Recent progress on the effects of impurities and defects on the properties of Ga2O3

Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to prepare the ideal Ga2O3 since there are plenty of defects (e.g., vacancies and interstitial atoms) in the bulk a...

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Veröffentlicht in:	Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2022-09, Vol.10 (37), p.13395-13436
Hauptverfasser:	Wang, Yifei, Su, Jie, Lin, Zhenhua, Zhang, Jincheng, Chang, Jingjing, Yue Hao
Format:	Artikel
Sprache:	eng
Schlagworte:	Defects Electronic devices Gallium oxides Impurities Magnetic properties Material properties Mechanical properties Optoelectronic devices Physical properties Piezoelectricity Thermodynamic properties Ultraviolet detectors
Online-Zugang:	Volltext
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