37.1: Invited Paper: Nanosheet High Mobility SnO2‐SnO Complementary TFTs for System‐on‐Display and Monolithic Three‐Dimensional Integrated Circuit

37.1: Invited Paper: Nanosheet High Mobility SnO2‐SnO Complementary TFTs for System‐on‐Display and Monolithic Three‐Dimensional Integrated Circuit

The top‐gate 4.5‐nm‐thick SnO2 nanosheet nTFT has the high 136 cm2/Vs field‐effect mobility (μFE), sharp 1.5×108 on‐current/off‐current (ION/IOFF), and fast turn‐on subthreshold slope (SS) of 108 mV/decade. The top‐gate 7‐nm‐thick nanosheet SnO pTFT has a high μFE of 4.4 cm2/Vs, large ION/IOFF of 1....

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Veröffentlicht in:SID International Symposium Digest of technical papers 2022-10, Vol.53 (S1), p.393-395
Hauptverfasser: Chin, Albert, Yen, Te Jui, Gritsenko, Vladimir
Format: Artikel
Sprache:eng
Schlagworte:
complementary TFTs
high mobility
Integrated circuits
nanosheet transistor
Nanosheets
SnO pTFT
SnO2 nTFT
three-dimensional integrated circuit
Tin dioxide
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creator Chin, Albert
Yen, Te Jui
Gritsenko, Vladimir
description The top‐gate 4.5‐nm‐thick SnO2 nanosheet nTFT has the high 136 cm2/Vs field‐effect mobility (μFE), sharp 1.5×108 on‐current/off‐current (ION/IOFF), and fast turn‐on subthreshold slope (SS) of 108 mV/decade. The top‐gate 7‐nm‐thick nanosheet SnO pTFT has a high μFE of 4.4 cm2/Vs, large ION/IOFF of 1.2×105, and SS of 526 mV/decade. These CTFTs will enable the system‐on‐panel (SoP) and Monolithic Three‐Dimensional (3D) Integrated Circuit (IC).
doi_str_mv 10.1002/sdtp.15959
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subjects complementary TFTs
high mobility
Integrated circuits
nanosheet transistor
Nanosheets
SnO pTFT
SnO2 nTFT
three-dimensional integrated circuit
Tin dioxide
title 37.1: Invited Paper: Nanosheet High Mobility SnO2‐SnO Complementary TFTs for System‐on‐Display and Monolithic Three‐Dimensional Integrated Circuit
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