37.1: Invited Paper: Nanosheet High Mobility SnO2‐SnO Complementary TFTs for System‐on‐Display and Monolithic Three‐Dimensional Integrated Circuit

The top‐gate 4.5‐nm‐thick SnO2 nanosheet nTFT has the high 136 cm2/Vs field‐effect mobility (μFE), sharp 1.5×108 on‐current/off‐current (ION/IOFF), and fast turn‐on subthreshold slope (SS) of 108 mV/decade. The top‐gate 7‐nm‐thick nanosheet SnO pTFT has a high μFE of 4.4 cm2/Vs, large ION/IOFF of 1....

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Veröffentlicht in:	SID International Symposium Digest of technical papers 2022-10, Vol.53 (S1), p.393-395
Hauptverfasser:	Chin, Albert, Yen, Te Jui, Gritsenko, Vladimir
Format:	Artikel
Sprache:	eng
Schlagworte:	complementary TFTs high mobility Integrated circuits nanosheet transistor Nanosheets SnO pTFT SnO2 nTFT three-dimensional integrated circuit Tin dioxide
Online-Zugang:	Volltext
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