In-situ scanning transmission electron microscopy study of Al-amorphous SiO2 layer-SiC interface

Here, we present a comprehensive study on atomic-scale in-situ biasing/heating scanning transmission electron microscopy ((S)TEM) of Al-amorphous SiO 2 –SiC interface. The investigation includes electrical, chemical, and structural analysis of the interface at different temperatures (25–600 °C). The...

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Veröffentlicht in:	Journal of materials science 2023-02, Vol.58 (6), p.2456-2468
Hauptverfasser:	Adabifiroozjaei, Esmaeil, Rastkerdar, Ebad, Nemoto, Yoshihiro, Nakayama, Yoshiko, Nishimiya, Yuki, Fronzi, Marco, Yao, Yin, Nguyen, Minh Triet, Molina-Luna, Leopoldo, Suzuki, Tohru S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum carbide Aluminum oxide bias Ceramics Characterization and Evaluation of Materials Chemistry and Materials Science Classical Mechanics Composite materials Crystallography and Scattering Methods Equilibrium exhibitions Experiments heat transfer Interdiffusion Interfaces Materials Science Metals Polymer Sciences Reaction mechanisms Scanning electron microscopy Scanning transmission electron microscopy Semiconductors Silicon dioxide Solid Mechanics Structural analysis temperature Transmission electron microscopy
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