Dependence of the radiative lifetime on the type-II band offset in GaAsxSb1−x/GaAs quantum dots including effects of photoexcited carriers

In quantum dot (QD) heterostructures that have a type-II band alignment, either the electron or the hole is confined inside the QD. Due to smaller electron–hole overlap in such structures, relatively long radiative lifetimes can be realized, which is beneficial for devices such as intermediate-band...

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Veröffentlicht in:	Journal of applied physics 2022-10, Vol.132 (13)
Hauptverfasser:	Oteki, Yusuke, Shoji, Yasushi, Miyashita, Naoya, Okada, Yoshitaka
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Carrier lifetime Conduction bands Electrons Energy levels Epitaxial growth Gallium arsenide Heterostructures Lifetime Molecular beam epitaxy Photoluminescence Photovoltaic cells Quantum dots Radiative lifetime Solar cells
Online-Zugang:	Volltext
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