Structural and piezoelectric properties of AlN thin films grown by pressure gradient sputtering
Aluminum nitride (AlN) thin films were grown by pressure gradient sputtering (PGS) and conventional sputtering methods. A pressure gradient with low pressure at a substrate position was measured only in the PGS method. AlN films highly oriented along the c -axis were grown by both methods, but there...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2023-01, Vol.62 (SA), p.SA1003 |
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| container_issue | SA |
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| container_title | Japanese Journal of Applied Physics |
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| creator | Terai, Yoshikazu Haraguchi, Kengo Ichinose, Ryo Oota, Hiroki Yonezawa, Ken |
| description | Aluminum nitride (AlN) thin films were grown by pressure gradient sputtering (PGS) and conventional sputtering methods. A pressure gradient with low pressure at a substrate position was measured only in the PGS method. AlN films highly oriented along the
c
-axis were grown by both methods, but there were remarkable differences in the surface roughness and the piezoelectric properties. The average surface roughness (Ra) obtained by atomic force microscopy images was much smaller in the AlN grown by the PGS method. The piezoelectric constant (
d
33
) of the AlN grown by the PGS method was higher than that of the conventional method. These results revealed that the PGS technique has an advantage in the growth of AlN films that are highly
c
-axis oriented with a single dielectric domain. |
| doi_str_mv | 10.35848/1347-4065/ac762f |
| format | Article |
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c
-axis were grown by both methods, but there were remarkable differences in the surface roughness and the piezoelectric properties. The average surface roughness (Ra) obtained by atomic force microscopy images was much smaller in the AlN grown by the PGS method. The piezoelectric constant (
d
33
) of the AlN grown by the PGS method was higher than that of the conventional method. These results revealed that the PGS technique has an advantage in the growth of AlN films that are highly
c
-axis oriented with a single dielectric domain.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.35848/1347-4065/ac762f</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>Tokyo: IOP Publishing</publisher><subject>AlN ; Aluminum nitride ; Low pressure ; PGS ; piezoelectric properties ; Piezoelectricity ; Position measurement ; Sputtering ; Substrates ; Surface roughness ; Thin films</subject><ispartof>Japanese Journal of Applied Physics, 2023-01, Vol.62 (SA), p.SA1003</ispartof><rights>2022 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c388t-a7254b54e464add7c22c720a7e7f0654565a87be8163ecdb1b89d4a015e743513</citedby><cites>FETCH-LOGICAL-c388t-a7254b54e464add7c22c720a7e7f0654565a87be8163ecdb1b89d4a015e743513</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.35848/1347-4065/ac762f/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27923,27924,53845,53892</link.rule.ids></links><search><creatorcontrib>Terai, Yoshikazu</creatorcontrib><creatorcontrib>Haraguchi, Kengo</creatorcontrib><creatorcontrib>Ichinose, Ryo</creatorcontrib><creatorcontrib>Oota, Hiroki</creatorcontrib><creatorcontrib>Yonezawa, Ken</creatorcontrib><title>Structural and piezoelectric properties of AlN thin films grown by pressure gradient sputtering</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>Aluminum nitride (AlN) thin films were grown by pressure gradient sputtering (PGS) and conventional sputtering methods. A pressure gradient with low pressure at a substrate position was measured only in the PGS method. AlN films highly oriented along the
c
-axis were grown by both methods, but there were remarkable differences in the surface roughness and the piezoelectric properties. The average surface roughness (Ra) obtained by atomic force microscopy images was much smaller in the AlN grown by the PGS method. The piezoelectric constant (
d
33
