Schottky Electric Field Induced Circular Photogalvanic Effect in Cd3As2 Nanobelts

Dirac semimetals are expected to forbid the manifestation of the circular photogalvanic effect (CPGE) because of their crystal inversion symmetry. Here, we report the observation of the CPGE in Cd3As2 nanobelt field effect transistors, when the photoexcitation is focused in the vicinity of the metal...

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Veröffentlicht in:	arXiv.org 2022-10
Hauptverfasser:	Wang, Bob Minyu, Zhu, Yuqing, Henry Clark Travaglini, Savrasov, Sergey Y, Yu, Dong
Format:	Artikel
Sprache:	eng
Schlagworte:	Broken symmetry Circular polarization Electric contacts Electric fields Field effect transistors First principles Helicity Metalloids Optoelectronics Phase transitions Photoelectric effect Photoelectric emission Photoexcitation Room temperature Semiconductor devices
Online-Zugang:	Volltext
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