Tuning of charge carriers in Bi2Te3 thin films via swift heavy ion irradiation
The irradiation-induced effects of Ni 7+ ion irradiation on the structural and electrical properties of e-beam evaporation synthesized Bi 2 Te 3 thin films have been examined. X-ray Diffraction (XRD) results revealed that the films possessed a polycrystalline rhombohedral (R-3 m) crystal structure....
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2023, Vol.34 (3), p.175, Article 175 |
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| creator | Yadav, Jyoti Anoop, M. D. Yadav, Nisha Rao, N. Srinivasa Singh, Fouran Ichikawa, Takayuki Jain, Ankur Awasthi, Kamlendra Singh, Rini Kumar, Manoj |
| description | The irradiation-induced effects of Ni
7+
ion irradiation on the structural and electrical properties of e-beam evaporation synthesized Bi
2
Te
3
thin films have been examined. X-ray Diffraction (XRD) results revealed that the films possessed a polycrystalline rhombohedral (R-3 m) crystal structure. No appreciable change was observed in lattice parameters
a = b
while
c
varied non-monotonically indicating an anisotropic variation of the unit cell under different ion fluences. X-ray peak profile analysis indicated a slight reduction in average crystallite size and an increase in lattice strain due to irradiation. Raman spectra of the films demonstrated the effect of irradiation on
A
1
u
1
modes evolved from c-axis vibrations with ion fluence. The observed decrease in surface roughness through Atomic Force Microscopy (AFM) images up to 3 × 10
12
ions/cm
2
might be due to the formation of nanocrystallites with small sizes on the surface. The composition of the as-prepared thin films was found to be near stoichiometry of Bi
2
Te
3
as revealed by X-ray Photoelectron Spectroscopy (XPS) analysis. The resistivity of films gets increased up to 3 × 10
12
ions/cm
2
as evident from the low-temperature transport measurements. The variation correlation of electrical resistivity with the Hall coefficient is examined as a function of ion fluence. The irradiation-induced crossover behavior is resulted in films with ion fluence from the
n
to
p
-type carriers. Interestingly, the bulk charge carriers are compensated with tunning of the Fermi level in ion-irradiated thin films. |
| doi_str_mv | 10.1007/s10854-022-09478-x |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2767356028</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2767356028</sourcerecordid><originalsourceid>FETCH-LOGICAL-c270t-2d74b1526a5c0e7e2f0ff7fcc1bdcd77fc58b3b78f58bdebdca8c3ea9432f74b3</originalsourceid><addsrcrecordid>eNp9kE9LAzEUxIMoWKtfwFPAc_Ql2WzSoxb_QdFLBW8hm03alHa3Jru1_fZGV_DmaYbH_ObBIHRJ4ZoCyJtEQYmCAGMEJoVUZH-ERlRITgrF3o_RCCZCkkIwdorOUloBQFlwNUIv874JzQK3HtuliQuHrYkxuJhwaPBdYHPHcbfM3of1JuFdMDh9Bt_hpTO7Aw5tg0OMpg6my_4cnXizTu7iV8fo7eF-Pn0is9fH5-ntjFgmoSOslkVFBSuNsOCkYx68l95aWtW2ltkJVfFKKp-1dvlolOXOTArOfEb5GF0NvdvYfvQudXrV9rHJLzWTpeSiBKZyig0pG9uUovN6G8PGxIOmoL9308NuOu-mf3bT-wzxAUo53Cxc_Kv-h_oC28pyGA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2767356028</pqid></control><display><type>article</type><title>Tuning of charge carriers in Bi2Te3 thin films via swift heavy ion irradiation</title><source>SpringerLink Journals - AutoHoldings</source><creator>Yadav, Jyoti ; Anoop, M. D. ; Yadav, Nisha ; Rao, N. Srinivasa ; Singh, Fouran ; Ichikawa, Takayuki ; Jain, Ankur ; Awasthi, Kamlendra ; Singh, Rini ; Kumar, Manoj</creator><creatorcontrib>Yadav, Jyoti ; Anoop, M. D. ; Yadav, Nisha ; Rao, N. Srinivasa ; Singh, Fouran ; Ichikawa, Takayuki ; Jain, Ankur ; Awasthi, Kamlendra ; Singh, Rini ; Kumar, Manoj</creatorcontrib><description>The irradiation-induced effects of Ni
7+
ion irradiation on the structural and electrical properties of e-beam evaporation synthesized Bi
2
Te
3
thin films have been examined. X-ray Diffraction (XRD) results revealed that the films possessed a polycrystalline rhombohedral (R-3 m) crystal structure. No appreciable change was observed in lattice parameters
