Research progress of optoelectronic devices based on two-dimensional MoS2 materials
Molybdenum disulfide (MoS 2 ) is a widely used optoelectronic material with exceptional electrical, magnetic, optical, and mechanical properties. Due to the quantum confinement effect, high absorption coefficient, high surface-volume ratio, and tunable bandgap, nano-MoS 2 -based devices exhibit size...
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| Veröffentlicht in: | Rare metals 2023, Vol.42 (1), p.17-38 |
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| container_title | Rare metals |
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| creator | Zou, Liang-Rui Sang, Dan-Dan Yao, Yu Wang, Xue-Ting Zheng, Yuan-Yuan Wang, Nai-Zhou Wang, Cong Wang, Qing-Lin |
| description | Molybdenum disulfide (MoS
2
) is a widely used optoelectronic material with exceptional electrical, magnetic, optical, and mechanical properties. Due to the quantum confinement effect, high absorption coefficient, high surface-volume ratio, and tunable bandgap, nano-MoS
2
-based devices exhibit size-dependent and novel optoelectronic properties, such as excellent photoluminescence and high anisotropic electrical, mechanical, and thermal properties. This review focuses mainly on the latest progress of optoelectronic device applications based on two-dimensional (2D) nano-MoS
2
. Various advanced devices, such as sensors, photodetectors, light-emitting diodes (LEDs), memory applications, and field-effect transistors (FETs) are considered. The review will provide a new perspective in promoting the development of 2D nanomaterial-based photoelectric applications.
Graphical abstract |
| doi_str_mv | 10.1007/s12598-022-02113-y |
| format | Article |
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2
) is a widely used optoelectronic material with exceptional electrical, magnetic, optical, and mechanical properties. Due to the quantum confinement effect, high absorption coefficient, high surface-volume ratio, and tunable bandgap, nano-MoS
2
-based devices exhibit size-dependent and novel optoelectronic properties, such as excellent photoluminescence and high anisotropic electrical, mechanical, and thermal properties. This review focuses mainly on the latest progress of optoelectronic device applications based on two-dimensional (2D) nano-MoS
2
. Various advanced devices, such as sensors, photodetectors, light-emitting diodes (LEDs), memory applications, and field-effect transistors (FETs) are considered. The review will provide a new perspective in promoting the development of 2D nanomaterial-based photoelectric applications.
Graphical abstract</description><identifier>ISSN: 1001-0521</identifier><identifier>EISSN: 1867-7185</identifier><identifier>DOI: 10.1007/s12598-022-02113-y</identifier><language>eng</language><publisher>Beijing: Nonferrous Metals Society of China</publisher><subject>Absorptivity ; Biomaterials ; Chemistry and Materials Science ; Energy ; Energy gap ; Field effect transistors ; Light emitting diodes ; Magnetic properties ; Materials Engineering ; Materials Science ; Mechanical properties ; Metallic Materials ; Molybdenum disulfide ; Nanomaterials ; Nanoscale Science and Technology ; Optical properties ; Optoelectronic devices ; Photoelectricity ; Photoluminescence ; Physical Chemistry ; Quantum confinement ; Review ; Semiconductor devices ; Thermodynamic properties</subject><ispartof>Rare metals, 2023, Vol.42 (1), p.17-38</ispartof><rights>Youke Publishing Co.,Ltd 2022</rights><rights>Youke Publishing Co.,Ltd 2022.