AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications

A detailed investigation of DC and RF performance of AlGaN/GaN HEMT on 3C-SiC/low resistive silicon (LR-Si) substrate by introducing a thick GaN layer is reported in this paper. The hetero-epitaxial growth is achieved by metal organic chemical vapor deposition (MOCVD) on a commercially prepared 6-in...

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Veröffentlicht in:	IEICE Transactions on Electronics 2022/10/01, Vol.E105.C(10), pp.457-465
Hauptverfasser:	WAKEJIMA, Akio, BOSE, Arijit, BISWAS, Debaleen, HISHIKI, Shigeomi, OUCHI, Sumito, KITAHARA, Koichi, KAWAMURA, Keisuke
Format:	Artikel
Sprache:	eng
Schlagworte:	3C-SiC intermediate layer AlGaN/GaN Aluminum gallium nitrides Epitaxial growth Gallium nitrides GaN-on-Si high electron mobility transistor (HEMT) High electron mobility transistors High temperature Metalorganic chemical vapor deposition microwave amplifier Organic chemistry Silicon carbide Silicon substrates Temperature dependence Thermal stability
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