) of the AlN grown by the PGS method was higher than that of the conventional method. These results revealed that the PGS technique has an advantage in the growth of AlN films that are highly
c
-axis oriented with a single dielectric domain.</description><subject>AlN</subject><subject>Aluminum nitride</subject><subject>Low pressure</subject><subject>PGS</subject><subject>piezoelectric properties</subject><subject>Piezoelectricity</subject><subject>Position measurement</subject><subject>Sputtering</subject><subject>Substrates</subject><subject>Surface roughness</subject><subject>Thin films</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LxDAQhoMouK7-AG8BTx7qJmk-usdl8QtED6vnkKbTNUu3rUmKrL_erBW9KAwMMzzzzsyL0DklV7koeDGjOVcZJ1LMjFWS1Qdo8tM6RBNCGM34nLFjdBLCJpVScDpBehX9YOPgTYNNW-HewUcHDdjoncW973rw0UHAXY0XzSOOr67FtWu2Aa99997icpcoCGHwkDqmctBGHPohRvCuXZ-io9o0Ac6-8xS93Fw_L--yh6fb--XiIbN5UcTMKCZ4KThwyU1VKcuYVYwYBapOD3AhhSlUCQWVOdiqpGUxr7ghVIDiuaD5FF2MuunktwFC1Jtu8G1aqZnKhRCSsXmi6EhZ34Xgoda9d1vjd5oS_eWj3pum96bp0cc0cznOuK7_Fd1sTK8l06tFCkpIrvtqz2Z_sP9rfwKZK4NR</recordid><startdate>20230101</startdate><enddate>20230101</enddate><creator>Terai, Yoshikazu</creator><creator>Haraguchi, Kengo</creator><creator>Ichinose, Ryo</creator><creator>Oota, Hiroki</creator><creator>Yonezawa, Ken</creator><general>IOP Publishing</general><general>Japanese Journal of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20230101</creationdate><title>Structural and piezoelectric properties of AlN thin films grown by pressure gradient sputtering</title><author>Terai, Yoshikazu ; Haraguchi, Kengo ; Ichinose, Ryo ; Oota, Hiroki ; Yonezawa, Ken</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c388t-a7254b54e464add7c22c720a7e7f0654565a87be8163ecdb1b89d4a015e743513</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>AlN</topic><topic>Aluminum nitride</topic><topic>Low pressure</topic><topic>PGS</topic><topic>piezoelectric properties</topic><topic>Piezoelectricity</topic><topic>Position measurement</topic><topic>Sputtering</topic><topic>Substrates</topic><topic>Surface roughness</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Terai, Yoshikazu</creatorcontrib><creatorcontrib>Haraguchi, Kengo</creatorcontrib><creatorcontrib>Ichinose, Ryo</creatorcontrib><creatorcontrib>Oota, Hiroki</creatorcontrib><creatorcontrib>Yonezawa, Ken</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Terai, Yoshikazu</au><au>Haraguchi, Kengo</au><au>Ichinose, Ryo</au><au>Oota, Hiroki</au><au>Yonezawa, Ken</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structural and piezoelectric properties of AlN thin films grown by pressure gradient sputtering</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2023-01-01</date><risdate>2023</risdate><volume>62</volume><issue>SA</issue><spage>SA1003</spage><pages>SA1003-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>Aluminum nitride (AlN) thin films were grown by pressure gradient sputtering (PGS) and conventional sputtering methods. A pressure gradient with low pressure at a substrate position was measured only in the PGS method. AlN films highly oriented along the
c
-axis were grown by both methods, but there were remarkable differences in the surface roughness and the piezoelectric properties. The average surface roughness (Ra) obtained by atomic force microscopy images was much smaller in the AlN grown by the PGS method. The piezoelectric constant (
d
33
) of the AlN grown by the PGS method was higher than that of the conventional method. These results revealed that the PGS technique has an advantage in the growth of AlN films that are highly
c
-axis oriented with a single dielectric domain.</abstract><cop>Tokyo</cop><pub>IOP Publishing</pub><doi>10.35848/1347-4065/ac762f</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | AlN Aluminum nitride Low pressure PGS piezoelectric properties Piezoelectricity Position measurement Sputtering Substrates Surface roughness Thin films |
| title | Structural and piezoelectric properties of AlN thin films grown by pressure gradient sputtering |
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