GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform
A study of GaN for high temperature (HT, up to 500 °C) digital circuits was conducted. A HT-robust GaN-on-Si technology based on enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) and depletion-mode AlGaN/GaN HEMTs was proposed and used to implement different digital ci...
Gespeichert in:
| Veröffentlicht in: | IEEE electron device letters 2022-11, Vol.43 (11), p.1-1 |
|---|---|
| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1 |
|---|---|
| container_issue | 11 |
| container_start_page | 1 |
| container_title | IEEE electron device letters |
| container_volume | 43 |
| creator | Yuan, Mengyang Xie, Qingyun Fu, Kai Hossain, Toiyob Niroula, John Greer, James A. Chowdhury, Nadim Zhao, Yuji Palacios, Tomas |
| description | A study of GaN for high temperature (HT, up to 500 °C) digital circuits was conducted. A HT-robust GaN-on-Si technology based on enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) and depletion-mode AlGaN/GaN HEMTs was proposed and used to implement different digital circuit configurations, namely E/D-mode and E/E-mode (E: enhancement, D: depletion). The E/D-mode inverter was found to offer significantly better performance in terms of voltage swing, noise margin, and gain, across temperature and V DD scaling. As calculated from E/D-mode ring oscillators (ROs) with L G = 2 μm, a RO exhibited a propagation delay (t p ) of < 1.48 ns/stage at 500 °C. The best RO achieved t p < 0.18 ns/stage at 25 °C. To the best of the authors' knowledge, the proposed technology sets a new boundary of t p vs. L G in wide band gap digital logic, and is operational at the highest reported temperature (500 °C) of a GaN digital circuit. The results reflect the promising potential of the proposed technology for emerging HT applications at 500 °C and beyond. |
| doi_str_mv | 10.1109/LED.2022.3204566 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_2728570411</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9878116</ieee_id><sourcerecordid>2728570411</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-21425ea3e7bd2a32d75d68a1cea2aac40f14da092fbd6ddc4c2b8cb80b004aee3</originalsourceid><addsrcrecordid>eNo9kM1KAzEURoMoWKt7wU3A9dR7M8n8LLXWWihW_FmHO0lGpkwnNZkufCufwSdzSsXV3ZzzcTmMXSJMEKG8Wc7uJwKEmKQCpMqyIzZCpYoEVJYesxHkEpMUITtlZzGuAVDKXI7YYk5P_KXpPvgqmqZtqfch8tXWBeob31HLqecKgP98T_kdRWe57zjxQUt8l7w2_Hlwah825-ykpja6i787Zu8Ps7fpY7JczRfT22ViRIl9IlAK5Sh1eWUFpcLmymYFoXEkiIyEGqUlKEVd2cxaI42oClMVUAFIci4ds-vD7jb4z52LvV77XRg-jVrkolA5SMSBggNlgo8xuFpvQ7Oh8KUR9D6YHoLpfTD9F2xQrg5K45z7x8siLxCz9BeFgWVn</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2728570411</pqid></control><display><type>article</type><title>GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform</title><source>IEEE Electronic Library (IEL)</source><creator>Yuan, Mengyang ; Xie, Qingyun ; Fu, Kai ; Hossain, Toiyob ; Niroula, John ; Greer, James A. ; Chowdhury, Nadim ; Zhao, Yuji ; Palacios, Tomas</creator><creatorcontrib>Yuan, Mengyang ; Xie, Qingyun ; Fu, Kai ; Hossain, Toiyob ; Niroula, John ; Greer, James A. ; Chowdhury, Nadim ; Zhao, Yuji ; Palacios, Tomas</creatorcontrib><description>A study of GaN for high temperature (HT, up to 500 °C) digital circuits was conducted. A HT-robust GaN-on-Si technology based on enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) and depletion-mode AlGaN/GaN HEMTs was proposed and used to implement different digital circuit configurations, namely E/D-mode and E/E-mode (E: enhancement, D: depletion). The E/D-mode inverter was found to offer significantly better performance in terms of voltage swing, noise margin, and gain, across temperature and V DD scaling. As calculated from E/D-mode ring oscillators (ROs) with L G = 2 μm, a RO exhibited a propagation delay (t p ) of < 1.48 ns/stage at 500 °C. The best RO achieved t p < 0.18 ns/stage at 25 °C. To the best of the authors' knowledge, the proposed technology sets a new boundary of t p vs. L G in wide band gap digital logic, and is operational at the highest reported temperature (500 °C) of a GaN digital circuit. The results reflect the promising potential of the proposed technology for emerging HT applications at 500 °C and beyond.