Numerical Modelling on the Effect of Temperature on MOCVD Growth of ZnO Using Diethylzinc and Tertiarybutanol
The dynamic growth of MOCVD-grown ZnO thin films under temperature effect was systematically investigated by a numerical approach using computational fluid dynamics (CFD) technique. A three-dimensional (3D) reactor-scale model was developed to determine the growth rate and uniformity of ZnO thin fil...
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| Veröffentlicht in: | Coatings (Basel) 2022-12, Vol.12 (12), p.1991 |
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| container_issue | 12 |
| container_start_page | 1991 |
| container_title | Coatings (Basel) |
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| creator | Wu, Yiyi Wu, Rui Zhou, Xiaosong Wang, Hongli Hu, Yang Nie, Dengpan Bao, Dongmei |
| description | The dynamic growth of MOCVD-grown ZnO thin films under temperature effect was systematically investigated by a numerical approach using computational fluid dynamics (CFD) technique. A three-dimensional (3D) reactor-scale model was developed to determine the growth rate and uniformity of ZnO thin film in the temperature range of 593 K to 713 K. The mixed-convection flow and heat transfer inside the reactor chamber were assessed. The results showed that as the temperature increased, ZnO thickness increased initially before decreasing. At 673 K, the highest deposition rate with acceptable uniformity was achieved. The admixture of transverse and longitudinal rolls was observed for the flow conditions. Temperature variations were found to directly affect the axial and lateral uniformity of deposition, but had a minor impact on the size and position of transverse rolls. Experimental verification studies were conducted, and high-quality ZnO films were successfully fabricated by using diethylzinc (DEZn) and tertiarybutanol (t-BuOH) as precursors; it was found that the comprehensive thickness and structural properties of ZnO deposited at temperature of 673 K are preferred. Experimental results and numerical simulations exhibited good agreement. |
| doi_str_mv | 10.3390/coatings12121991 |
| format | Article |
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A three-dimensional (3D) reactor-scale model was developed to determine the growth rate and uniformity of ZnO thin film in the temperature range of 593 K to 713 K. The mixed-convection flow and heat transfer inside the reactor chamber were assessed. The results showed that as the temperature increased, ZnO thickness increased initially before decreasing. At 673 K, the highest deposition rate with acceptable uniformity was achieved. The admixture of transverse and longitudinal rolls was observed for the flow conditions. Temperature variations were found to directly affect the axial and lateral uniformity of deposition, but had a minor impact on the size and position of transverse rolls. Experimental verification studies were conducted, and high-quality ZnO films were successfully fabricated by using diethylzinc (DEZn) and tertiarybutanol (t-BuOH) as precursors; it was found that the comprehensive thickness and structural properties of ZnO deposited at temperature of 673 K are preferred. Experimental results and numerical simulations exhibited good agreement.</description><identifier>ISSN: 2079-6412</identifier><identifier>EISSN: 2079-6412</identifier><identifier>DOI: 10.3390/coatings12121991</identifier><language>eng</language><publisher>Basel: MDPI AG</publisher><subject>Admixtures ; Boundary conditions ; Chemical reactions ; Chemical vapor deposition ; Computational fluid dynamics ; Dielectric films ; Fluid dynamics ; Gas flow ; Gases ; Heat ; II-VI semiconductors ; Mathematical models ; Metalorganic chemical vapor deposition ; Nitrogen ; Numerical analysis ; Organic chemicals ; Photovoltaic cells ; Reynolds number ; Rolls ; Scale models ; Simulation ; Simulation methods ; Temperature effects ; Thickness ; Thin films ; Three dimensional models ; Zinc oxide ; Zinc oxides</subject><ispartof>Coatings (Basel), 2022-12, Vol.12 (12), p.1991</ispartof><rights>COPYRIGHT 2022 MDPI AG</rights><rights>2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). 