The effects of deposition manner and rate on structure and morphology of porous ZnSe nanolayers: Modification of Phonon Confinement Model for resonant Raman conditions
Nanolayers of porous ZnSe with thickness of ∼50 nm were prepared by thermal vacuum evaporation, applying continuous and periodically interrupted deposition at different deposition rates. The surface morphology and film composition are studied by SEM and EDS methods. The XRD and Raman scattering meas...
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Veröffentlicht in: | Journal of alloys and compounds 2022-12, Vol.927, p.166942, Article 166942 |
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Sprache: | eng |
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Zusammenfassung: | Nanolayers of porous ZnSe with thickness of ∼50 nm were prepared by thermal vacuum evaporation, applying continuous and periodically interrupted deposition at different deposition rates. The surface morphology and film composition are studied by SEM and EDS methods. The XRD and Raman scattering measurements are used to confirm zinc blende ZnSe crystal structure. The Phonon confinement model is modified to analyze the Raman spectra excited by different laser lines both in non-resonant and near-resonant conditions. This analysis provides more profound insight in the ZnSe layers composition, nanocrystallite size and crystal lattice strain. The Raman results are also supported by the spectroscopic ellipsometry regarding the energy gap and porous properties of ZnSe layers. This study shows that both manner and rate of deposition significantly affect the nanolayers structure, morphology and optical properties and provide preparation of films with properties suitable for application which requires specific porous parameters important for the films chemical sensitivity.
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•Porous zinc-blende ZnSe single nanolayers prepared by thermal vacuum evaporation.•Continuous and periodically interrupted depositions at different deposition rates.•Raman spectra collected under non-resonant and near-resonant conditions.•PCM modified to analyze ZnSe composition, nanocrystallite size and lattice strain.•Deposition conditions affect porosity, lattice parameter, crystallite size, bandgap. |
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ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2022.166942 |