Growth mechanism of silver dendrites on porous silicon by single-step electrochemical synthesis method

Silver micro/nanostructures are often used to enhance surface-enhanced Raman scattering (SERS) due their hotspot effect. In this paper, a single-step electrochemical etching method was used to prepare silver dendrites with stems, branches and leaf morphology on porous silicon. A detailed analysis of...

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Veröffentlicht in:Applied physics. A, Materials science & processing Materials science & processing, 2022-10, Vol.128 (10), Article 908
Hauptverfasser: Ge, Daohan, Yao, Jun, Ding, Jie, Babangida, Abubakar A., Zhu, Chenxi, Ni, Chao, Zhao, Chengxiang, Qian, Pengfei, Zhang, Liqiang
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container_title Applied physics. A, Materials science & processing
container_volume 128
creator Ge, Daohan
Yao, Jun
Ding, Jie
Babangida, Abubakar A.
Zhu, Chenxi
Ni, Chao
Zhao, Chengxiang
Qian, Pengfei
Zhang, Liqiang
description Silver micro/nanostructures are often used to enhance surface-enhanced Raman scattering (SERS) due their hotspot effect. In this paper, a single-step electrochemical etching method was used to prepare silver dendrites with stems, branches and leaf morphology on porous silicon. A detailed analysis of the evolution and growth mechanism of the silver dendrites on the porous silicon was conducted, based on diffusion-limited aggregation, the anisotropy associated with the solid–liquid interface energy, and taking into account different growth rates. The SERS efficiency of the analyte molecule Rhodamine 6G was evaluated, achieving a low detection limit of up to 10 –11  M concentration. The linear relationship between Rhodamine 6G concentration and Raman peak intensity is good within the concentration range of 10 –4 –10 –11  M, and the linear fitting equation is y  = − 4479.4 x + 41,952.9 ( R 2  = 0.9815). Therefore, the results indicate that different silver dendrites can be prepared by controlling the time, which is beneficial for the design of silver dendrite-based composites with high SERS performance.
doi_str_mv 10.1007/s00339-022-06054-2
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2716979246</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2716979246</sourcerecordid><originalsourceid>FETCH-LOGICAL-c319t-55bf88181e0fc4c588b9ba4a3dfdea12c329062ffd5f64845cefd7baf9a1dbd73</originalsourceid><addsrcrecordid>eNp9kE1LAzEQhoMoWD_-gKeA52i-9iNHKVqFghc9h2wy6W7Z3azJVum_N7WCN-cyM8z7vgMPQjeM3jFKq_tEqRCKUM4JLWkhCT9BCybFYRX0FC2okhWphSrP0UVKW5pLcr5AfhXD19ziAWxrxi4NOHicuv4TInYwutjNkHAY8RRi2KXDqbN5bfZ5HDc9kDTDhKEHO8dgWxg6a3qc9uPcQupSDp7b4K7QmTd9guvffonenx7fls9k_bp6WT6siRVMzaQoGl_XrGZAvZW2qOtGNUYa4bwDw7gVXNGSe-8KX8paFha8qxrjlWGucZW4RLfH3CmGjx2kWW_DLo75peYVK1WluCyzih9VNoaUIng9xW4wca8Z1Qee-shTZ576h6fm2SSOppTF4wbiX_Q_rm__jntu</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2716979246</pqid></control><display><type>article</type><title>Growth mechanism of silver dendrites on porous silicon by single-step electrochemical synthesis method</title><source>Springer Nature - Complete Springer Journals</source><creator>Ge, Daohan ; Yao, Jun ; Ding, Jie ; Babangida, Abubakar A. ; Zhu, Chenxi ; Ni, Chao ; Zhao, Chengxiang ; Qian, Pengfei ; Zhang, Liqiang</creator><creatorcontrib>Ge, Daohan ; Yao, Jun ; Ding, Jie ; Babangida, Abubakar A. ; Zhu, Chenxi ; Ni, Chao ; Zhao, Chengxiang ; Qian, Pengfei ; Zhang, Liqiang</creatorcontrib><description>Silver micro/nanostructures are often used to enhance surface-enhanced Raman scattering (SERS) due their hotspot effect. In this paper, a single-step electrochemical etching method was used to prepare silver dendrites with stems, branches and leaf morphology on porous silicon. A detailed analysis of the evolution and growth mechanism of the silver dendrites on the porous silicon was conducted, based on diffusion-limited aggregation, the anisotropy associated with the solid–liquid interface energy, and taking into account different growth rates. The SERS efficiency of the analyte molecule Rhodamine 6G was evaluated, achieving a low detection limit of up to 10 –11  M concentration. The linear relationship between Rhodamine 6G concentration and Raman peak intensity is good within the concentration range of 10 –4 –10 –11  M, and the linear fitting equation is y  = − 4479.4 x + 41,952.9 ( R 2  = 0.9815). Therefore, the results indicate that different silver dendrites can be prepared by controlling the time, which is beneficial for the design of silver dendrite-based composites with high SERS performance.