High output performance of piezoelectric energy harvesters using epitaxial Pb(Zr, Ti)O3 thin film grown on Si substrate

For a high power density in piezoelectric energy harvesters, both a large direct piezoelectric coefficient (e31,f) and a small relative permittivity constant (εr,33) are required. This study proposed an energy harvesting device made of an epitaxial Pb(Zr, Ti)O3 (PZT) thin film grown on a Si substrat...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2022-10, Vol.121 (16)
Hauptverfasser:	Kim, Eun-Ji, Kweon, Sang-Hyo, Nahm, Sahn, Sato, Yukio, Tan, Goon, Kanno, Isaku
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Energy harvesting Epitaxial growth Figure of merit Lead zirconate titanates Magnetron sputtering Permittivity Piezoelectricity Resonant frequencies Silicon substrates Thin films Zirconium
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!