Breakdown Voltage Enhancement of Vertical Diamond Schottky Barrier Diode With Annealing Method and AlO Field Plate Structure
We proposed a simple method to enhance the breakdown voltage (BV) and reduce the turn-on voltage (VON) for diamond vertical Schottky barrier diode (SBD) with Al2O3 field plate (FP) structure. The Al2O3 was deposited by atomic layer deposition at 200 °C. Ti/Pt/Au and Zr/Ni/Au metal stacks were used a...
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| Veröffentlicht in: | IEEE electron device letters 2022-11, Vol.43 (11), p.1937-1940 |
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| container_end_page | 1940 |
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| container_issue | 11 |
| container_start_page | 1937 |
| container_title | IEEE electron device letters |
| container_volume | 43 |
| creator | Li, Qi Wang, Juan Shao, Guoqing Chen, Genqiang He, Shi Zhang, Qianwen Zhang, Shumiao Wang, Ruozheng Fan, Shuwei Wang, Hong-Xing |
| description | We proposed a simple method to enhance the breakdown voltage (BV) and reduce the turn-on voltage (VON) for diamond vertical Schottky barrier diode (SBD) with Al2O3 field plate (FP) structure. The Al2O3 was deposited by atomic layer deposition at 200 °C. Ti/Pt/Au and Zr/Ni/Au metal stacks were used as ohmic and Schottky electrodes, respectively. Then, this FP terminated SBD was annealed at 400 °C to improve Al2O3 quality and lower Schottky barrier height. The ideality factor and Schottky barrier height are 1.60 and 1.42 eV, respectively. Compared with regular diamond SBD, the BV of annealed diamond SBD was enhanced from 162 V to 386 V with an increasement of 138%, and the VON was decreased from −2.30 to −1.65 V. This method is potential for the development of diamond power devices. |
| doi_str_mv | 10.1109/LED.2022.3210511 |
| format | Article |
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The Al2O3 was deposited by atomic layer deposition at 200 °C. Ti/Pt/Au and Zr/Ni/Au metal stacks were used as ohmic and Schottky electrodes, respectively. Then, this FP terminated SBD was annealed at 400 °C to improve Al2O3 quality and lower Schottky barrier height. The ideality factor and Schottky barrier height are 1.60 and 1.42 eV, respectively. Compared with regular diamond SBD, the BV of annealed diamond SBD was enhanced from 162 V to 386 V with an increasement of 138%, and the VON was decreased from −2.30 to −1.65 V. This method is potential for the development of diamond power devices.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2022.3210511</identifier><language>eng</language><publisher>New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</publisher><subject>Aluminum oxide ; Annealing ; Atomic layer epitaxy ; Breakdown ; Diamonds ; Electric potential ; Electronic devices ; Gold ; Schottky diodes ; Titanium ; Voltage ; Zirconium</subject><ispartof>IEEE electron device letters, 2022-11, Vol.43 (11), p.1937-1940</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1165-db8bc23252c485f2e20718ba062494a19484c2e0c4116bd797164f7911db8e8f3</citedby><cites>FETCH-LOGICAL-c1165-db8bc23252c485f2e20718ba062494a19484c2e0c4116bd797164f7911db8e8f3</cites><orcidid>0000-0002-5582-3173 ; 0000-0002-8110-1027 ; 0000-0002-8831-640X ; 0000-0003-2237-6693 ; 0000-0002-2883-0765</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27928,27929</link.rule.ids></links><search><creatorcontrib>Li, Qi</creatorcontrib><creatorcontrib>Wang, Juan</creatorcontrib><creatorcontrib>Shao, Guoqing</creatorcontrib><creatorcontrib>Chen, Genqiang</creatorcontrib><creatorcontrib>He, Shi</creatorcontrib><creatorcontrib>Zhang, Qianwen</creatorcontrib><creatorcontrib>Zhang, Shumiao</creatorcontrib><creatorcontrib>Wang, Ruozheng</creatorcontrib><creatorcontrib>Fan, Shuwei</creatorcontrib><creatorcontrib>Wang, Hong-Xing</creatorcontrib><title>Breakdown Voltage Enhancement of Vertical Diamond Schottky Barrier Diode With Annealing Method and AlO Field Plate Structure</title><title>IEEE electron device letters</title><description>We proposed a simple method to enhance the breakdown voltage (BV) and reduce the turn-on voltage (VON) for diamond vertical Schottky barrier diode (SBD) with Al2O3 field plate (FP) structure. The Al2O3 was deposited by atomic layer deposition at 200 °C. Ti/Pt/Au and Zr/Ni/Au metal stacks were used as ohmic and Schottky electrodes, respectively. Then, this FP terminated SBD was annealed at 400 °C to improve Al2O3 quality and lower Schottky barrier height. The ideality factor and Schottky barrier height are 1.60 and 1.42 eV, respectively. Compared with regular diamond SBD, the BV of annealed diamond SBD was enhanced from 162 V to 386 V with an increasement of 138%, and the VON was decreased from −2.30 to −1.65 V. This method is potential for the development of diamond power devices.