Overcoming metal-rich surface chemistry limitations of ScAlN for high electrical performance heterostructures

While metal-rich ScAlN epitaxy has traditionally led to mixed phase films by controlling the surface chemistry with transient metal doses utilizing a pulsed method of molecular beam epitaxy, phase-pure, metal-rich epitaxy of ScAlN was demonstrated, showing improved structural and electrical characte...

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Veröffentlicht in:	Journal of applied physics 2022-11, Vol.132 (18)
Hauptverfasser:	Engel, Zachary, Motoki, Keisuke, Matthews, Christopher M., Doolittle, W. Alan
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Figure of merit Heterostructures High electron mobility transistors Molecular beam epitaxy Semiconductor devices Substrates Surface chemistry Surface roughness
Online-Zugang:	Volltext
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