Top-Illuminated Avalanche Photodiodes With Cascaded Multiplication Layers for High-Speed and Wide Dynamic Range Performance
In this work, a novel top-illuminated avalanche photodiode (APD) with a In 0.52 Al 0.48 As multiplication (M-) layer is demonstrated. The cascaded M-layer design combined with the unique p-side up mesa structure allows relaxation of the fundamental trade-off between the gain-bandwidth product and th...
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| Veröffentlicht in: | Journal of lightwave technology 2022-12, Vol.40 (24), p.7893-7900 |
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| container_title | Journal of lightwave technology |
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| creator | Naseem Wang, Po-Shun Ahmad, Zohauddin Parvez, Syed Hasan Yang, Sean Chen, H.-S. Chang, Hsiang-Szu Huang, Jack Jia-Sheng Shi, Jin-Wei |
| description | In this work, a novel top-illuminated avalanche photodiode (APD) with a In 0.52 Al 0.48 As multiplication (M-) layer is demonstrated. The cascaded M-layer design combined with the unique p-side up mesa structure allows relaxation of the fundamental trade-off between the gain-bandwidth product and the dark current. This leads to the simultaneous high-responsivity, high-speed, high-saturation-power, and low-dark current characteristics of our APDs. At around 0.9 V br operation, the demonstrated device with its simple top-illuminated structure and large active window (mesa) diameter of 14 (24) μm exhibits a high responsivity (2.23 A/W), wide optical-to-electrical bandwidth (30 GHz), large gain-bandwidth product (270 GHz), low dark current (∼200 nA), and a saturation current as high as 11 mA. The excellent performance of this APD structure opens up new possibilities to further enhance the sensitivity performance of receivers for coherent communications or 106 Gbit/sec PAM-4 applications. |
| doi_str_mv | 10.1109/JLT.2022.3204743 |
| format | Article |
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The cascaded M-layer design combined with the unique p-side up mesa structure allows relaxation of the fundamental trade-off between the gain-bandwidth product and the dark current. This leads to the simultaneous high-responsivity, high-speed, high-saturation-power, and low-dark current characteristics of our APDs. At around 0.9 V br operation, the demonstrated device with its simple top-illuminated structure and large active window (mesa) diameter of 14 (24) μm exhibits a high responsivity (2.23 A/W), wide optical-to-electrical bandwidth (30 GHz), large gain-bandwidth product (270 GHz), low dark current (∼200 nA), and a saturation current as high as 11 mA. 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(IEEE) 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c221t-b349ecb18a6bb9b89884e074740033ee46a7e0820b249c46f7a5635182b56f233</citedby><cites>FETCH-LOGICAL-c221t-b349ecb18a6bb9b89884e074740033ee46a7e0820b249c46f7a5635182b56f233</cites><orcidid>0000-0002-9991-5678 ; 0000-0003-0139-514X ; 0000-0003-2186-1371</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9880522$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9880522$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Naseem</creatorcontrib><creatorcontrib>Wang, Po-Shun</creatorcontrib><creatorcontrib>Ahmad, Zohauddin</creatorcontrib><creatorcontrib>Parvez, Syed Hasan</creatorcontrib><creatorcontrib>Yang, Sean</creatorcontrib><creatorcontrib>Chen, H.-S.</creatorcontrib><creatorcontrib>Chang, Hsiang-Szu</creatorcontrib><creatorcontrib>Huang, Jack Jia-Sheng</creatorcontrib><creatorcontrib>Shi, Jin-Wei</creatorcontrib><title>Top-Illuminated Avalanche Photodiodes With Cascaded Multiplication Layers for High-Speed and Wide Dynamic Range Performance</title><title>Journal of lightwave technology</title><addtitle>JLT</addtitle><description>In this work, a novel top-illuminated avalanche photodiode (APD) with a In 0.52 Al 0.48 As multiplication (M-) layer is demonstrated. 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The excellent performance of this APD structure opens up new possibilities to further enhance the sensitivity performance of receivers for coherent communications or 106 Gbit/sec PAM-4 applications.</description><subject>Avalanche diodes</subject><subject>Avalanche photodiode</subject><subject>Avalanche photodiodes</subject><subject>Bandwidth</subject><subject>Dark current</subject><subject>High speed</subject><subject>Indium phosphide</subject><subject>Optical receivers</subject><subject>Optical saturation</subject><subject>Optical sensors</subject><subject>p-i-n photodiode</subject><subject>Photodiodes</subject><subject>Saturation</subject><subject>Sensitivity enhancement</subject><issn>0733-8724</issn><issn>1558-2213</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM1LwzAYxoMoOKd3wUvAc2c-m_Q45scmE0UnHkvavt0yuqYmnTD8583Y8PRefs_H-yB0TcmIUpLdPc8XI0YYG3FGhBL8BA2olDphjPJTNCCK80QrJs7RRQhrQqgQWg3Q78J1yaxpthvbmh4qPP4xjWnLFeC3letdZV0FAX_ZfoUnJpSmiszLtult19jS9Na1eG524AOuncdTu1wlHx1EyLRVlFWA73et2dgSv5t2GV3BR3ATI-ASndWmCXB1vEP0-fiwmEyT-evTbDKeJ2Us3ycFFxmUBdUmLYqs0JnWAoiKTxLCOYBIjQKiGSmYyEqR1srIlEuqWSHTmnE-RLcH38677y2EPl-7rW9jZM6UTKVUhNJIkQNVeheChzrvvN0Yv8spyfcT53HifD9xfpw4Sm4OEgsA_3jsRyRj_A-bWHdP</recordid><startdate>20221215</startdate><enddate>20221215</enddate><creator>Naseem</creator><creator>Wang, Po-Shun</creator><creator>Ahmad, Zohauddin</creator><creator>Parvez, Syed Hasan</creator><creator>Yang, Sean</creator><creator>Chen, H.-S.</creator><creator>Chang, Hsiang-Szu</creator><creator>Huang, Jack Jia-Sheng</creator><creator>Shi, Jin-Wei</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| subjects | Avalanche diodes Avalanche photodiode Avalanche photodiodes Bandwidth Dark current High speed Indium phosphide Optical receivers Optical saturation Optical sensors p-i-n photodiode Photodiodes Saturation Sensitivity enhancement |
| title | Top-Illuminated Avalanche Photodiodes With Cascaded Multiplication Layers for High-Speed and Wide Dynamic Range Performance |
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