Electronic Characteristics of Ultra‐Thin Passivation Layers for Silicon Photovoltaics

Surface passivating thin films are crucial for limiting the electrical losses during charge carrier collection in silicon photovoltaic devices. Certain dielectric coatings of more than 10 nm provide excellent surface passivation, and ultra‐thin (

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Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials interfaces 2022-10, Vol.9 (28), p.n/a
Hauptverfasser:	Pain, Sophie L., Khorani, Edris, Niewelt, Tim, Wratten, Ailish, Paez Fajardo, Galo J., Winfield, Ben P., Bonilla, Ruy S., Walker, Marc, Piper, Louis F. J., Grant, Nicholas E., Murphy, John D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Annealing Atomic layer deposition Atomic layer epitaxy Current carriers dielectrics Electric contacts Hafnium oxide Interlayers passivation Passivity Photovoltaic cells silicon Silicon dioxide Solar cells Temperature dependence Thickness Thin films
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Beschreibung
Zusammenfassung:	Surface passivating thin films are crucial for limiting the electrical losses during charge carrier collection in silicon photovoltaic devices. Certain dielectric coatings of more than 10 nm provide excellent surface passivation, and ultra‐thin (
ISSN:	2196-7350 2196-7350
DOI:	10.1002/admi.202201339