Study on the electronic and structural properties of oxidized copper films
A detailed study of the oxidation of Cu substrates was carried out under controlled conditions by regulating the pressure, atmosphere composition, process time, and temperature. By tuning the synthesis conditions, the formation of cuprous oxide (Cu2O) or cupric oxide (CuO) could be preferentially pr...
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| Veröffentlicht in: | AIP advances 2022-10, Vol.12 (10), p.105203-105203-8 |
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| creator | Rafei, Mouna Miranda La Hera, Vladimir Reza-Barzegar, Hamid Gracia-Espino, Eduardo Wågberg, Thomas |
| description | A detailed study of the oxidation of Cu substrates was carried out under controlled conditions by regulating the pressure, atmosphere composition, process time, and temperature. By tuning the synthesis conditions, the formation of cuprous oxide (Cu2O) or cupric oxide (CuO) could be preferentially promoted. The oxidation temperature was varied from 400 to 1050 °C, and a gradual oxidation of metallic Cu to Cu2O was achieved at mild oxidation conditions (400–600 °C), while the formation of CuO was only observed at higher temperatures (≥900 °C). The surface morphology was also affected changing from a highly granular texture (400 °C) with grain sizes between 0.59 ± 0.15 µm to smooth large crystallites (≥900 °C) with a size within 2.76 ± 0.97 µm. We also show that by controlling the oxidation temperature (400–1050 °C), it is possible to tune the work function and the ionization potential of the resulting Cu2O/CuO film, properties that are important for various optoelectronic applications. |
| doi_str_mv | 10.1063/5.0105281 |
| format | Article |
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By tuning the synthesis conditions, the formation of cuprous oxide (Cu2O) or cupric oxide (CuO) could be preferentially promoted. The oxidation temperature was varied from 400 to 1050 °C, and a gradual oxidation of metallic Cu to Cu2O was achieved at mild oxidation conditions (400–600 °C), while the formation of CuO was only observed at higher temperatures (≥900 °C). The surface morphology was also affected changing from a highly granular texture (400 °C) with grain sizes between 0.59 ± 0.15 µm to smooth large crystallites (≥900 °C) with a size within 2.76 ± 0.97 µm. We also show that by controlling the oxidation temperature (400–1050 °C), it is possible to tune the work function and the ionization potential of the resulting Cu2O/CuO film, properties that are important for various optoelectronic applications.</description><identifier>ISSN: 2158-3226</identifier><identifier>EISSN: 2158-3226</identifier><identifier>DOI: 10.1063/5.0105281</identifier><identifier>CODEN: AAIDBI</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Copper ; Copper oxides ; Crystallites ; Grain size ; Ionization potentials ; Metal films ; Optoelectronics ; Oxidation ; Substrates ; Work functions</subject><ispartof>AIP advances, 2022-10, Vol.12 (10), p.105203-105203-8</ispartof><rights>Author(s)</rights><rights>2022 Author(s). 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We also show that by controlling the oxidation temperature (400–1050 °C), it is possible to tune the work function and the ionization potential of the resulting Cu2O/CuO film, properties that are important for various optoelectronic applications.</description><subject>Copper</subject><subject>Copper oxides</subject><subject>Crystallites</subject><subject>Grain size</subject><subject>Ionization potentials</subject><subject>Metal films</subject><subject>Optoelectronics</subject><subject>Oxidation</subject><subject>Substrates</subject><subject>Work functions</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>D8T</sourceid><sourceid>DOA</sourceid><recordid>eNp9kVtrFTEQgBdRsLR98B8EfFLYdiabZLOPpdpaKfjg5TVkc9Ec9mzWJKttf71pz6EqgvMyw_DNxyTTNC8QThBEd8pPAIFTiU-aA4pcth2l4ukf9fPmOOcN1GADgmQHzfuPZbW3JM6kfHPETc6UFOdgiJ4tySWtpqxJT2RJcXGpBJdJ9CTeBBvunCUmLrVNfJi2-ah55vWU3fE-HzafL95-On_XXn-4vDo_u24NE6K0HLHjrHN0ABhBoxut4T3HkVI0XHjPLAfopGGDG_XYU42WUrCsTqAE2R02VzuvjXqjlhS2Ot2qqIN6aMT0Vem6qZmcGgWABmSMcscA7SC4lzgIwbQ0AL662p0r_3TLOv5lexO-nD3Y1u2qKHSU08q_3PH1P76vLhe1iWua63MV7SnKvqfinnq1o0yKOSfnH70I6v5Siqv9pSr7er-BCUWXEOdH-EdMv0G1WP8_-F_zL-C4nw8</recordid><startdate>20221001</startdate><enddate>20221001</enddate><creator>Rafei, Mouna</creator><creator>Miranda