a = b
while
c
varied non-monotonically indicating an anisotropic variation of the unit cell under different ion fluences. X-ray peak profile analysis indicated a slight reduction in average crystallite size and an increase in lattice strain due to irradiation. Raman spectra of the films demonstrated the effect of irradiation on
A
1
u
1
modes evolved from c-axis vibrations with ion fluence. The observed decrease in surface roughness through Atomic Force Microscopy (AFM) images up to 3 × 10
12
ions/cm
2
might be due to the formation of nanocrystallites with small sizes on the surface. The composition of the as-prepared thin films was found to be near stoichiometry of Bi
2
Te
3
as revealed by X-ray Photoelectron Spectroscopy (XPS) analysis. The resistivity of films gets increased up to 3 × 10
12
ions/cm
2
as evident from the low-temperature transport measurements. The variation correlation of electrical resistivity with the Hall coefficient is examined as a function of ion fluence. The irradiation-induced crossover behavior is resulted in films with ion fluence from the
n
to
p
-type carriers. Interestingly, the bulk charge carriers are compensated with tunning of the Fermi level in ion-irradiated thin films.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-022-09478-x</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Bismuth tellurides ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Coefficient of variation ; Crystal lattices ; Crystal structure ; Crystallites ; Current carriers ; Electrical properties ; Electrical resistivity ; Electron beams ; Fluence ; Hall effect ; Heavy ions ; Ion irradiation ; Lattice parameters ; Lattice strain ; Lattice vibration ; Low temperature ; Materials Science ; Optical and Electronic Materials ; Photoelectrons ; Raman spectra ; Spectrum analysis ; Stoichiometry ; Surface roughness ; Thin films ; Unit cell ; X ray photoelectron spectroscopy</subject><ispartof>Journal of materials science. Materials in electronics, 2023, Vol.34 (3), p.175, Article 175</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c270t-2d74b1526a5c0e7e2f0ff7fcc1bdcd77fc58b3b78f58bdebdca8c3ea9432f74b3</cites><orcidid>0000-0001-5434-6101</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-022-09478-x$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-022-09478-x$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Yadav, Jyoti</creatorcontrib><creatorcontrib>Anoop, M. D.</creatorcontrib><creatorcontrib>Yadav, Nisha</creatorcontrib><creatorcontrib>Rao, N. Srinivasa</creatorcontrib><creatorcontrib>Singh, Fouran</creatorcontrib><creatorcontrib>Ichikawa, Takayuki</creatorcontrib><creatorcontrib>Jain, Ankur</creatorcontrib><creatorcontrib>Awasthi, Kamlendra</creatorcontrib><creatorcontrib>Singh, Rini</creatorcontrib><creatorcontrib>Kumar, Manoj</creatorcontrib><title>Tuning of charge carriers in Bi2Te3 thin films via swift heavy ion irradiation</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>The irradiation-induced effects of Ni
7+
ion irradiation on the structural and electrical properties of e-beam evaporation synthesized Bi
2
Te
3
thin films have been examined. X-ray Diffraction (XRD) results revealed that the films possessed a polycrystalline rhombohedral (R-3 m) crystal structure. No appreciable change was observed in lattice parameters
a = b
while
c
varied non-monotonically indicating an anisotropic variation of the unit cell under different ion fluences. X-ray peak profile analysis indicated a slight reduction in average crystallite size and an increase in lattice strain due to irradiation. Raman spectra of the films demonstrated the effect of irradiation on
A
1
u
1
modes evolved from c-axis vibrations with ion fluence. The observed decrease in surface roughness through Atomic Force Microscopy (AFM) images up to 3 × 10
