Theoretical design and electronic properties study of two-dimensional Si2S
The zero band gap and air instability seriously of silicene limit its application in logic devices. By introducing the group VI elements, the band gap and stability of silicene will be adjusted. In this research, we propose a new two-dimensional material, Si2S. Si2S has excellent dynamic stability a...
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| Veröffentlicht in: | Journal of physics. Conference series 2022-09, Vol.2343 (1), p.012027 |
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| creator | Jiang, Tao Liu, Chun-Sheng |
| description | The zero band gap and air instability seriously of silicene limit its application in logic devices. By introducing the group VI elements, the band gap and stability of silicene will be adjusted. In this research, we propose a new two-dimensional material, Si2S. Si2S has excellent dynamic stability and thermal stability. AIMD simulations show that Si2S can maintain structural integrity at a temperature of 600 K. Si2S has an indirect band gap of 1.93 eV. The indirect band gap can be transformed into a direct band gap under the uniaxial strain along x direction or biaxial strain. The calculated carrier mobility of Si2S is anisotropic and the highest carrier mobility of Si2S is 182.72 cm2 V−1 S−1. The band gap and carrier mobility of Si2S are comparable with that of monolayer MoS2, which makes it promising to be used in the field of nanoelectronics. |
| doi_str_mv | 10.1088/1742-6596/2343/1/012027 |
| format | Article |
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By introducing the group VI elements, the band gap and stability of silicene will be adjusted. In this research, we propose a new two-dimensional material, Si2S. Si2S has excellent dynamic stability and thermal stability. AIMD simulations show that Si2S can maintain structural integrity at a temperature of 600 K. Si2S has an indirect band gap of 1.93 eV. The indirect band gap can be transformed into a direct band gap under the uniaxial strain along x direction or biaxial strain. The calculated carrier mobility of Si2S is anisotropic and the highest carrier mobility of Si2S is 182.72 cm2 V−1 S−1. 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The band gap and carrier mobility of Si2S are comparable with that of monolayer MoS2, which makes it promising to be used in the field of nanoelectronics.</description><subject>Carrier mobility</subject><subject>Dynamic stability</subject><subject>Energy gap</subject><subject>Nanoelectronics</subject><subject>Physics</subject><subject>Silicene</subject><subject>Structural integrity</subject><subject>Thermal simulation</subject><subject>Thermal stability</subject><subject>Two dimensional materials</subject><issn>1742-6588</issn><issn>1742-6596</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>O3W</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNptkG9LwzAQh4MoOKefwYDvhNr8T_pShk7HQGHzdWiaq2bMpjYd4re3ZTIRvDd3cM8dPx6ELim5ocSYnGrBMiULlTMueE5zQhlh-ghNDpvjw2zMKTpLaUMIH0pP0GL9BrGDPlTlFntI4bXBZeMxbKHqu9iECrddbKHrAySc-p3_wrHG_WfMfHiHJoXYDJerwFbn6KQutwkufvoUvdzfrWcP2fJp_ji7XWaBMaUz7zyvCiqh8gUI5pRRtRQGHAHJa0-Nc1rQsvYlIVR4rrSTTgplBCXEgOJTdLX_OwT72EHq7SbuuiFFskwzLkWhCz5Q13sqxPYXWDzPVnb0ZKnde7KtrweY_wNTYkfDdnRnR49_L_k3FtVsqw</recordid><startdate>20220901</startdate><enddate>20220901</enddate><creator>Jiang, Tao</creator><creator>Liu, Chun-Sheng</creator><general>IOP Publishing</general><scope>O3W</scope><scope>TSCCA</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>H8D</scope><scope>HCIFZ</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope></search><sort><creationdate>20220901</creationdate><title>Theoretical design and electronic properties study of two-dimensional Si2S</title><author>Jiang, Tao ; Liu, Chun-Sheng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i2267-dbd3c915ecd9e42b686f548eb0e53fd18bb741afda0014d367b5b546841008e63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Carrier mobility</topic><topic>Dynamic stability</topic><topic>Energy gap</topic><topic>Nanoelectronics</topic><topic>Physics</topic><topic>Silicene</topic><topic>Structural integrity</topic><topic>Thermal simulation</topic><topic>Thermal stability</topic><topic>Two dimensional materials</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jiang, Tao</creatorcontrib><creatorcontrib>Liu, Chun-Sheng</creatorcontrib><collection>IOP Publishing Free Content</collection><collection>IOPscience (Open Access)</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>Aerospace Database</collection><collection>SciTech Premium Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><jtitle>Journal of physics. 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| subjects | Carrier mobility Dynamic stability Energy gap Nanoelectronics Physics Silicene Structural integrity Thermal simulation Thermal stability Two dimensional materials |
| title | Theoretical design and electronic properties study of two-dimensional Si2S |
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