Fourfold magnetic anisotropy induced in CoFeB/IrMn bilayers by interfacial exchange coupling

Exchange bias (EB) occurring in ferromagnetic (FM)/antiferromagnetic (AFM) bilayers conventionally can lead to a unidirectional magnetic anisotropy ( K eb ) as well as an accompanied uniaxial magnetic anisotropy ( K u ). We observed an additional fourfold magnetic anisotropy ( K 4 ) induced by inter...

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Veröffentlicht in:New journal of physics 2023-02, Vol.25 (2), p.23005
Hauptverfasser: Feng, Xinwei, Meng, Jing, Zhu, Xiaoyan, Xue, Kelei, Xie, Yali, Jiang, Dongmei, Xu, Yang, Shang, Tian, Hu, Yong, Zhan, Qingfeng
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container_issue 2
container_start_page 23005
container_title New journal of physics
container_volume 25
creator Feng, Xinwei
Meng, Jing
Zhu, Xiaoyan
Xue, Kelei
Xie, Yali
Jiang, Dongmei
Xu, Yang
Shang, Tian
Hu, Yong
Zhan, Qingfeng
description Exchange bias (EB) occurring in ferromagnetic (FM)/antiferromagnetic (AFM) bilayers conventionally can lead to a unidirectional magnetic anisotropy ( K eb ) as well as an accompanied uniaxial magnetic anisotropy ( K u ). We observed an additional fourfold magnetic anisotropy ( K 4 ) induced by interfacial exchange coupling in amorphous CoFeB/epitaxial IrMn bilayers with an EB. Because of the combined effect of the three kinds of magnetic anisotropies, one- and two-step magnetic switching processes were observed at different magnetic field orientations, which usually appear in single-crystal FM layer with an intrinsic magnetocrystalline anisotropy but not in amorphous FM layer. The angular dependent magnetic switching fields can be nicely fitted by a phenomenological model based on domain wall nucleation and propagation with the in-plane K 4 along . The ferromagnetic resonance measurements indicate that the specific strength of K 4 for EB along [100] is larger than that for EB along [110]. The induced K 4 can be understood by considering two types of AFM domains caused by both monatomic steps and defects and their induced net uncompensated spins along the in-plane axes. The different dependence of K 4 on the EB direction are because of the different effects of growth magnetic field on the presence of AFM domains.
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Phys</addtitle><date>2023-02-01</date><risdate>2023</risdate><volume>25</volume><issue>2</issue><spage>23005</spage><pages>23005-</pages><issn>1367-2630</issn><eissn>1367-2630</eissn><coden>NJOPFM</coden><abstract>Exchange bias (EB) occurring in ferromagnetic (FM)/antiferromagnetic (AFM) bilayers conventionally can lead to a unidirectional magnetic anisotropy ( K eb ) as well as an accompanied uniaxial magnetic anisotropy ( K u ). We observed an additional fourfold magnetic anisotropy ( K 4 ) induced by interfacial exchange coupling in amorphous CoFeB/epitaxial IrMn bilayers with an EB. Because of the combined effect of the three kinds of magnetic anisotropies, one- and two-step magnetic switching processes were observed at different magnetic field orientations, which usually appear in single-crystal FM layer with an intrinsic magnetocrystalline anisotropy but not in amorphous FM layer. 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subjects Anisotropy
Antiferromagnetism
CoFeB/IrMn bilayer
Coupling
Crystal defects
Domain walls
Exchanging
Ferromagnetic resonance
Ferromagnetism
four-fold magnetic anisotropy
interfacial exchange coupling
Magnetic anisotropy
Magnetic domains
Magnetic fields
Magnetic switching
Magnetism
Nucleation
Physics
Single crystals
title Fourfold magnetic anisotropy induced in CoFeB/IrMn bilayers by interfacial exchange coupling
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