Top-Illuminated Avalanche Photodiodes With Cascaded Multiplication Layers for High-Speed and Wide Dynamic Range Performance

In this work, a novel top-illuminated avalanche photodiode (APD) with a In 0.52 Al 0.48 As multiplication (M-) layer is demonstrated. The cascaded M-layer design combined with the unique p-side up mesa structure allows relaxation of the fundamental trade-off between the gain-bandwidth product and th...

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Veröffentlicht in:	Journal of lightwave technology 2022-12, Vol.40 (24), p.7893-7900
Hauptverfasser:	Naseem, Wang, Po-Shun, Ahmad, Zohauddin, Parvez, Syed Hasan, Yang, Sean, Chen, H.-S., Chang, Hsiang-Szu, Huang, Jack Jia-Sheng, Shi, Jin-Wei
Format:	Artikel
Sprache:	eng
Schlagworte:	Avalanche diodes Avalanche photodiode Avalanche photodiodes Bandwidth Dark current High speed Indium phosphide Optical receivers Optical saturation Optical sensors p-i-n photodiode Photodiodes Saturation Sensitivity enhancement
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