A Threshold Voltage Model for AOS TFTs Considering a Wide Range of Tail-State Density and Degeneration

There have been significant differences in principle electrical parameters between amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) and silicon-based devices for their distinct conduction mechanisms. Additionally, threshold voltage is one of the key parameters in device characterizat...

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Veröffentlicht in:Electronics (Basel) 2022-10, Vol.11 (19), p.3137
Hauptverfasser: Cai, Minxi, Xu, Piaorong, Liu, Bei, Peng, Ziqi, Cai, Jianhua, Cao, Jing
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Sprache:eng
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