Effects of flexoelectric polarization on surface potential of dielectric thin-film heterostructures: A comparative study
Recently, flexoelectric effect has attracted considerable attention owing to ubiquitous existence in all dielectrics, regardless of the symmetry. It promises intriguingly physical phenomena, such as strain gradient-induced electric polarizations, photocurrents, and interfacial transports, as well as...
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description | Recently, flexoelectric effect has attracted considerable attention owing to ubiquitous existence in all dielectrics, regardless of the symmetry. It promises intriguingly physical phenomena, such as strain gradient-induced electric polarizations, photocurrents, and interfacial transports, as well as their electromechanical coupling with external force loading, in diverse materials for multifunctional applications in electronics. In this work, we report the flexoelectric-modulation on surface potential of LaFeO3 (LFO) thin-film heterostructures. The LFO thin film with or without the flexoelectric effect has been achieved by controlling epitaxial misfit against a substrate. Lattice structures and strain behaviors are observed by atomic-resolution high-angle annular dark-field imaging. Grown on a LaAlO3 substrate, a giant strain gradient of ∼3 × 106 m−1 is generated in the LFO thin film due to the gradual relaxation of large misfit strain with increasing thickness, yielding a robust flexoelectric polarization pointing to the heterostructure surface. In contrast, the LFO is almost fully strained on a SrTiO3 substrate due to the small lattice mismatch. The flexoelectric polarization results in an increase in surface potential in the LFO heterostructure due to the incomplete screening of positive polarization bound charges, as observed by scanning kelvin probe microscopy. Furthermore, x-ray photoelectron spectroscopy reveals that the flexoelectric polarization can downward bend the band alignment of the LFO layer and modulate the interfacial potential barriers. These results provide the way for experimental observations of the flexoelectric effect and deliver physical insight into deep understanding of interfacial electronic structures of flexoelectric-based devices. |
doi_str_mv | 10.1063/5.0114272 |
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fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2736031164</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2736031164</sourcerecordid><originalsourceid>FETCH-LOGICAL-c257t-2010950a0ebdcdc8e11a7fc2b855c4b05100d61164b7d3b9bd588caa74edaf873</originalsourceid><addsrcrecordid>eNp9kE1LAzEQhoMoWKsH_0HAk8LWyWaz2XorpX5AwYuel2w-aMq2WZOstP56U1vqQRAGhhme953hReiawIhASe_ZCAgpcp6foAEBzjNKSHWKBgBAs3LMyDm6CGGZRpZTOkCbmTFaxoCdwabVG6fbNHorceda4e2XiNatcarQeyOkTvuo19GKdidR9sjHhV1nxrYrvNBRexei72XsvQ4PeIKlW3XCJ7NPjUPs1fYSnRnRBn116EP0_jh7mz5n89enl-lknsmc8ZjlQGDMQIBulFSy0oQIbmTeVIzJogFGAFRJSFk0XNFm3ChWVVIIXmglTMXpEN3sfTvvPnodYr10vV-nk3XOaQl0p03U7Z6S6fHgtak7b1fCb2sC9S7YmtWHYBN7t2eDtPEnniP86fwvWHfK_Af_df4G4YmJVA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2736031164</pqid></control><display><type>article</type><title>Effects of flexoelectric polarization on surface potential of dielectric thin-film heterostructures: A comparative study</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Xu, Jibo ; Zheng, Weijie ; Yu, Yahui ; Ding, Chunyan ; Wu, Ming ; Wen, Zheng</creator><creatorcontrib>Xu, Jibo ; Zheng, Weijie ; Yu, Yahui ; Ding, Chunyan ; Wu, Ming ; Wen, Zheng</creatorcontrib><description>Recently, flexoelectric effect has attracted considerable attention owing to ubiquitous existence in all dielectrics, regardless of the symmetry. It promises intriguingly physical phenomena, such as strain gradient-induced electric polarizations, photocurrents, and interfacial transports, as well as their electromechanical coupling with external force loading, in diverse materials for multifunctional applications in electronics. In this work, we report the flexoelectric-modulation on surface potential of LaFeO3 (LFO) thin-film heterostructures. The LFO thin film with or without the flexoelectric effect has been achieved by controlling epitaxial misfit against a substrate. Lattice structures and strain behaviors are observed by atomic-resolution high-angle annular dark-field imaging. Grown on a LaAlO3 substrate, a giant strain gradient of ∼3 × 106 m−1 is generated in the LFO thin film due to the gradual relaxation of large