P‐1.8: A New n+‐Formation Process by NH3 Plasma Treatment for Top Gate Coplanar IGZO Thin‐film Transistors

In coplanar structure thin‐film transistor (TFT), the formation of source/drain region with doping process is important to get high mobility. In this paper, the effects of NH3 plasma treatment to form n+ region have been investigated. The results show that the top gate coplanar structure Amorphous i...

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Veröffentlicht in:	SID International Symposium Digest of technical papers 2022-10, Vol.53 (S1), p.594-595
Hauptverfasser:	Chen, Chuanke, Duan, Xinlv, Chen, Qian, ji, Hansai, Huang, Shijie, Chuai, Xichen, Wu, Wanming, Geng, Di
Format:	Artikel
Sprache:	eng
Schlagworte:	a-IGZO TFT Ammonia Contact resistance Coplanar structure Gallium High mobility Indium gallium zinc oxide NH3 plasma treatment Semiconductor devices Thin film transistors
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