Impact of various pulse-bases on charge boost in ferroelectric capacitors
To fully understand the electrical characteristics of ferroelectric field-effect transistor (especially, sub-60-mV/decade switching characteristics at 300 K), it is necessary to quantitatively figure out the physics of the negative capacitance in ferroelectric material. In this work, metal-ferroelec...
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| Veröffentlicht in: | IEEE electron device letters 2022-11, Vol.43 (11), p.1-1 |
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| creator | Kim, Gwon Lim, Jaehyuk Eom, Deokjoon Choi, Yejoo Kim, Hyoungsub Shin, Changhwan |
| description | To fully understand the electrical characteristics of ferroelectric field-effect transistor (especially, sub-60-mV/decade switching characteristics at 300 K), it is necessary to quantitatively figure out the physics of the negative capacitance in ferroelectric material. In this work, metal-ferroelectric-metal (MFM) and metal-insulator-ferroelectric-metal (MIFM) capacitors were fabricated with Hf 0.5 Zr 0.5 O 2 (HZO) and HfO 2 /HZO, respectively. For various bases of the input voltage pulse across the capacitors, the charge released during the falling edge of the pulse (Q D ) was measured. In reality, for the given bases of the input voltage pulse, the charge (Q D ) boost in the ferroelectric capacitors was experimentally observed without intentionally applying imprint, as done in the prior work. It turned out that, even though the MIFM capacitor's capacitance is lower than a fixed-value capacitor's capacitance, Q D of the MIFM capacitor was comparable to Q D of the fixed-value capacitor. This clearly indicates that the charge (Q D ) was boosted by the negative capacitance in the ferroelectric material. |
| doi_str_mv | 10.1109/LED.2022.3208263 |
| format | Article |
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In this work, metal-ferroelectric-metal (MFM) and metal-insulator-ferroelectric-metal (MIFM) capacitors were fabricated with Hf 0.5 Zr 0.5 O 2 (HZO) and HfO 2 /HZO, respectively. For various bases of the input voltage pulse across the capacitors, the charge released during the falling edge of the pulse (Q D ) was measured. In reality, for the given bases of the input voltage pulse, the charge (Q D ) boost in the ferroelectric capacitors was experimentally observed without intentionally applying imprint, as done in the prior work. It turned out that, even though the MIFM capacitor's capacitance is lower than a fixed-value capacitor's capacitance, Q D of the MIFM capacitor was comparable to Q D of the fixed-value capacitor. This clearly indicates that the charge (Q D ) was boosted by the negative capacitance in the ferroelectric material.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2022.3208263</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Capacitance ; Capacitors ; Charge boost ; Charge measurement ; Electric potential ; Ferroelectric materials ; Ferroelectricity ; Field effect transistors ; Insulators ; Metal–ferroelectric–metal (MFM) capacitor ; Metal–insulator–ferroelectric–metal (MIFM) capacitor ; Negative capacitance (NC) ; Pulse measurements ; Q measurement ; Semiconductor devices ; Switches ; Voltage ; Voltage measurement</subject><ispartof>IEEE electron device letters, 2022-11, Vol.43 (11), p.1-1</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c174t-730ddeeb22054c0cdb67d977e3dd465669f4ff2802464dd60e7edb804a7007f03</cites><orcidid>0000-0001-6057-3773 ; 0000-0002-5473-3088 ; 0000-0003-3549-4250 ; 0000-0003-1636-8865 ; 0000-0002-5488-9314</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9896820$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9896820$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kim, Gwon</creatorcontrib><creatorcontrib>Lim, Jaehyuk</creatorcontrib><creatorcontrib>Eom, Deokjoon</creatorcontrib><creatorcontrib>Choi, Yejoo</creatorcontrib><creatorcontrib>Kim, Hyoungsub</creatorcontrib><creatorcontrib>Shin, Changhwan</creatorcontrib><title>Impact