Capacitance-Dependent VTH Instability Under a High dVg/dt Event in p-GaN Power HEMTs

In this work, we report that the VTH stability in p-GaN power HEMTs under a high dVg/dt event is highly correlated with the capacitance for the first time. The different dVg/dt event is performed by using fast sweep characterization with sweeping time (tsweep) varied from 10ms to 25~\mu \text{s} ....

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Veröffentlicht in:	IEEE electron device letters 2022-10, Vol.43 (10), p.1617-1620
Hauptverfasser:	Tang, Shun-Wei, Lin, Wei-Syuan, Huang, Zhen-Hong, Wu, Tian-Li
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitance Current measurement dVg/dt Gallium nitrides HEMTs High electron mobility transistors Logic gates MODFETs Optimization p-GaN power HEMTs Semiconductor device measurement Stability Threshold voltage stability Wide band gap semiconductors
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