Behavior of Al Impurity in ZnO Films: Influence of Al‐Level Doping on Structure, X‐Ray Photoelectron Spectroscopy and Transport Properties

Transparent and conductive ZnO:Al thin films have been deposited by a reactive magnetron sputtering using the layer‐by‐layer growth method. The grown Al‐doped ZnO films of about 100 nm thickness on Si and glass substrates have been investigated with respect to the crystalline phase by X‐ray diffract...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2023-01, Vol.220 (2), p.n/a
Hauptverfasser:	Ievtushenko, Arsenii, Baibara, Oleksii, Dranchuk, Mykola, Khyzhun, Oleg, Karpyna, Vitalii, Bykov, Oleksandr, Lytvyn, Oksana, Tkach, Vasyl, Baturin, Volodymyr, Karpenko, Oleksandr
Format:	Artikel
Sprache:	eng
Schlagworte:	AFM Al-doped ZnO Aluminum Chemical bonds Crystal defects Electroactivity Electronic structure Glass substrates Hall measurements Impurities Magnetron sputtering Photoelectron spectroscopy Photoelectrons Silicon substrates Spectra Spectrum analysis Temperature dependence Thin films Transport properties XPS XRD Zinc oxide
Online-Zugang:	Volltext
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