misfit strain with increasing thickness, yielding a robust flexoelectric polarization pointing to the heterostructure surface. In contrast, the LFO is almost fully strained on a SrTiO3 substrate due to the small lattice mismatch. The flexoelectric polarization results in an increase in surface potential in the LFO heterostructure due to the incomplete screening of positive polarization bound charges, as observed by scanning kelvin probe microscopy. Furthermore, x-ray photoelectron spectroscopy reveals that the flexoelectric polarization can downward bend the band alignment of the LFO layer and modulate the interfacial potential barriers. These results provide the way for experimental observations of the flexoelectric effect and deliver physical insight into deep understanding of interfacial electronic structures of flexoelectric-based devices.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0114272</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Comparative studies ; Heterostructures ; Photoelectric effect ; Photoelectrons ; Polarization ; Potential barriers ; Substrates ; Thin films</subject><ispartof>Applied physics letters, 2022-11, Vol.121 (20)</ispartof><rights>Author(s)</rights><rights>2022 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c257t-2010950a0ebdcdc8e11a7fc2b855c4b05100d61164b7d3b9bd588caa74edaf873</citedby><cites>FETCH-LOGICAL-c257t-2010950a0ebdcdc8e11a7fc2b855c4b05100d61164b7d3b9bd588caa74edaf873</cites><orcidid>0000-0002-7362-6499 ; 0000-0001-5026-6585 ; 0000-0002-8499-9725</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/5.0114272$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76126</link.rule.ids></links><search><creatorcontrib>Xu, Jibo</creatorcontrib><creatorcontrib>Zheng, Weijie</creatorcontrib><creatorcontrib>Yu, Yahui</creatorcontrib><creatorcontrib>Ding, Chunyan</creatorcontrib><creatorcontrib>Wu, Ming</creatorcontrib><creatorcontrib>Wen, Zheng</creatorcontrib><title>Effects of flexoelectric polarization on surface potential of dielectric thin-film heterostructures: A comparative study</title><title>Applied physics letters</title><description>Recently, flexoelectric effect has attracted considerable attention owing to ubiquitous existence in all dielectrics, regardless of the symmetry. It promises intriguingly physical phenomena, such as strain gradient-induced electric polarizations, photocurrents, and interfacial transports, as well as their electromechanical coupling with external force loading, in diverse materials for multifunctional applications in electronics. In this work, we report the flexoelectric-modulation on surface potential of LaFeO3 (LFO) thin-film heterostructures. The LFO thin film with or without the flexoelectric effect has been achieved by controlling epitaxial misfit against a substrate. Lattice structures and strain behaviors are observed by atomic-resolution high-angle annular dark-field imaging. Grown on a LaAlO3 substrate, a giant strain gradient of ∼3 × 106 m−1 is generated in the LFO thin film due to the gradual relaxation of large misfit strain with increasing thickness, yielding a robust flexoelectric polarization pointing to the heterostructure surface. In contrast, the LFO is almost fully strained on a SrTiO3 substrate due to the small lattice mismatch. The flexoelectric polarization results in an increase in surface potential in the LFO heterostructure due to the incomplete screening of positive polarization bound charges, as observed by scanning kelvin probe microscopy. Furthermore, x-ray photoelectron spectroscopy reveals that the flexoelectric polarization can downward bend the band alignment of the LFO layer and modulate the interfacial potential barriers. These results provide the way for experimental observations of the flexoelectric effect and deliver physical insight into deep understanding of interfacial electronic structures of flexoelectric-based devices.