Atomic Layer Deposition of Sb2Te3/GeTe Superlattice Film and Its Melt‐Quenching‐Free Phase‐Transition Mechanism for Phase‐Change Memory

Atomic layer deposition (ALD) of Sb2Te3/GeTe superlattice (SL) film on planar and vertical sidewall areas containing TiN metal and SiO2 insulator is demonstrated. The peculiar chemical affinity of the ALD precursor to the substrate surface and the 2D nature of the Sb2Te3 enable the growth of an in s...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Weinheim) 2022-12, Vol.34 (50), p.n/a
Hauptverfasser:	Yoo, Chanyoung, Jeon, Jeong Woo, Yoon, Seungjae, Cheng, Yan, Han, Gyuseung, Choi, Wonho, Park, Byongwoo, Jeon, Gwangsik, Jeon, Sangmin, Kim, Woohyun, Zheng, Yonghui, Lee, Jongho, Ahn, Junku, Cho, Sunglae, Clendenning, Scott B., Karpov, Ilya V., Lee, Yoon Kyung, Choi, Jung‐Hae, Hwang, Cheol Seong
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphization Antimony telluride atomic layer deposition Atomic layer epitaxy Compressive properties Crystallization Electromigration Face centered cubic lattice oriented growth phase‐change memory Preferred orientation Quenching Sb 2Te 3/GeTe superlattice Silicon dioxide Substrates Superlattices Switches switching current density switching mechanisms vertical devices
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!