallography and Scattering Methods Czochralski method Dislocation density Gallium arsenide Magnetic fields Parameters Physics Physics and Astronomy Real Structure of Crystals Single crystals Striations Tellurium
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