Fabrication of Schottky-Barrier-Oxide-Semiconductor Thin-film Transistors Via a Simple Aluminum Reaction Method

In this work, we proposed a simple method for fabricating Schottky-barrier thin-film transistors (TFTs) with tailorable device characteristics. Through a simple post annealing process, an AlO x interlayer was formed between Cu/Al source/drain electrodes and the amorphous indium gallium zinc oxide (I...

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Veröffentlicht in:	IEEE electron device letters 2022-11, Vol.43 (11), p.1-1
Hauptverfasser:	Hu, Shiben, Zhou, Yue, Li, Yuzhi, Li, Changhao, Pang, Chao, Ning, Honglong, Yao, Rihui, Peng, Junbiao, Gong, Zheng
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Aluminum Reaction Behavioral sciences Carrier injection Contact resistance Copper Electrodes Gallium Indium gallium zinc oxide Interlayers Logic gates Schottky Barrier Semiconductor devices Sputtering TFTs Thickness Thin film transistors Transistors Voltage Zinc oxide
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