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-6277ee0bf565f269bb148423b434b13cf20b052c9bf7591ec4d85aa3e658d4503</citedby><cites>FETCH-LOGICAL-c319t-6277ee0bf565f269bb148423b434b13cf20b052c9bf7591ec4d85aa3e658d4503</cites><orcidid>0000-0003-3950-4700 ; 0000-0002-3073-8853 ; 0000-0002-9202-5656 ; 0000-0002-5440-4348</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s12598-022-02113-y$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s12598-022-02113-y$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Zou, Liang-Rui</creatorcontrib><creatorcontrib>Sang, Dan-Dan</creatorcontrib><creatorcontrib>Yao, Yu</creatorcontrib><creatorcontrib>Wang, Xue-Ting</creatorcontrib><creatorcontrib>Zheng, Yuan-Yuan</creatorcontrib><creatorcontrib>Wang, Nai-Zhou</creatorcontrib><creatorcontrib>Wang, Cong</creatorcontrib><creatorcontrib>Wang, Qing-Lin</creatorcontrib><title>Research progress of optoelectronic devices based on two-dimensional MoS2 materials</title><title>Rare metals</title><addtitle>Rare Met</addtitle><description>Molybdenum disulfide (MoS
2
) is a widely used optoelectronic material with exceptional electrical, magnetic, optical, and mechanical properties. Due to the quantum confinement effect, high absorption coefficient, high surface-volume ratio, and tunable bandgap, nano-MoS
2
-based devices exhibit size-dependent and novel optoelectronic properties, such as excellent photoluminescence and high anisotropic electrical, mechanical, and thermal properties. This review focuses mainly on the latest progress of optoelectronic device applications based on two-dimensional (2D) nano-MoS
2
. Various advanced devices, such as sensors, photodetectors, light-emitting diodes (LEDs), memory applications, and field-effect transistors (FETs) are considered. The review will provide a new perspective in promoting the development of 2D nanomaterial-based photoelectric applications.
Graphical abstract</description><subject>Absorptivity</subject><subject>Biomaterials</subject><subject>Chemistry and Materials Science</subject><subject>Energy</subject><subject>Energy gap</subject><subject>Field effect transistors</subject><subject>Light emitting diodes</subject><subject>Magnetic properties</subject><subject>Materials Engineering</subject><subject>Materials Science</subject><subject>Mechanical properties</subject><subject>Metallic Materials</subject><subject>Molybdenum disulfide</subject><subject>Nanomaterials</subject><subject>Nanoscale Science and Technology</subject><subject>Optical properties</subject><subject>Optoelectronic devices</subject><subject>Photoelectricity</subject><subject>Photoluminescence</subject><subject>Physical Chemistry</subject><subject>Quantum confinement</subject><subject>Review</subject><subject>Semiconductor devices</subject><subject>Thermodynamic properties</subject><issn>1001-0521</issn><issn>1867-7185</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp9kEtLAzEUhYMoWKt_wFXAdTQ3j3kspfiCimB1HZLMnTqlndRkqvTfGx3BnYvLuYtzDoePkHPgl8B5eZVA6LpiXIh8AJLtD8gEqqJkJVT6MP-cA-NawDE5SWnFuVJFwSdk8YwJbfRvdBvDMmJKNLQ0bIeAa_RDDH3naYMfncdEnU3Y0NDT4TOwpttgn7rQ2zV9DAtBN3bA2Nl1OiVHbRY8-9Upeb29eZnds_nT3cPses68hHpghShLRO5aXehWFLVzoColpFNSOZC-Fdzlxb52balrQK-aSlsrsdBVozSXU3Ix9ubp7ztMg1mFXcx7khGl1lUNElR2idHlY0gpYmu2sdvYuDfAzTc8M8IzGZ75gWf2OSTHUMrmfonxr_qf1BcdNXKl</recordid><startdate>2023</startdate><enddate>2023</enddate><creator>Zou, Liang-Rui</creator><creator>Sang, Dan-Dan</creator><creator>Yao, Yu</creator><creator>Wang, Xue-Ting</creator><creator>Zheng, Yuan-Yuan</creator><creator>Wang, Nai-Zhou</creator><creator>Wang, Cong</creator><creator>Wang, Qing-Lin</creator><general>Nonferrous Metals Society of China</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><orcidid>https://orcid.org/0000-0003-3950-4700</orcidid><orcidid>https://orcid.org/0000-0002-3073-8853</orcidid><orcidid>https://orcid.org/0000-0002-9202-5656</orcidid><orcidid>https://orcid.org/0000-0002-5440-4348</orcidid></search><sort><creationdate>2023</creationdate><title>Research progress of optoelectronic devices based on two-dimensional MoS2 materials</title><author>Zou, Liang-Rui ; Sang, Dan-Dan ; Yao, Yu ; Wang, Xue-Ting ; Zheng, Yuan-Yuan ; Wang, Nai-Zhou ; Wang, Cong ; Wang, Qing-Lin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-6277ee0bf565f269bb148423b434b13cf20b052c9bf7591ec4d85aa3e658d4503</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Absorptivity</topic><topic>Biomaterials</topic><topic>Chemistry and Materials Science</topic><topic>Energy</topic><topic>Energy gap</topic><topic>Field effect transistors</topic><topic>Light emitting diodes</topic><topic>Magnetic properties</topic><topic>Materials Engineering</topic><topic>Materials Science</topic><topic>Mechanical properties</topic><topic>Metallic Materials</topic><topic>Molybdenum disulfide</topic><topic>Nanomaterials</topic><topic>Nanoscale Science and Technology</topic><topic>Optical properties</topic><topic>Optoelectronic devices</topic><topic>Photoelectricity</topic><topic>Photoluminescence</topic><topic>Physical Chemistry</topic><topic>Quantum confinement</topic><topic>Review</topic><topic>Semiconductor devices</topic><topic>Thermodynamic properties</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zou, Liang-Rui</creatorcontrib><creatorcontrib>Sang, Dan-Dan</creatorcontrib><creatorcontrib>Yao, Yu</creatorcontrib><creatorcontrib>Wang, Xue-Ting</creatorcontrib><creatorcontrib>Zheng, Yuan-Yuan</creatorcontrib><creatorcontrib>Wang, Nai-Zhou</creatorcontrib><creatorcontrib>Wang, Cong</creatorcontrib><creatorcontrib>Wang, Qing-Lin</creatorcontrib><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Rare metals</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zou, Liang-Rui</au><au>Sang, Dan-Dan</au><au>Yao, Yu</au><au>Wang, Xue-Ting</au><au>Zheng, Yuan-Yuan</au><au>Wang, Nai-Zhou</au><au>Wang, Cong</au><au>Wang, Qing-Lin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Research progress of optoelectronic devices based on two-dimensional MoS2 materials</atitle><jtitle>Rare metals</jtitle><stitle>Rare Met</stitle><date>2023</date><risdate>2023</risdate><volume>42</volume><issue>1</issue><spage>17</spage><epage>38</epage><pages>17-38</pages><issn>1001-0521</issn><eissn>1867-7185</eissn><abstract>Molybdenum disulfide (MoS
2
) is a widely used optoelectronic material with exceptional electrical, magnetic, optical, and mechanical properties. Due to the quantum confinement effect, high absorption coefficient, high surface-volume ratio, and tunable bandgap, nano-MoS
2
-based devices exhibit size-dependent and novel optoelectronic properties, such as excellent photoluminescence and high anisotropic electrical, mechanical, and thermal properties. This review focuses mainly on the latest progress of optoelectronic device applications based on two-dimensional (2D) nano-MoS
2
. Various advanced devices, such as sensors, photodetectors, light-emitting diodes (LEDs), memory applications, and field-effect transistors (FETs) are considered. The review will provide a new perspective in promoting the development of 2D nanomaterial-based photoelectric applications.
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| language | eng |
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| source | SpringerNature Journals; Alma/SFX Local Collection |
| subjects | Absorptivity Biomaterials Chemistry and Materials Science Energy Energy gap Field effect transistors Light emitting diodes Magnetic properties Materials Engineering Materials Science Mechanical properties Metallic Materials Molybdenum disulfide Nanomaterials Nanoscale Science and Technology Optical properties Optoelectronic devices Photoelectricity Photoluminescence Physical Chemistry Quantum confinement Review Semiconductor devices Thermodynamic properties |
| title | Research progress of optoelectronic devices based on two-dimensional MoS2 materials |
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