Studying Electronic and Thermoelectric Properties of Ga-doped ZnO using Rigid Band Model
A combination of a first-principles electronic structure and Boltzmann transport calculations was used to study the electronic and thermoelectric properties of Ga-doped ZnO (GZO). Band structure of GZO showed rigid-like behavior with that of pristine ZnO; however, the only difference was seen in the...
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| Veröffentlicht in: | Arabian journal for science and engineering (2011) 2023, Vol.48 (1), p.721-725 |
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| container_title | Arabian journal for science and engineering (2011) |
| container_volume | 48 |
| creator | Hoang, Hieu T. Truong, Dai Cao Anh, Nguyen Huynh Tuan Kawazoe, Yoshiyuki Cuong, Do Duc Phan, Bach Thang |
| description | A combination of a first-principles electronic structure and Boltzmann transport calculations was used to study the electronic and thermoelectric properties of Ga-doped ZnO (GZO). Band structure of GZO showed rigid-like behavior with that of pristine ZnO; however, the only difference was seen in the position of Fermi level due to an additional electron. Therefore, the thermoelectric properties of GZO were found to show similar behavior with pristine ZnO. We suggest that it is possible to control the carrier concentration of the doped system by controlling the Ga concentration, which can optimize the power factor of GZO. |
| doi_str_mv | 10.1007/s13369-022-06837-y |
| format | Article |
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We suggest that it is possible to control the carrier concentration of the doped system by controlling the Ga concentration, which can optimize the power factor of GZO.</description><subject>Carrier density</subject><subject>Electronic structure</subject><subject>Engineering</subject><subject>First principles</subject><subject>Humanities and Social Sciences</subject><subject>multidisciplinary</subject><subject>Power factor</subject><subject>Research Article-Physics</subject><subject>Science</subject><subject>Thermoelectricity</subject><subject>Zinc oxide</subject><issn>2193-567X</issn><issn>1319-8025</issn><issn>2191-4281</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp9kEFPwzAMhSMEEtPYH-AUiXMgcdK0PcI0BtIQCIY0cYnaxh1FWzOS9tB_T7YhceNk--l9tvwIuRT8WnCe3gQhpc4ZB2BcZzJlwwkZgcgFU5CJ00MvWaLT1TmZhNCUXGUyT4SQI7J663o7NO2azjZYdd61TUWL1tLlJ_qtw4MYpRfvdui7BgN1NZ0XzMbZ0o_2mfZhj78268bSuz365CxuLshZXWwCTn7rmLzfz5bTB7Z4nj9ObxeskiLvWJEkiqOUINMKCm2TlIOqywQSJUBjmQOWukQoM4FWKV4o4MhBilKqvNJSjsnVce_Ou-8eQ2e-XO_beNJAqkX8OpqjC46uyrsQPNZm55tt4QcjuNmHaI4hmhiiOYRohgjJIxSiuV2j_1v9D_UD5Wh0EQ</recordid><startdate>2023</startdate><enddate>2023</enddate><creator>Hoang, Hieu T.</creator><creator>Truong, Dai Cao</creator><creator>Anh, Nguyen Huynh Tuan</creator><creator>Kawazoe, Yoshiyuki</creator><creator>Cuong, Do Duc</creator><creator>Phan, Bach Thang</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-5483-1622</orcidid></search><sort><creationdate>2023</creationdate><title>Studying Electronic and Thermoelectric Properties of Ga-doped ZnO using Rigid Band Model</title><author>Hoang, Hieu T. ; Truong, Dai Cao ; Anh, Nguyen Huynh Tuan ; Kawazoe, Yoshiyuki ; Cuong, Do Duc ; Phan, Bach Thang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-a5540e33237c2a6d57024fb5254126eb92eb6be2b81ed440a420e0231b349c633</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Carrier density</topic><topic>Electronic structure</topic><topic>Engineering</topic><topic>First principles</topic><topic>Humanities and Social Sciences</topic><topic>multidisciplinary</topic><topic>Power factor</topic><topic>Research Article-Physics</topic><topic>Science</topic><topic>Thermoelectricity</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hoang, Hieu T.</creatorcontrib><creatorcontrib>Truong, Dai Cao</creatorcontrib><creatorcontrib>Anh, Nguyen Huynh Tuan</creatorcontrib><creatorcontrib>Kawazoe, Yoshiyuki</creatorcontrib><creatorcontrib>Cuong, Do Duc</creatorcontrib><creatorcontrib>Phan, Bach Thang</creatorcontrib><collection>CrossRef</collection><jtitle>Arabian journal for science and engineering (2011)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hoang, Hieu T.</au><au>Truong, Dai Cao</au><au>Anh, Nguyen Huynh Tuan</au><au>Kawazoe, Yoshiyuki</au><au>Cuong, Do Duc</au><au>Phan, Bach Thang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Studying Electronic and Thermoelectric Properties of Ga-doped ZnO using Rigid Band Model</atitle><jtitle>Arabian journal for science and engineering (2011)</jtitle><stitle>Arab J Sci Eng</stitle><date>2023</date><risdate>2023</risdate><volume>48</volume><issue>1</issue><spage>721</spage><epage>725</epage><pages>721-725</pages><issn>2193-567X</issn><issn>1319-8025</issn><eissn>2191-4281</eissn><abstract>A combination of a first-principles electronic structure and Boltzmann transport calculations was used to study the electronic and thermoelectric properties of Ga-doped ZnO (GZO). 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| subjects | Carrier density Electronic structure Engineering First principles Humanities and Social Sciences multidisciplinary Power factor Research Article-Physics Science Thermoelectricity Zinc oxide |
| title | Studying Electronic and Thermoelectric Properties of Ga-doped ZnO using Rigid Band Model |
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