Simulation modelling of III-nitride/β-Ga2O3 HEMT for emerging high-power nanoelectronics applications
In this work, a recessed gate AlGaN/AlN/GaN HEMT (high electron mobility transistor) on β-Ga 2 O 3 substrate is proposed using a field-plate mechanism and compared with a recessed gate structure (recessed depth of 25 nm, 30 nm, and 35 nm) without field-plate. The device is optimized and analysed to...
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Veröffentlicht in: | Journal of the Korean Physical Society 2022-11, Vol.81 (9), p.876-884 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this work, a recessed gate AlGaN/AlN/GaN HEMT (high electron mobility transistor) on β-Ga
2
O
3
substrate is proposed using a field-plate mechanism and compared with a recessed gate structure (recessed depth of 25 nm, 30 nm, and 35 nm) without field-plate. The device is optimized and analysed to obtain diminished leakage current (10
−16
A/mm), R
ON
(1.27
Ω
-mm), PFOM (power figure of merit) (4373 MW/cm
3
), breakdown voltage (108 V), and excellent DC characteristics using Atlas TCAD. It is observed that the obtained results are better than those reported in recent studies. These R
ON
and PFOM demonstrate that the suggested device structure on the preferred β-Ga
2
O
3
substrate is an excellent contender for future high-power nanoelectronics applications. |
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ISSN: | 0374-4884 1976-8524 |
DOI: | 10.1007/s40042-022-00603-x |