12
ions/cm
2
might be due to the formation of nanocrystallites with small sizes on the surface. The composition of the as-prepared thin films was found to be near stoichiometry of Bi
2
Te
3
as revealed by X-ray Photoelectron Spectroscopy (XPS) analysis. The resistivity of films gets increased up to 3 × 10
12
ions/cm
2
as evident from the low-temperature transport measurements. The variation correlation of electrical resistivity with the Hall coefficient is examined as a function of ion fluence. The irradiation-induced crossover behavior is resulted in films with ion fluence from the
n
to
p
-type carriers. Interestingly, the bulk charge carriers are compensated with tunning of the Fermi level in ion-irradiated thin films.</description><subject>Bismuth tellurides</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Coefficient of variation</subject><subject>Crystal lattices</subject><subject>Crystal structure</subject><subject>Crystallites</subject><subject>Current carriers</subject><subject>Electrical properties</subject><subject>Electrical resistivity</subject><subject>Electron beams</subject><subject>Fluence</subject><subject>Hall effect</subject><subject>Heavy ions</subject><subject>Ion irradiation</subject><subject>Lattice parameters</subject><subject>Lattice strain</subject><subject>Lattice vibration</subject><subject>Low temperature</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Photoelectrons</subject><subject>Raman spectra</subject><subject>Spectrum analysis</subject><subject>Stoichiometry</subject><subject>Surface roughness</subject><subject>Thin films</subject><subject>Unit cell</subject><subject>X ray photoelectron spectroscopy</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp9kE9LAzEUxIMoWKtfwFPAc_Ql2WzSoxb_QdFLBW8hm03alHa3Jru1_fZGV_DmaYbH_ObBIHRJ4ZoCyJtEQYmCAGMEJoVUZH-ERlRITgrF3o_RCCZCkkIwdorOUloBQFlwNUIv874JzQK3HtuliQuHrYkxuJhwaPBdYHPHcbfM3of1JuFdMDh9Bt_hpTO7Aw5tg0OMpg6my_4cnXizTu7iV8fo7eF-Pn0is9fH5-ntjFgmoSOslkVFBSuNsOCkYx68l95aWtW2ltkJVfFKKp-1dvlolOXOTArOfEb5GF0NvdvYfvQudXrV9rHJLzWTpeSiBKZyig0pG9uUovN6G8PGxIOmoL9308NuOu-mf3bT-wzxAUo53Cxc_Kv-h_oC28pyGA</recordid><startdate>2023</startdate><enddate>2023</enddate><creator>Yadav, Jyoti</creator><creator>Anoop, M. D.</creator><creator>Yadav, Nisha</creator><creator>Rao, N. Srinivasa</creator><creator>Singh, Fouran</creator><creator>Ichikawa, Takayuki</creator><creator>Jain, Ankur</creator><creator>Awasthi, Kamlendra</creator><creator>Singh, Rini</creator><creator>Kumar, Manoj</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><orcidid>https://orcid.org/0000-0001-5434-6101</orcidid></search><sort><creationdate>2023</creationdate><title>Tuning of charge carriers in Bi2Te3 thin films via swift heavy ion irradiation</title><author>Yadav, Jyoti ; Anoop, M. D. ; Yadav, Nisha ; Rao, N. Srinivasa ; Singh, Fouran ; Ichikawa, Takayuki ; Jain, Ankur ; Awasthi, Kamlendra ; Singh, Rini ; Kumar, Manoj</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c270t-2d74b1526a5c0e7e2f0ff7fcc1bdcd77fc58b3b78f58bdebdca8c3ea9432f74b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Bismuth tellurides</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Coefficient of variation</topic><topic>Crystal lattices</topic><topic>Crystal structure</topic><topic>Crystallites</topic><topic>Current carriers</topic><topic>Electrical properties</topic><topic>Electrical resistivity</topic><topic>Electron beams</topic><topic>Fluence</topic><topic>Hall effect</topic><topic>Heavy ions</topic><topic>Ion irradiation</topic><topic>Lattice parameters</topic><topic>Lattice strain</topic><topic>Lattice vibration</topic><topic>Low temperature</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Photoelectrons</topic><topic>Raman spectra</topic><topic>Spectrum analysis</topic><topic>Stoichiometry</topic><topic>Surface roughness</topic><topic>Thin films</topic><topic>Unit cell</topic><topic>X ray photoelectron spectroscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yadav, Jyoti</creatorcontrib><creatorcontrib>Anoop, M. D.