La Hera, Vladimir</creator><creator>Reza-Barzegar, Hamid</creator><creator>Gracia-Espino, Eduardo</creator><creator>Wågberg, Thomas</creator><general>American Institute of Physics</general><general>AIP Publishing LLC</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>ADHXS</scope><scope>ADTPV</scope><scope>AOWAS</scope><scope>D8T</scope><scope>D93</scope><scope>ZZAVC</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0001-9239-0541</orcidid><orcidid>https://orcid.org/0000-0002-5080-8273</orcidid></search><sort><creationdate>20221001</creationdate><title>Study on the electronic and structural properties of oxidized copper films</title><author>Rafei, Mouna ; Miranda La Hera, Vladimir ; Reza-Barzegar, Hamid ; Gracia-Espino, Eduardo ; Wågberg, Thomas</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c466t-5113543e2900b0a1ebdc5751b221c56ff4d50038c49ebab72a1d220d4e2918083</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Copper</topic><topic>Copper oxides</topic><topic>Crystallites</topic><topic>Grain size</topic><topic>Ionization potentials</topic><topic>Metal films</topic><topic>Optoelectronics</topic><topic>Oxidation</topic><topic>Substrates</topic><topic>Work functions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rafei, Mouna</creatorcontrib><creatorcontrib>Miranda La Hera, Vladimir</creatorcontrib><creatorcontrib>Reza-Barzegar, Hamid</creatorcontrib><creatorcontrib>Gracia-Espino, Eduardo</creatorcontrib><creatorcontrib>Wågberg, Thomas</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>SWEPUB Umeå universitet full text</collection><collection>SwePub</collection><collection>SwePub Articles</collection><collection>SWEPUB Freely available online</collection><collection>SWEPUB Umeå universitet</collection><collection>SwePub Articles full text</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>AIP advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Rafei, Mouna</au><au>Miranda La Hera, Vladimir</au><au>Reza-Barzegar, Hamid</au><au>Gracia-Espino, Eduardo</au><au>Wågberg, Thomas</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study on the electronic and structural properties of oxidized copper films</atitle><jtitle>AIP advances</jtitle><date>2022-10-01</date><risdate>2022</risdate><volume>12</volume><issue>10</issue><spage>105203</spage><epage>105203-8</epage><pages>105203-105203-8</pages><issn>2158-3226</issn><eissn>2158-3226</eissn><coden>AAIDBI</coden><abstract>A detailed study of the oxidation of Cu substrates was carried out under controlled conditions by regulating the pressure, atmosphere composition, process time, and temperature. By tuning the synthesis conditions, the formation of cuprous oxide (Cu2O) or cupric oxide (CuO) could be preferentially promoted. The oxidation temperature was varied from 400 to 1050 °C, and a gradual oxidation of metallic Cu to Cu2O was achieved at mild oxidation conditions (400–600 °C), while the formation of CuO was only observed at higher temperatures (≥900 °C). The surface morphology was also affected changing from a highly granular texture (400 °C) with grain sizes between 0.59 ± 0.15 µm to smooth large crystallites (≥900 °C) with a size within 2.76 ± 0.97 µm. We also show that by controlling the oxidation temperature (400–1050 °C), it is possible to tune the work function and the ionization potential of the resulting Cu2O/CuO film, properties that are important for various optoelectronic applications.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0105281</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0001-9239-0541</orcidid><orcidid>https://orcid.org/0000-0002-5080-8273</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Copper Copper oxides Crystallites Grain size Ionization potentials Metal films Optoelectronics Oxidation Substrates Work functions |
| title | Study on the electronic and structural properties of oxidized copper films |
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