</description><subject>Aluminum oxide</subject><subject>Annealing</subject><subject>Atomic layer epitaxy</subject><subject>Breakdown</subject><subject>Diamonds</subject><subject>Electric potential</subject><subject>Electronic devices</subject><subject>Gold</subject><subject>Schottky diodes</subject><subject>Titanium</subject><subject>Voltage</subject><subject>Zirconium</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNotkMtOwzAQRS0EEqWwZ2mJdYrHsfNY9glIRUUqlGXkOJM2bWoXxxGqxMeTql3N4p57RzqEPAIbALD0eT6dDDjjfBByYBLgivRAyiRgMgqvSY_FAoIQWHRL7ppmyxgIEYse-Rs5VLvC_hq6srVXa6RTs1FG4x6Np7akK3S-0qqmk0rtrSnoUm-s97sjHSnnKnRdYAuk35Xf0KExqOrKrOk7-o0tqOoKw3pBZxXWBf2olUe69K7VvnV4T25KVTf4cLl98jWbfo5fg_ni5W08nAcaIJJBkSe55iGXXItElhw5iyHJFYu4SIWCVCRCc2RadHhexGkMkSjjFKBrYlKGffJ03j04-9Ni47OtbZ3pXmY85omMmQxlR7EzpZ1tGodldnDVXrljBiw7Oc46x9nJcXZxHP4D0WluIQ</recordid><startdate>202211</startdate><enddate>202211</enddate><creator>Li, Qi</creator><creator>Wang, Juan</creator><creator>Shao, Guoqing</creator><creator>Chen, Genqiang</creator><creator>He, Shi</creator><creator>Zhang, Qianwen</creator><creator>Zhang, Shumiao</creator><creator>Wang, Ruozheng</creator><creator>Fan, Shuwei</creator><creator>Wang, Hong-Xing</creator><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-5582-3173</orcidid><orcidid>https://orcid.org/0000-0002-8110-1027</orcidid><orcidid>https://orcid.org/0000-0002-8831-640X</orcidid><orcidid>https://orcid.org/0000-0003-2237-6693</orcidid><orcidid>https://orcid.org/0000-0002-2883-0765</orcidid></search><sort><creationdate>202211</creationdate><title>Breakdown Voltage Enhancement of Vertical Diamond Schottky Barrier Diode With Annealing Method and AlO Field Plate Structure</title><author>Li, Qi ; Wang, Juan ; Shao, Guoqing ; Chen, Genqiang ; He, Shi ; Zhang, Qianwen ; Zhang, Shumiao ; Wang, Ruozheng ; Fan, Shuwei ; Wang, Hong-Xing</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1165-db8bc23252c485f2e20718ba062494a19484c2e0c4116bd797164f7911db8e8f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Aluminum oxide</topic><topic>Annealing</topic><topic>Atomic layer epitaxy</topic><topic>Breakdown</topic><topic>Diamonds</topic><topic>Electric potential</topic><topic>Electronic devices</topic><topic>Gold</topic><topic>Schottky diodes</topic><topic>Titanium</topic><topic>Voltage</topic><topic>Zirconium</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Qi</creatorcontrib><creatorcontrib>Wang, Juan</creatorcontrib><creatorcontrib>Shao, Guoqing</creatorcontrib><creatorcontrib>Chen, Genqiang</creatorcontrib><creatorcontrib>He, Shi</creatorcontrib><creatorcontrib>Zhang, Qianwen</creatorcontrib><creatorcontrib>Zhang, Shumiao</creatorcontrib><creatorcontrib>Wang, Ruozheng</creatorcontrib><creatorcontrib>Fan, Shuwei</creatorcontrib><creatorcontrib>Wang, Hong-Xing</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Qi</au><au>Wang, Juan</au><au>Shao, Guoqing</au><au>Chen, Genqiang</au><au>He, Shi</au><au>Zhang, Qianwen</au><au>Zhang, Shumiao</au><au>Wang, Ruozheng</au><au>Fan, Shuwei</au><au>Wang, Hong-Xing</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Breakdown Voltage Enhancement of Vertical Diamond Schottky Barrier Diode With Annealing Method and AlO Field Plate Structure</atitle><jtitle>IEEE electron device letters</jtitle><date>2022-11</date><risdate>2022</risdate><volume>43</volume><issue>11</issue><spage>1937</spage><epage>1940</epage><pages>1937-1940</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><abstract>We proposed a simple method to enhance the breakdown voltage (BV) and reduce the turn-on voltage (VON) for diamond vertical Schottky barrier diode (SBD) with Al2O3 field plate (FP) structure. The Al2O3 was deposited by atomic layer deposition at 200 °C. Ti/Pt/Au and Zr/Ni/Au metal stacks were used as ohmic and Schottky electrodes, respectively. Then, this FP terminated SBD was annealed at 400 °C to improve Al2O3 quality and lower Schottky barrier height. The ideality factor and Schottky barrier height are 1.60 and 1.42 eV, respectively. Compared with regular diamond SBD, the BV of annealed diamond SBD was enhanced from 162 V to 386 V with an increasement of 138%, and the VON was decreased from −2.30 to −1.65 V. This method is potential for the development of diamond power devices.</abstract><cop>New York</cop><pub>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</pub><doi>10.1109/LED.2022.3210511</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-5582-3173</orcidid><orcidid>https://orcid.org/0000-0002-8110-1027</orcidid><orcidid>https://orcid.org/0000-0002-8831-640X</orcidid><orcidid>https://orcid.org/0000-0003-2237-6693</orcidid><orcidid>https://orcid.org/0000-0002-2883-0765</orcidid></addata></record> |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Aluminum oxide Annealing Atomic layer epitaxy Breakdown Diamonds Electric potential Electronic devices Gold Schottky diodes Titanium Voltage Zirconium |
| title | Breakdown Voltage Enhancement of Vertical Diamond Schottky Barrier Diode With Annealing Method and AlO Field Plate Structure |
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