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-022-06054-2</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Anisotropy ; Applied physics ; Characterization and Evaluation of Materials ; Chemical synthesis ; Condensed Matter Physics ; Dendritic structure ; Electrochemical etching ; Liquid-solid interfaces ; Machines ; Manufacturing ; Materials science ; Nanotechnology ; Optical and Electronic Materials ; Physics ; Physics and Astronomy ; Porous silicon ; Processes ; Raman spectra ; Rhodamine 6G ; Surfaces and Interfaces ; Thin Films</subject><ispartof>Applied physics. A, Materials science &amp; processing, 2022-10, Vol.128 (10), Article 908</ispartof><rights>The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-55bf88181e0fc4c588b9ba4a3dfdea12c329062ffd5f64845cefd7baf9a1dbd73</citedby><cites>FETCH-LOGICAL-c319t-55bf88181e0fc4c588b9ba4a3dfdea12c329062ffd5f64845cefd7baf9a1dbd73</cites><orcidid>0000-0002-5722-8298</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s00339-022-06054-2$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s00339-022-06054-2$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27903,27904,41467,42536,51298</link.rule.ids></links><search><creatorcontrib>Ge, Daohan</creatorcontrib><creatorcontrib>Yao, Jun</creatorcontrib><creatorcontrib>Ding, Jie</creatorcontrib><creatorcontrib>Babangida, Abubakar A.</creatorcontrib><creatorcontrib>Zhu, Chenxi</creatorcontrib><creatorcontrib>Ni, Chao</creatorcontrib><creatorcontrib>Zhao, Chengxiang</creatorcontrib><creatorcontrib>Qian, Pengfei</creatorcontrib><creatorcontrib>Zhang, Liqiang</creatorcontrib><title>Growth mechanism of silver dendrites on porous silicon by single-step electrochemical synthesis method</title><title>Applied physics. A, Materials science &amp; processing</title><addtitle>Appl. Phys. A</addtitle><description>Silver micro/nanostructures are often used to enhance surface-enhanced Raman scattering (SERS) due their hotspot effect. In this paper, a single-step electrochemical etching method was used to prepare silver dendrites with stems, branches and leaf morphology on porous silicon. A detailed analysis of the evolution and growth mechanism of the silver dendrites on the porous silicon was conducted, based on diffusion-limited aggregation, the anisotropy associated with the solid–liquid interface energy, and taking into account different growth rates. The SERS efficiency of the analyte molecule Rhodamine 6G was evaluated, achieving a low detection limit of up to 10 –11  M concentration. The linear relationship between Rhodamine 6G concentration and Raman peak intensity is good within the concentration range of 10 –4 –10 –11  M, and the linear fitting equation is y  = − 4479.4 x + 41,952.9 ( R 2  = 0.9815). Therefore, the results indicate that different silver dendrites can be prepared by controlling the time, which is beneficial for the design of silver dendrite-based composites with high SERS performance.</description><subject>Anisotropy</subject><subject>Applied physics</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemical synthesis</subject><subject>Condensed Matter Physics</subject><subject>Dendritic structure</subject><subject>Electrochemical etching</subject><subject>Liquid-solid interfaces</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Materials science</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Porous silicon</subject><subject>Processes</subject><subject>Raman spectra</subject><subject>Rhodamine 6G</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWD_-gKeA52i-9iNHKVqFghc9h2wy6W7Z3azJVum_N7WCN-cyM8z7vgMPQjeM3jFKq_tEqRCKUM4JLWkhCT9BCybFYRX0FC2okhWphSrP0UVKW5pLcr5AfhXD19ziAWxrxi4NOHicuv4TInYwutjNkHAY8RRi2KXDqbN5bfZ5HDc9kDTDhKEHO8dgWxg6a3qc9uPcQupSDp7b4K7QmTd9guvffonenx7fls9k_bp6WT6siRVMzaQoGl_XrGZAvZW2qOtGNUYa4bwDw7gVXNGSe-8KX8paFha8qxrjlWGucZW4RLfH3CmGjx2kWW_DLo75peYVK1WluCyzih9VNoaUIng9xW4wca8Z1Qee-shTZ576h6fm2SSOppTF4wbiX_Q_rm__jntu</recordid><startdate>20221001</startdate><enddate>20221001</enddate><creator>Ge, Daohan</creator><creator>Yao, Jun</creator><creator>Ding, Jie</creator><creator>Babangida, Abubakar A.