Theoretical study of the interface engineering for H-diamond field effect transistors with h-BN gate dielectric and graphite gate

Diamond has compelling advantages in power devices as an ultrawide-bandgap semiconductor. Using first-principles calculations, we systematically investigate the structural and electronic properties of hydrogen-terminated diamond (H-diamond) (111) van der Waals (vdW) heterostructures with graphite an...

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Veröffentlicht in:	Applied physics letters 2022-11, Vol.121 (21)
Hauptverfasser:	Gui, Qingzhong, Wang, Zhen, Cheng, Chunmin, Zha, Xiaoming, Robertson, John, Liu, Sheng, Zhang, Zhaofu, Guo, Yuzheng
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Boron nitride Charge transfer Contact resistance Diamonds Electronic devices Field effect transistors First principles Graphite Heterostructures Semiconductor devices Transistors Two dimensional materials
Online-Zugang:	Volltext
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