</creatorcontrib><creatorcontrib>Yadav, Nisha</creatorcontrib><creatorcontrib>Rao, N. Srinivasa</creatorcontrib><creatorcontrib>Singh, Fouran</creatorcontrib><creatorcontrib>Ichikawa, Takayuki</creatorcontrib><creatorcontrib>Jain, Ankur</creatorcontrib><creatorcontrib>Awasthi, Kamlendra</creatorcontrib><creatorcontrib>Singh, Rini</creatorcontrib><creatorcontrib>Kumar, Manoj</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yadav, Jyoti</au><au>Anoop, M. D.</au><au>Yadav, Nisha</au><au>Rao, N. Srinivasa</au><au>Singh, Fouran</au><au>Ichikawa, Takayuki</au><au>Jain, Ankur</au><au>Awasthi, Kamlendra</au><au>Singh, Rini</au><au>Kumar, Manoj</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tuning of charge carriers in Bi2Te3 thin films via swift heavy ion irradiation</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2023</date><risdate>2023</risdate><volume>34</volume><issue>3</issue><spage>175</spage><pages>175-</pages><artnum>175</artnum><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>The irradiation-induced effects of Ni
7+
ion irradiation on the structural and electrical properties of e-beam evaporation synthesized Bi
2
Te
3
thin films have been examined. X-ray Diffraction (XRD) results revealed that the films possessed a polycrystalline rhombohedral (R-3 m) crystal structure. No appreciable change was observed in lattice parameters
a = b
while
c
varied non-monotonically indicating an anisotropic variation of the unit cell under different ion fluences. X-ray peak profile analysis indicated a slight reduction in average crystallite size and an increase in lattice strain due to irradiation. Raman spectra of the films demonstrated the effect of irradiation on
A
1
u
1
modes evolved from c-axis vibrations with ion fluence. The observed decrease in surface roughness through Atomic Force Microscopy (AFM) images up to 3 × 10
12
ions/cm
2
might be due to the formation of nanocrystallites with small sizes on the surface. The composition of the as-prepared thin films was found to be near stoichiometry of Bi
2
Te
3
as revealed by X-ray Photoelectron Spectroscopy (XPS) analysis. The resistivity of films gets increased up to 3 × 10
12
ions/cm
2
as evident from the low-temperature transport measurements. The variation correlation of electrical resistivity with the Hall coefficient is examined as a function of ion fluence. The irradiation-induced crossover behavior is resulted in films with ion fluence from the
n
to
p
-type carriers. Interestingly, the bulk charge carriers are compensated with tunning of the Fermi level in ion-irradiated thin films.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-022-09478-x</doi><orcidid>https://orcid.org/0000-0001-5434-6101</orcidid></addata></record> |
| fulltext | fulltext |
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| ispartof | Journal of materials science. Materials in electronics, 2023, Vol.34 (3), p.175, Article 175 |
| issn | 0957-4522 1573-482X |
| language | eng |
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| source | SpringerLink Journals - AutoHoldings |
| subjects | Bismuth tellurides Characterization and Evaluation of Materials Chemistry and Materials Science Coefficient of variation Crystal lattices Crystal structure Crystallites Current carriers Electrical properties Electrical resistivity Electron beams Fluence Hall effect Heavy ions Ion irradiation Lattice parameters Lattice strain Lattice vibration Low temperature Materials Science Optical and Electronic Materials Photoelectrons Raman spectra Spectrum analysis Stoichiometry Surface roughness Thin films Unit cell X ray photoelectron spectroscopy |
| title | Tuning of charge carriers in Bi2Te3 thin films via swift heavy ion irradiation |
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