Epitaxial growth of a β-Ga2O3 (−201)-oriented thin film on a threefold symmetrical SrTiO3 (111) substrate for heterogeneous integration
Epitaxial growth of a wide bandgap semiconductor β-Ga2O3 thin film with high crystal quality plays a decisive role in constructing optical and electronic devices. However, except for the native substrate, the scarcity of appropriate non-native substrates or the poor crystallization of the deposit in...
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Veröffentlicht in: | Journal of applied physics 2023-01, Vol.133 (4) |
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Hauptverfasser: | , , , , , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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