Two-dimensional materials enabled next-generation low-energy compute and connectivity
Since the invention of the metal–oxide–semiconductor field-effect transistor (MOSFET) in late 1959, the impact of electronics on human society has been increasingly pervasive, heavily regulating modern health, transport, finance, entertainment, and social media sectors through “Big Data.” However, d...
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Veröffentlicht in: | MRS bulletin 2021-12, Vol.46 (12), p.1211-1228 |
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creator | Pal, Arnab Agashiwala, Kunjesh Jiang, Junkai Zhang, Dujiao Chavan, Tanmay Kumar, Ankit Yeh, Chao-Hui Cao, Wei Banerjee, Kaustav |
description | Since the invention of the metal–oxide–semiconductor field-effect transistor (MOSFET) in late 1959, the impact of electronics on human society has been increasingly pervasive, heavily regulating modern health, transport, finance, entertainment, and social media sectors through “Big Data.” However, daily generation of petabytes of data from these sectors, along with their associated communication overhead, is placing an immense strain on the conventional computing and communication technologies, which were not developed exclusively for big data. Tackling these problems calls for a holistic overhaul of the current semiconductor technology, from materials to architecture, and two-dimensional (2D)-layered materials with their exotic electrical and structural properties are well positioned to accomplish just that. This perspective article aims to provide an overview of the key technological innovations in the nanoelectronics domain that have been achieved with 2D-materials thus far, and to bring forth the promise of this new materials family in developing brain-inspired ultra low-energy on-chip computing and communication techniques to usher a new era in electronics.
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doi_str_mv | 10.1557/s43577-022-00270-0 |
format | Article |
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Graphical abstract</description><subject>Applied and Technical Physics</subject><subject>Big Data</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Communication</subject><subject>Computation</subject><subject>Electronics</subject><subject>Energy Materials</subject><subject>Field effect transistors</subject><subject>Inventions</subject><subject>Layered materials</subject><subject>Materials Engineering</subject><subject>Materials Science</subject><subject>Metal oxide semiconductors</subject><subject>MOSFETs</subject><subject>Nanoelectronics</subject><subject>Nanotechnology</subject><subject>Review Article</subject><subject>Semiconductor devices</subject><subject>Two dimensional materials</subject><issn>0883-7694</issn><issn>1938-1425</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEURYMoWKt_wNWA62g-J-lSil8guKnr8CbJlCkzmZqk1v57U0dw5-rlhXsPvIPQNSW3VEp1lwSXSmHCGCaEKYLJCZrRBdeYCiZP0YxozbGqF-IcXaS0IYRKouQMva_2I3bd4EPqxgB9NUD2sYM-VT5A03tXBf-V8doHHyGXTNWPe3zc1ofKjsN2l30FwZV3CN7m7rPLh0t01haEv_qdc7R6fFgtn_Hr29PL8v4VW04XGQPUArTWrRdCMEZrxYFK1XJnGTRW1w5AKu0bTp0qn7LVjXNAiKUWWs3n6GbCbuP4sfMpm824i-WKZJiimjEpCnKO2JSycUwp-tZsYzdAPBhKzNGemeyZYs_82DOklPhUSiUc1j7-of9pfQMaZHSU</recordid><startdate>20211201</startdate><enddate>20211201</enddate><creator>Pal, Arnab</creator><creator>Agashiwala, Kunjesh</creator><creator>Jiang, Junkai</creator><creator>Zhang, Dujiao</creator><creator>Chavan, Tanmay</creator><creator>Kumar, Ankit</creator><creator>Yeh, Chao-Hui</creator><creator>Cao, Wei</creator><creator>Banerjee, Kaustav</creator><general>Springer International Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7TA</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><orcidid>https://orcid.org/0000-0001-5344-0921</orcidid></search><sort><creationdate>20211201</creationdate><title>Two-dimensional materials enabled next-generation low-energy compute and connectivity</title><author>Pal, Arnab ; Agashiwala, Kunjesh ; Jiang, Junkai ; Zhang, Dujiao ; Chavan, Tanmay ; Kumar, Ankit ; Yeh, Chao-Hui ; Cao, Wei ; Banerjee, Kaustav</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-aa64a888fe444221673a157f3dc2abc86daa578eb31d73dc5f8bdda00c1caf83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Applied and Technical Physics</topic><topic>Big Data</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Communication</topic><topic>Computation</topic><topic>Electronics</topic><topic>Energy Materials</topic><topic>Field effect transistors</topic><topic>Inventions</topic><topic>Layered materials</topic><topic>Materials Engineering</topic><topic>Materials Science</topic><topic>Metal oxide semiconductors</topic><topic>MOSFETs</topic><topic>Nanoelectronics</topic><topic>Nanotechnology</topic><topic>Review Article</topic><topic>Semiconductor devices</topic><topic>Two dimensional materials</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pal, Arnab</creatorcontrib><creatorcontrib>Agashiwala, Kunjesh</creatorcontrib><creatorcontrib>Jiang, Junkai</creatorcontrib><creatorcontrib>Zhang, Dujiao</creatorcontrib><creatorcontrib>Chavan, Tanmay</creatorcontrib><creatorcontrib>Kumar, Ankit</creatorcontrib><creatorcontrib>Yeh, Chao-Hui</creatorcontrib><creatorcontrib>Cao, Wei</creatorcontrib><creatorcontrib>Banerjee, Kaustav</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Materials Business File</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>MRS bulletin</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Pal, Arnab</au><au>Agashiwala, Kunjesh</au><au>Jiang, Junkai</au><au>Zhang, Dujiao</au><au>Chavan, Tanmay</au><au>Kumar, Ankit</au><au>Yeh, Chao-Hui</au><au>Cao, Wei</au><au>Banerjee, Kaustav</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Two-dimensional materials enabled next-generation low-energy compute and connectivity</atitle><jtitle>MRS bulletin</jtitle><stitle>MRS Bulletin</stitle><date>2021-12-01</date><risdate>2021</risdate><volume>46</volume><issue>12</issue><spage>1211</spage><epage>1228</epage><pages>1211-1228</pages><issn>0883-7694</issn><eissn>1938-1425</eissn><abstract>Since the invention of the metal–oxide–semiconductor field-effect transistor (MOSFET) in late 1959, the impact of electronics on human society has been increasingly pervasive, heavily regulating modern health, transport, finance, entertainment, and social media sectors through “Big Data.” However, daily generation of petabytes of data from these sectors, along with their associated communication overhead, is placing an immense strain on the conventional computing and communication technologies, which were not developed exclusively for big data. Tackling these problems calls for a holistic overhaul of the current semiconductor technology, from materials to architecture, and two-dimensional (2D)-layered materials with their exotic electrical and structural properties are well positioned to accomplish just that. This perspective article aims to provide an overview of the key technological innovations in the nanoelectronics domain that have been achieved with 2D-materials thus far, and to bring forth the promise of this new materials family in developing brain-inspired ultra low-energy on-chip computing and communication techniques to usher a new era in electronics.
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subjects | Applied and Technical Physics Big Data Characterization and Evaluation of Materials Chemistry and Materials Science Communication Computation Electronics Energy Materials Field effect transistors Inventions Layered materials Materials Engineering Materials Science Metal oxide semiconductors MOSFETs Nanoelectronics Nanotechnology Review Article Semiconductor devices Two dimensional materials |
title | Two-dimensional materials enabled next-generation low-energy compute and connectivity |
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