Epitaxial growth of a β-Ga2O3 (−201)-oriented thin film on a threefold symmetrical SrTiO3 (111) substrate for heterogeneous integration

Epitaxial growth of a wide bandgap semiconductor β-Ga2O3 thin film with high crystal quality plays a decisive role in constructing optical and electronic devices. However, except for the native substrate, the scarcity of appropriate non-native substrates or the poor crystallization of the deposit in...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2023-01, Vol.133 (4)
Hauptverfasser: Lu, Chao, Gao, Lei, Meng, Fanqi, Zhang, Qinghua, Yang, Lihong, Liu, Zeng, Zhu, Mingtong, Chen, Xiaokun, Lyu, Xiangyu, Wang, Yuqian, Liu, Jin, Ji, Ailing, Li, Peigang, Gu, Lin, Cao, Zexian, Lu, Nianpeng
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!