of various pulse-bases on charge boost in ferroelectric capacitors</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>To fully understand the electrical characteristics of ferroelectric field-effect transistor (especially, sub-60-mV/decade switching characteristics at 300 K), it is necessary to quantitatively figure out the physics of the negative capacitance in ferroelectric material. In this work, metal-ferroelectric-metal (MFM) and metal-insulator-ferroelectric-metal (MIFM) capacitors were fabricated with Hf 0.5 Zr 0.5 O 2 (HZO) and HfO 2 /HZO, respectively. For various bases of the input voltage pulse across the capacitors, the charge released during the falling edge of the pulse (Q D ) was measured. In reality, for the given bases of the input voltage pulse, the charge (Q D ) boost in the ferroelectric capacitors was experimentally observed without intentionally applying imprint, as done in the prior work. It turned out that, even though the MIFM capacitor's capacitance is lower than a fixed-value capacitor's capacitance, Q D of the MIFM capacitor was comparable to Q D of the fixed-value capacitor. This clearly indicates that the charge (Q D ) was boosted by the negative capacitance in the ferroelectric material.</description><subject>Capacitance</subject><subject>Capacitors</subject><subject>Charge boost</subject><subject>Charge measurement</subject><subject>Electric potential</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Field effect transistors</subject><subject>Insulators</subject><subject>Metal–ferroelectric–metal (MFM) capacitor</subject><subject>Metal–insulator–ferroelectric–metal (MIFM) capacitor</subject><subject>Negative capacitance (NC)</subject><subject>Pulse measurements</subject><subject>Q measurement</subject><subject>Semiconductor devices</subject><subject>Switches</subject><subject>Voltage</subject><subject>Voltage measurement</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM9LwzAUx4MoOKd3wUvAc-fLjybtUebUwsCLnkOavGjHttSkFfzv7djw9C6fz_fBh5BbBgvGoH5Yr54WHDhfCA4VV-KMzFhZVgWUSpyTGWjJCsFAXZKrnDcATEotZ6Rpdr11A42B_tjUxTHTftxmLFqbMdO4p-7Lpk-kbYx5oN2eBkwp4hbdkDpHnZ30bogpX5OLYCfz5nTn5ON59b58LdZvL83ycV04puVQaAHeI7acQykdON8q7WutUXgvValUHWQIvAIulfReAWr0bQXSagAdQMzJ_XG3T_F7xDyYTRzTfnppuOZVqUFDPVFwpFyKOScMpk_dzqZfw8AcgpkpmDkEM6dgk3J3VDpE_MfrqlYVB_EHCANmYA</recordid><startdate>20221101</startdate><enddate>20221101</enddate><creator>Kim, Gwon</creator><creator>Lim, Jaehyuk</creator><creator>Eom, Deokjoon</creator><creator>Choi, Yejoo</creator><creator>Kim, Hyoungsub</creator><creator>Shin, Changhwan</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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In this work, metal-ferroelectric-metal (MFM) and metal-insulator-ferroelectric-metal (MIFM) capacitors were fabricated with Hf 0.5 Zr 0.5 O 2 (HZO) and HfO 2 /HZO, respectively. For various bases of the input voltage pulse across the capacitors, the charge released during the falling edge of the pulse (Q D ) was measured. In reality, for the given bases of the input voltage pulse, the charge (Q D ) boost in the ferroelectric capacitors was experimentally observed without intentionally applying imprint, as done in the prior work. It turned out that, even though the MIFM capacitor's capacitance is lower than a fixed-value capacitor's capacitance, Q D of the MIFM capacitor was comparable to Q D of the fixed-value capacitor. 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| subjects | Capacitance Capacitors Charge boost Charge measurement Electric potential Ferroelectric materials Ferroelectricity Field effect transistors Insulators Metal–ferroelectric–metal (MFM) capacitor Metal–insulator–ferroelectric–metal (MIFM) capacitor Negative capacitance (NC) Pulse measurements Q measurement Semiconductor devices Switches Voltage Voltage measurement |
| title | Impact of various pulse-bases on charge boost in ferroelectric capacitors |
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