Tuning of charge carriers in Bi2Te3 thin films via swift heavy ion irradiation

The irradiation-induced effects of Ni 7+ ion irradiation on the structural and electrical properties of e-beam evaporation synthesized Bi 2 Te 3 thin films have been examined. X-ray Diffraction (XRD) results revealed that the films possessed a polycrystalline rhombohedral (R-3 m) crystal structure....

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2023, Vol.34 (3), p.175, Article 175
Hauptverfasser:	Yadav, Jyoti, Anoop, M. D., Yadav, Nisha, Rao, N. Srinivasa, Singh, Fouran, Ichikawa, Takayuki, Jain, Ankur, Awasthi, Kamlendra, Singh, Rini, Kumar, Manoj
Format:	Artikel
Sprache:	eng
Schlagworte:	Bismuth tellurides Characterization and Evaluation of Materials Chemistry and Materials Science Coefficient of variation Crystal lattices Crystal structure Crystallites Current carriers Electrical properties Electrical resistivity Electron beams Fluence Hall effect Heavy ions Ion irradiation Lattice parameters Lattice strain Lattice vibration Low temperature Materials Science Optical and Electronic Materials Photoelectrons Raman spectra Spectrum analysis Stoichiometry Surface roughness Thin films Unit cell X ray photoelectron spectroscopy
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