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2022.3204566</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Aluminum gallium nitride ; Aluminum gallium nitrides ; Depletion ; Digital circuits ; Digital electronics ; E/D-mode ; E/E-mode ; Gallium nitrides ; GaN ; HEMTs ; High electron mobility transistors ; High temperature ; Inverters ; MODFETs ; Oscillators ; p-GaN-gate ; propagation delay ; ring oscillator ; Semiconductor devices ; transistor ; Transistors ; Wide band gap semiconductors</subject><ispartof>IEEE electron device letters, 2022-11, Vol.43 (11), p.1-1</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-21425ea3e7bd2a32d75d68a1cea2aac40f14da092fbd6ddc4c2b8cb80b004aee3</citedby><cites>FETCH-LOGICAL-c291t-21425ea3e7bd2a32d75d68a1cea2aac40f14da092fbd6ddc4c2b8cb80b004aee3</cites><orcidid>0000-0002-2190-563X ; 0000-0002-8368-1440 ; 0000-0003-2615-7623 ; 0000-0003-4336-6267 ; 0000-0001-9199-4159 ; 0000-0002-3677-4556 ; 0000-0002-9405-7512</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9878116$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9878116$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yuan, Mengyang</creatorcontrib><creatorcontrib>Xie, Qingyun</creatorcontrib><creatorcontrib>Fu, Kai</creatorcontrib><creatorcontrib>Hossain, Toiyob</creatorcontrib><creatorcontrib>Niroula, John</creatorcontrib><creatorcontrib>Greer, James A.</creatorcontrib><creatorcontrib>Chowdhury, Nadim</creatorcontrib><creatorcontrib>Zhao, Yuji</creatorcontrib><creatorcontrib>Palacios, Tomas</creatorcontrib><title>GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>A study of GaN for high temperature (HT, up to 500 °C) digital circuits was conducted. A HT-robust GaN-on-Si technology based on enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) and depletion-mode AlGaN/GaN HEMTs was proposed and used to implement different digital circuit configurations, namely E/D-mode and E/E-mode (E: enhancement, D: depletion). The E/D-mode inverter was found to offer significantly better performance in terms of voltage swing, noise margin, and gain, across temperature and V DD scaling. As calculated from E/D-mode ring oscillators (ROs) with L G = 2 μm, a RO exhibited a propagation delay (t p ) of < 1.48 ns/stage at 500 °C. The best RO achieved t p < 0.18 ns/stage at 25 °C. To the best of the authors' knowledge, the proposed technology sets a new boundary of t p vs. L G in wide band gap digital logic, and is operational at the highest reported temperature (500 °C) of a GaN digital circuit. The results reflect the promising potential of the proposed technology for emerging HT applications at 500 °C and beyond.</description><subject>Aluminum gallium nitride</subject><subject>Aluminum gallium nitrides</subject><subject>Depletion</subject><subject>Digital circuits</subject><subject>Digital electronics</subject><subject>E/D-mode</subject><subject>E/E-mode</subject><subject>Gallium nitrides</subject><subject>GaN</subject><subject>HEMTs</subject><subject>High electron mobility transistors</subject><subject>High temperature</subject><subject>Inverters</subject><subject>MODFETs</subject><subject>Oscillators</subject><subject>p-GaN-gate</subject><subject>propagation delay</subject><subject>ring oscillator</subject><subject>Semiconductor devices</subject><subject>transistor</subject><subject>Transistors</subject><subject>Wide band gap semiconductors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM1KAzEURoMoWKt7wU3A9dR7M8n8LLXWWihW_FmHO0lGpkwnNZkufCufwSdzSsXV3ZzzcTmMXSJMEKG8Wc7uJwKEmKQCpMqyIzZCpYoEVJYesxHkEpMUITtlZzGuAVDKXI7YYk5P_KXpPvgqmqZtqfch8tXWBeob31HLqecKgP98T_kdRWe57zjxQUt8l7w2_Hlwah825-ykpja6i787Zu8Ps7fpY7JczRfT22ViRIl9IlAK5Sh1eWUFpcLmymYFoXEkiIyEGqUlKEVd2cxaI42oClMVUAFIci4ds-vD7jb4z52LvV77XRg-jVrkolA5SMSBggNlgo8xuFpvQ7Oh8KUR9D6YHoLpfTD9F2xQrg5K45z7x8siLxCz9BeFgWVn</recordid><startdate>20221101</startdate><enddate>20221101</enddate><creator>Yuan, Mengyang</creator><creator>Xie, Qingyun</creator><creator>Fu, Kai</creator><creator>Hossain, Toiyob</creator><creator>Niroula, John</creator><creator>Greer, James A.</creator><creator>Chowdhury, Nadim</creator><creator>Zhao, Yuji</creator><creator>Palacios, Tomas</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-2190-563X</orcidid><orcidid>https://orcid.org/0000-0002-8368-1440</orcidid><orcidid>https://orcid.org/0000-0003-2615-7623</orcidid><orcidid>https://orcid.org/0000-0003-4336-6267</orcidid><orcidid>https://orcid.org/0000-0001-9199-4159</orcidid><orcidid>https://orcid.org/0000-0002-3677-4556</orcidid><orcidid>https://orcid.org/0000-0002-9405-7512</orcidid></search><sort><creationdate>20221101</creationdate><title>GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform</title><author>Yuan, Mengyang ; Xie, Qingyun ; Fu, Kai ; Hossain, Toiyob ; Niroula, John ; Greer, James A. ; Chowdhury, Nadim ; Zhao, Yuji ; Palacios, Tomas</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-21425ea3e7bd2a32d75d68a1cea2aac40f14da092fbd6ddc4c2b8cb80b004aee3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Aluminum gallium nitride</topic><topic>Aluminum gallium nitrides</topic><topic>Depletion</topic><topic>Digital circuits</topic><topic>Digital electronics</topic><topic>E/D-mode</topic><topic>E/E-mode</topic><topic>Gallium nitrides</topic><topic>GaN</topic><topic>HEMTs</topic><topic>High electron mobility transistors</topic><topic>High temperature</topic><topic>Inverters</topic><topic>MODFETs</topic><topic>Oscillators</topic><topic>p-GaN-gate</topic><topic>propagation delay</topic><topic>ring oscillator</topic><topic>Semiconductor devices</topic><topic>transistor</topic><topic>Transistors</topic><topic>Wide band gap semiconductors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yuan, Mengyang</creatorcontrib><creatorcontrib>Xie, Qingyun</creatorcontrib><creatorcontrib>Fu, Kai</creatorcontrib><creatorcontrib>Hossain, Toiyob</creatorcontrib><creatorcontrib>Niroula, John</creatorcontrib><creatorcontrib>Greer, James A.</creatorcontrib><creatorcontrib>Chowdhury, Nadim</creatorcontrib><creatorcontrib>Zhao, Yuji</creatorcontrib><creatorcontrib>Palacios, Tomas</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yuan, Mengyang</au><au>Xie, Qingyun</au><au>Fu, Kai</au><au>Hossain, Toiyob</au><au>Niroula, John</au><au>Greer, James A.</au><au>Chowdhury, Nadim</au><au>Zhao, Yuji</au><au>Palacios, Tomas</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2022-11-01</date><risdate>2022</risdate><volume>43</volume><issue>11</issue><spage>1</spage><epage>1</epage><pages>1-1</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>A study of GaN for high temperature (HT, up to 500 °C) digital circuits was conducted. A HT-robust GaN-on-Si technology based on enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) and depletion-mode AlGaN/GaN HEMTs was proposed and used to implement different digital circuit configurations, namely E/D-mode and E/E-mode (E: enhancement, D: depletion). The E/D-mode inverter was found to offer significantly better performance in terms of voltage swing, noise margin, and gain, across temperature and V DD scaling. As calculated from E/D-mode ring oscillators (ROs) with L G = 2 μm, a RO exhibited a propagation delay (t p ) of < 1.48 ns/stage at 500 °C. The best RO achieved t p < 0.18 ns/stage at 25 °C. To the best of the authors' knowledge, the proposed technology sets a new boundary of t p vs. L G in wide band gap digital logic, and is operational at the highest reported temperature (500 °C) of a GaN digital circuit. The results reflect the promising potential of the proposed technology for emerging HT applications at 500 °C and beyond.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2022.3204566</doi><tpages>1</tpages><orcidid>https://orcid.org/0000-0002-2190-563X</orcidid><orcidid>https://orcid.org/0000-0002-8368-1440</orcidid><orcidid>https://orcid.org/0000-0003-2615-7623</orcidid><orcidid>https://orcid.org/0000-0003-4336-6267</orcidid><orcidid>https://orcid.org/0000-0001-9199-4159</orcidid><orcidid>https://orcid.org/0000-0002-3677-4556</orcidid><orcidid>https://orcid.org/0000-0002-9405-7512</orcidid></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2022-11, Vol.43 (11), p.1-1 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_journals_2728570411 |
| source | IEEE Electronic Library (IEL) |
| subjects | Aluminum gallium nitride Aluminum gallium nitrides Depletion Digital circuits Digital electronics E/D-mode E/E-mode Gallium nitrides GaN HEMTs High electron mobility transistors High temperature Inverters MODFETs Oscillators p-GaN-gate propagation delay ring oscillator Semiconductor devices transistor Transistors Wide band gap semiconductors |
| title | GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T12%3A29%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=GaN%20Ring%20Oscillators%20Operational%20at%20500%20%C2%B0C%20Based%20on%20a%20GaN-on-Si%20Platform&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Yuan,%20Mengyang&rft.date=2022-11-01&rft.volume=43&rft.issue=11&rft.spage=1&rft.epage=1&rft.pages=1-1&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2022.3204566&rft_dat=%3Cproquest_RIE%3E2728570411%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2728570411&rft_id=info:pmid/&rft_ieee_id=9878116&rfr_iscdi=true |