Nanoscale Stress Localization Effects on the Radiation Susceptibility of GaN High‐Mobility Transistors

Nanoscale localized mechanical stress fields develop unavoidably in microelectronic devices due to structural and processing aspects. Their global average is too small to influence bandgap or mobility, but it is proposed that stress localization can influence defect nucleation sites under radiation....

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Veröffentlicht in:	Physica status solidi. PSS-RRL. Rapid research letters 2022-08, Vol.16 (8), p.n/a
Hauptverfasser:	Rasel, Md Abu Jafar, Stepanoff, Sergei, Haque, Aman, Wolfe, Douglas E., Ren, Fan, Pearton, Stephen
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Carrier density Damage localization Electron diffraction gallium nitride Gallium nitrides gamma radiation effects Gamma rays High electron mobility transistors interface defects mechanical stress concentration Nucleation Radiation damage Semiconductor devices Stress distribution Tensile stress transmission electron microscopy
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