</creator><creator>Zhu, Chenxi</creator><creator>Ni, Chao</creator><creator>Zhao, Chengxiang</creator><creator>Qian, Pengfei</creator><creator>Zhang, Liqiang</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-5722-8298</orcidid></search><sort><creationdate>20221001</creationdate><title>Growth mechanism of silver dendrites on porous silicon by single-step electrochemical synthesis method</title><author>Ge, Daohan ; Yao, Jun ; Ding, Jie ; Babangida, Abubakar A. ; Zhu, Chenxi ; Ni, Chao ; Zhao, Chengxiang ; Qian, Pengfei ; Zhang, Liqiang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-55bf88181e0fc4c588b9ba4a3dfdea12c329062ffd5f64845cefd7baf9a1dbd73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Anisotropy</topic><topic>Applied physics</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemical synthesis</topic><topic>Condensed Matter Physics</topic><topic>Dendritic structure</topic><topic>Electrochemical etching</topic><topic>Liquid-solid interfaces</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Materials science</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Porous silicon</topic><topic>Processes</topic><topic>Raman spectra</topic><topic>Rhodamine 6G</topic><topic>Surfaces and Interfaces</topic><topic>Thin Films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ge, Daohan</creatorcontrib><creatorcontrib>Yao, Jun</creatorcontrib><creatorcontrib>Ding, Jie</creatorcontrib><creatorcontrib>Babangida, Abubakar A.</creatorcontrib><creatorcontrib>Zhu, Chenxi</creatorcontrib><creatorcontrib>Ni, Chao</creatorcontrib><creatorcontrib>Zhao, Chengxiang</creatorcontrib><creatorcontrib>Qian, Pengfei</creatorcontrib><creatorcontrib>Zhang, Liqiang</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics. A, Materials science &amp; processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ge, Daohan</au><au>Yao, Jun</au><au>Ding, Jie</au><au>Babangida, Abubakar A.</au><au>Zhu, Chenxi</au><au>Ni, Chao</au><au>Zhao, Chengxiang</au><au>Qian, Pengfei</au><au>Zhang, Liqiang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth mechanism of silver dendrites on porous silicon by single-step electrochemical synthesis method</atitle><jtitle>Applied physics. A, Materials science &amp; processing</jtitle><stitle>Appl. Phys. A</stitle><date>2022-10-01</date><risdate>2022</risdate><volume>128</volume><issue>10</issue><artnum>908</artnum><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>Silver micro/nanostructures are often used to enhance surface-enhanced Raman scattering (SERS) due their hotspot effect. In this paper, a single-step electrochemical etching method was used to prepare silver dendrites with stems, branches and leaf morphology on porous silicon. A detailed analysis of the evolution and growth mechanism of the silver dendrites on the porous silicon was conducted, based on diffusion-limited aggregation, the anisotropy associated with the solid–liquid interface energy, and taking into account different growth rates. The SERS efficiency of the analyte molecule Rhodamine 6G was evaluated, achieving a low detection limit of up to 10 –11  M concentration. The linear relationship between Rhodamine 6G concentration and Raman peak intensity is good within the concentration range of 10 –4 –10 –11  M, and the linear fitting equation is y  = − 4479.4 x + 41,952.9 ( R 2  = 0.9815). Therefore, the results indicate that different silver dendrites can be prepared by controlling the time, which is beneficial for the design of silver dendrite-based composites with high SERS performance.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-022-06054-2</doi><orcidid>https://orcid.org/0000-0002-5722-8298</orcidid></addata></record>
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subjects Anisotropy
Applied physics
Characterization and Evaluation of Materials
Chemical synthesis
Condensed Matter Physics
Dendritic structure
Electrochemical etching
Liquid-solid interfaces
Machines
Manufacturing
Materials science
Nanotechnology
Optical and Electronic Materials
Physics
Physics and Astronomy
Porous silicon
Processes
Raman spectra
Rhodamine 6G
Surfaces and Interfaces
Thin Films
title Growth mechanism of silver dendrites on porous silicon by single-step electrochemical synthesis method
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T12%3A28%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Growth%20mechanism%20of%20silver%20dendrites%20on%20porous%20silicon%20by%20single-step%20electrochemical%20synthesis%20method&rft.jtitle=Applied%20physics.%20A,%20Materials%20science%20&%20processing&rft.au=Ge,%20Daohan&rft.date=2022-10-01&rft.volume=128&rft.issue=10&rft.artnum=908&rft.issn=0947-8396&rft.eissn=1432-0630&rft_id=info:doi/10.1007/s00339-022-06054-2&rft_dat=%3Cproquest_cross%3E2716979246%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2716979246&rft_id=info:pmid/&rfr_iscdi=true