Design and Simulation of a Highly Sensitive Charge Detector With Nondestructive Readout Mode for Fully Depleted Thick CCDs

Several applications with charge-coupled devices (CCDs) and Skipper-CCDs can be significantly improved with an enhancement in pixel readout speed. In this work, we present the design and TCAD modeling of a highly sensitive double-gate MOSFET for charge amplification in CCD detectors. The design step...

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Veröffentlicht in:	IEEE transactions on electron devices 2023-02, Vol.70 (2), p.563-569
Hauptverfasser:	Sofo-Haro, Miguel, Donlon, Kevan, Burke, Barry, Estrada, Juan, Fahim, Farah, Leitz, Chris
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge coupled devices Charge-coupled device (CCD) DEPFET Depletion Electric potential Implants Logic gates NDR Noise levels Noise prediction Noise reduction single electron sensitive readout (SiSeRO) single-electron single-photon Skipper-CCD sub-electron noise Substrates Transistors Voltage
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