Effect of La2O3 doping on microstructure and electrical properties of flash-sintered ZnO-Bi2O3 varistor

The crystal phase combination, relative density, microstructure, varistor properties and dielectric properties of La 2 O 3 -doped ZnO-Bi 2 O 3 -based varistor at a furnace temperature of 950 °C were investigated under the electric field of 300 V/cm within 35 s. Obtained samples were fully densified...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of materials science. Materials in electronics 2022-10, Vol.33 (30), p.23437-23446
Hauptverfasser:	Shi, Mengyang, Zhang, Lei, Cheng, Zhan, Wang, Zhentao, He, Qun, Qin, Jian, Jiu, Yongtao, Tang, Bin, Xu, Dong
Format:	Artikel
Sprache:	eng
Schlagworte:	Bismuth oxides Bismuth trioxide Ceramics Characterization and Evaluation of Materials Chemistry and Materials Science Density Dielectric loss Dielectric properties Doping Electric fields Electrical properties Grain boundaries Lanthanum oxides Leakage current Materials Science Microstructure Optical and Electronic Materials Polyvinyl alcohol Resistance sintering Sintering Specific gravity Zinc oxide Zinc oxides
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!