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A three-dimensional (3D) reactor-scale model was developed to determine the growth rate and uniformity of ZnO thin film in the temperature range of 593 K to 713 K. The mixed-convection flow and heat transfer inside the reactor chamber were assessed. The results showed that as the temperature increased, ZnO thickness increased initially before decreasing. At 673 K, the highest deposition rate with acceptable uniformity was achieved. The admixture of transverse and longitudinal rolls was observed for the flow conditions. Temperature variations were found to directly affect the axial and lateral uniformity of deposition, but had a minor impact on the size and position of transverse rolls. Experimental verification studies were conducted, and high-quality ZnO films were successfully fabricated by using diethylzinc (DEZn) and tertiarybutanol (t-BuOH) as precursors; it was found that the comprehensive thickness and structural properties of ZnO deposited at temperature of 673 K are preferred. Experimental results and numerical simulations exhibited good agreement.</description><subject>Admixtures</subject><subject>Boundary conditions</subject><subject>Chemical reactions</subject><subject>Chemical vapor deposition</subject><subject>Computational fluid dynamics</subject><subject>Dielectric films</subject><subject>Fluid dynamics</subject><subject>Gas flow</subject><subject>Gases</subject><subject>Heat</subject><subject>II-VI semiconductors</subject><subject>Mathematical models</subject><subject>Metalorganic chemical vapor deposition</subject><subject>Nitrogen</subject><subject>Numerical analysis</subject><subject>Organic chemicals</subject><subject>Photovoltaic cells</subject><subject>Reynolds number</subject><subject>Rolls</subject><subject>Scale models</subject><subject>Simulation</subject><subject>Simulation methods</subject><subject>Temperature effects</subject><subject>Thickness</subject><subject>Thin films</subject><subject>Three dimensional models</subject><subject>Zinc oxide</subject><subject>Zinc oxides</subject><issn>2079-6412</issn><issn>2079-6412</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNptUU1LAzEQXUTBot49BjxX89VtcpT6Ca29tB68LNnspE3ZTWqSReqvN0XBD5x3mGHmvTcwUxTnBF8yJvGV9ipZt4qEZkhJDooBxWM5LDmhhz_q4-Isxg3OIQkTRA6K7qnvIFitWjTzDbRttkHeobQGdGsM6IS8QQvothBU6gPsh7P55PkG3Qf_ltb78Yubo2XcK28spPWufbdOI-WaLAzJqrCr-6Scb0-LI6PaCGdf-aRY3t0uJg_D6fz-cXI9HWomcBoSrIyhnHNaCsaVFNQY1pBGGGWoBAaGElM3UNacl7WQhHKiJRlTU_OR1IKdFBefvtvgX3uIqdr4Pri8sqLjUZldMS6_WSvVQmWd8Sko3dmoq-sxH3EpBGGZdfkPK6OBzmrvwNjc_yXAnwIdfIwBTLUNtstHqAiu9u-q_r6LfQDokIib</recordid><startdate>20221201</startdate><enddate>20221201</enddate><creator>Wu, Yiyi</creator><creator>Wu, Rui</creator><creator>Zhou, Xiaosong</creator><creator>Wang, Hongli</creator><creator>Hu, Yang</creator><creator>Nie, Dengpan</creator><creator>Bao, Dongmei</creator><general>MDPI AG</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope></search><sort><creationdate>20221201</creationdate><title>Numerical Modelling on the Effect of Temperature on MOCVD Growth of ZnO Using Diethylzinc and Tertiarybutanol</title><author>Wu, Yiyi ; 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A three-dimensional (3D) reactor-scale model was developed to determine the growth rate and uniformity of ZnO thin film in the temperature range of 593 K to 713 K. The mixed-convection flow and heat transfer inside the reactor chamber were assessed. The results showed that as the temperature increased, ZnO thickness increased initially before decreasing. At 673 K, the highest deposition rate with acceptable uniformity was achieved. The admixture of transverse and longitudinal rolls was observed for the flow conditions. Temperature variations were found to directly affect the axial and lateral uniformity of deposition, but had a minor impact on the size and position of transverse rolls. Experimental verification studies were conducted, and high-quality ZnO films were successfully fabricated by using diethylzinc (DEZn) and tertiarybutanol (t-BuOH) as precursors; it was found that the comprehensive thickness and structural properties of ZnO deposited at temperature of 673 K are preferred. Experimental results and numerical simulations exhibited good agreement.</abstract><cop>Basel</cop><pub>MDPI AG</pub><doi>10.3390/coatings12121991</doi><oa>free_for_read</oa></addata></record> |
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| source | MDPI - Multidisciplinary Digital Publishing Institute; EZB-FREE-00999 freely available EZB journals; Alma/SFX Local Collection |
| subjects | Admixtures Boundary conditions Chemical reactions Chemical vapor deposition Computational fluid dynamics Dielectric films Fluid dynamics Gas flow Gases Heat II-VI semiconductors Mathematical models Metalorganic chemical vapor deposition Nitrogen Numerical analysis Organic chemicals Photovoltaic cells Reynolds number Rolls Scale models Simulation Simulation methods Temperature effects Thickness Thin films Three dimensional models Zinc oxide Zinc oxides |
| title | Numerical Modelling on the Effect of Temperature on MOCVD Growth of ZnO Using Diethylzinc and Tertiarybutanol |
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