</description><subject>Applied physics</subject><subject>Comparative studies</subject><subject>Heterostructures</subject><subject>Photoelectric effect</subject><subject>Photoelectrons</subject><subject>Polarization</subject><subject>Potential barriers</subject><subject>Substrates</subject><subject>Thin films</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWKsH_0HAk8LWyWaz2XorpX5AwYuel2w-aMq2WZOstP56U1vqQRAGhhme953hReiawIhASe_ZCAgpcp6foAEBzjNKSHWKBgBAs3LMyDm6CGGZRpZTOkCbmTFaxoCdwabVG6fbNHorceda4e2XiNatcarQeyOkTvuo19GKdidR9sjHhV1nxrYrvNBRexei72XsvQ4PeIKlW3XCJ7NPjUPs1fYSnRnRBn116EP0_jh7mz5n89enl-lknsmc8ZjlQGDMQIBulFSy0oQIbmTeVIzJogFGAFRJSFk0XNFm3ChWVVIIXmglTMXpEN3sfTvvPnodYr10vV-nk3XOaQl0p03U7Z6S6fHgtak7b1fCb2sC9S7YmtWHYBN7t2eDtPEnniP86fwvWHfK_Af_df4G4YmJVA</recordid><startdate>20221114</startdate><enddate>20221114</enddate><creator>Xu, Jibo</creator><creator>Zheng, Weijie</creator><creator>Yu, Yahui</creator><creator>Ding, Chunyan</creator><creator>Wu, Ming</creator><creator>Wen, Zheng</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-7362-6499</orcidid><orcidid>https://orcid.org/0000-0001-5026-6585</orcidid><orcidid>https://orcid.org/0000-0002-8499-9725</orcidid></search><sort><creationdate>20221114</creationdate><title>Effects of flexoelectric polarization on surface potential of dielectric thin-film heterostructures: A comparative study</title><author>Xu, Jibo ; Zheng, Weijie ; Yu, Yahui ; Ding, Chunyan ; Wu, Ming ; Wen, Zheng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c257t-2010950a0ebdcdc8e11a7fc2b855c4b05100d61164b7d3b9bd588caa74edaf873</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Applied physics</topic><topic>Comparative studies</topic><topic>Heterostructures</topic><topic>Photoelectric effect</topic><topic>Photoelectrons</topic><topic>Polarization</topic><topic>Potential barriers</topic><topic>Substrates</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Xu, Jibo</creatorcontrib><creatorcontrib>Zheng, Weijie</creatorcontrib><creatorcontrib>Yu, Yahui</creatorcontrib><creatorcontrib>Ding, Chunyan</creatorcontrib><creatorcontrib>Wu, Ming</creatorcontrib><creatorcontrib>Wen, Zheng</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Xu, Jibo</au><au>Zheng, Weijie</au><au>Yu, Yahui</au><au>Ding, Chunyan</au><au>Wu, Ming</au><au>Wen, Zheng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of flexoelectric polarization on surface potential of dielectric thin-film heterostructures: A comparative study</atitle><jtitle>Applied physics letters</jtitle><date>2022-11-14</date><risdate>2022</risdate><volume>121</volume><issue>20</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Recently, flexoelectric effect has attracted considerable attention owing to ubiquitous existence in all dielectrics, regardless of the symmetry. It promises intriguingly physical phenomena, such as strain gradient-induced electric polarizations, photocurrents, and interfacial transports, as well as their electromechanical coupling with external force loading, in diverse materials for multifunctional applications in electronics. In this work, we report the flexoelectric-modulation on surface potential of LaFeO3 (LFO) thin-film heterostructures. The LFO thin film with or without the flexoelectric effect has been achieved by controlling epitaxial misfit against a substrate. Lattice structures and strain behaviors are observed by atomic-resolution high-angle annular dark-field imaging. Grown on a LaAlO3 substrate, a giant strain gradient of ∼3 × 106 m−1 is generated in the LFO thin film due to the gradual relaxation of large misfit strain with increasing thickness, yielding a robust flexoelectric polarization pointing to the heterostructure surface. In contrast, the LFO is almost fully strained on a SrTiO3 substrate due to the small lattice mismatch. The flexoelectric polarization results in an increase in surface potential in the LFO heterostructure due to the incomplete screening of positive polarization bound charges, as observed by scanning kelvin probe microscopy. Furthermore, x-ray photoelectron spectroscopy reveals that the flexoelectric polarization can downward bend the band alignment of the LFO layer and modulate the interfacial potential barriers. These results provide the way for experimental observations of the flexoelectric effect and deliver physical insight into deep understanding of interfacial electronic structures of flexoelectric-based devices.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0114272</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-7362-6499</orcidid><orcidid>https://orcid.org/0000-0001-5026-6585</orcidid><orcidid>https://orcid.org/0000-0002-8499-9725</orcidid></addata></record> |
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subjects | Applied physics Comparative studies Heterostructures Photoelectric effect Photoelectrons Polarization Potential barriers Substrates Thin films |
title | Effects of flexoelectric polarization on surface potential of dielectric thin-film heterostructures: A comparative study |
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